Inventor · disambiguated record
Kenichi Miyajima
Also filed as: MIYAJIMA KENICHI
11 granted patents·8 pending applications·151 citations·filing 1998–2024
88Inventor score
Files withPANASONIC CORP7MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4NUVOTON TECHNOLOGY CORP JAPAN3SHINETSU POLYMER CO3FURUKAWA ELECTRIC CO LTD2
Top patents by PatentIndex Score
19 records- 0194US5881866APush button switch covering assembly including dome contactSHINETSU POLYMER CO·Filed 1998·Granted Mar 16, 1999·96 cites·5 claims
- 0291US10373775B2Pushbutton switch memberSHINETSU POLYMER CO·Filed 2016·Granted Aug 6, 2019·8 cites·19 claims
- 0389US7728357B2Heterojunction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2006·Granted Jun 1, 2010·19 cites·10 claims
- 0486US10403451B2Pushbutton switch memberSHINETSU POLYMER CO·Filed 2016·Granted Sep 3, 2019·5 cites·15 claims
- 0583US7989845B2Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2008·Granted Aug 2, 2011·9 cites·15 claims
- 0679US7001820B1Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Feb 21, 2006·9 cites·10 claims
- 0778US11876120B2Semiconductor device and method of manufacturing semiconductor deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2021·Granted Jan 16, 2024·1 cites·33 claims
- 0868US2024388065A1Optical semiconductor device, optical integrated device, and manufacturing method for optical semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 0968US2024380183A1Optical semiconductor device, optical integrated device, and manufacturing method for optical semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1061US8017975B2Semiconductor devicePANASONIC CORP·Filed 2009·Granted Sep 13, 2011·2 cites·4 claims
- 1160US7449729B2Heterojunction bipolar transistor and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Nov 11, 2008·2 cites·5 claims
- 1248US11257942B2Resistive element and power amplifier circuitNUVOTON TECHNOLOGY CORP JAPAN·Filed 2020·Granted Feb 22, 2022·0 cites·18 claims
- 1345US2010171151A1Heterojunction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2009·Application pending·0 cites
- 1444US12166103B2Semiconductor device for power amplificationNUVOTON TECHNOLOGY CORP JAPAN·Filed 2021·Granted Dec 10, 2024·0 cites·15 claims
- 1544US2011250726A1Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2011·Application pending·0 cites
- 1644US2008088020A1Semiconductor device and manufacturing method of the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 1742US2008176391A1Method for manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
- 1841US2006289896A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 1935US2010187571A1Semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →