Inventor · disambiguated record
Kenichi Ohtsuka
Also filed as: OHTSUKA KENICHI
43 granted patents·10 pending applications·182 citations·filing 1979–2023
97Inventor score
Files withMITSUBISHI ELECTRIC CORP12HAMAMATSU PHOTONICS KK11OHTSUKA KENICHI8CYPRESS SEMICONDUCTOR CORP4MIURA NARUHISA4
Top patents by PatentIndex Score
53 records- 0189US9006819B2Power semiconductor device and method for manufacturing sameHINO SHIRO·Filed 2011·Granted Apr 14, 2015·14 cites·18 claims
- 0287US8860039B2Semiconductor deviceMIURA NARUHISA·Filed 2011·Granted Oct 14, 2014·9 cites·19 claims
- 0387US8652907B2Integrating transistors with different poly-silicon heights on the same dieLIN CHUAN·Filed 2011·Granted Feb 18, 2014·9 cites·15 claims
- 0483US5020072ASemiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 28, 1991·32 cites·11 claims
- 0579US11988497B2Optical unit and film thickness measurement deviceHAMAMATSU PHOTONICS KK·Filed 2020·Granted May 21, 2024·1 cites·11 claims
- 0679US9831114B1Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 28, 2017·2 cites·18 claims
- 0779US8680538B2Silicon carbide semiconductor deviceTARUI YOICHIRO·Filed 2008·Granted Mar 25, 2014·8 cites·8 claims
- 0879US8598005B2Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devicesCHAN SIMON SIU-SING·Filed 2011·Granted Dec 3, 2013·6 cites·20 claims
- 0977US9846028B2Film thickness measurement method and film thickness measurement deviceHAMAMATSU PHOTONICS KK·Filed 2014·Granted Dec 19, 2017·3 cites·21 claims
- 1077US9437470B2Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 6, 2016·3 cites·14 claims
- 1177US8885173B2Film thickness measurement device and film thickness measurement methodOHTSUKA KENICHI·Filed 2010·Granted Nov 11, 2014·6 cites·10 claims
- 1277US8492836B2Power semiconductor deviceMIURA NARUHISA·Filed 2009·Granted Jul 23, 2013·7 cites·15 claims
- 1376US9105715B2Semiconductor device and method for manufacturing the sameMIURA NARUHISA·Filed 2009·Granted Aug 11, 2015·6 cites·10 claims
- 1476US5918564ASeat for watercraftYAMAHA MOTOR CO LTD·Filed 1997·Granted Jul 6, 1999·29 cites·29 claims
- 1575US8699023B2Reflectivity measuring device, reflectivity measuring method, membrane thickness measuring device, and membrane thickness measuring methodOHTSUKA KENICHI·Filed 2011·Granted Apr 15, 2014·3 cites·10 claims
- 1675US8569106B2Method for manufacturing silicon carbide semiconductor deviceHAMANO KENICHI·Filed 2010·Granted Oct 29, 2013·5 cites·8 claims
- 1773US8809206B2Patterned dummy wafers loading in batch type CVDSUGINO RINJI·Filed 2011·Granted Aug 19, 2014·3 cites·21 claims
- 1870US8304901B2Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layerWATANABE HIROSHI·Filed 2009·Granted Nov 6, 2012·4 cites·9 claims
- 1967US10062758B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 28, 2018·1 cites·24 claims
- 2067US9059193B2Epitaxial wafer and semiconductor elementOHTSUKA KENICHI·Filed 2010·Granted Jun 16, 2015·2 cites·4 claims
- 2167US8093598B2Power semiconductor deviceOHTSUKA KENICHI·Filed 2007·Granted Jan 10, 2012·2 cites·7 claims
- 2266US8350270B2Silicon carbide semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Jan 8, 2013·2 cites·5 claims
- 2365US8963276B2Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cellsWATANABE HIROSHI·Filed 2011·Granted Feb 24, 2015·2 cites·7 claims
- 2465US8916880B2Silicon carbide epitaxial wafer and semiconductor deviceOHTSUKA KENICHI·Filed 2011·Granted Dec 23, 2014·2 cites·6 claims
- 2565US7928469B2MOSFET and method for manufacturing MOSFETMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Apr 19, 2011·2 cites·14 claims
- 2663US9293572B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2010·Granted Mar 22, 2016·2 cites·16 claims
- 2763US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 2862US7939943B2Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layerMITSUBISHI ELECTRIC CORP·Filed 2008·Granted May 10, 2011·1 cites·6 claims
- 2961US2025216192A1Refractive index distribution measurement device, film thickness distribution measurement device, refractive index distribution measurement method, and film thickness distribution measurement methodHAMAMATSU PHOTONICS KK·Filed 2023·Application pending·0 cites
- 3060US2025244123A1Thickness-distribution measurement device and thickness-distribution measurement methoHAMAMATSU PHOTONICS KK·Filed 2023·Application pending·0 cites
- 3159US2025189453A1Spectroscopic device, raman spectroscopic measurement device, and spectroscopic methodHAMAMATSU PHOTONICS KK·Filed 2022·Application pending·0 cites
- 3257US10256137B2Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Apr 9, 2019·0 cites·3 claims
- 3357US9190468B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Nov 17, 2015·1 cites·9 claims
- 3456US4225809ASide pincushion correction circuitSONY CORP·Filed 1979·Granted Sep 30, 1980·11 cites·16 claims
- 3556US2025224273A1Optical detector and spectroscopic measurement deviceHAMAMATSU PHOTONICS KK·Filed 2022·Application pending·0 cites
- 3655US8649023B2Film thickness measurement device and measurement methodOHTSUKA KENICHI·Filed 2010·Granted Feb 11, 2014·1 cites·12 claims
- 3753US2025244172A1Spectrometry deviceHAMAMATSU PHOTONICS KK·Filed 2022·Application pending·0 cites
- 3852US9431503B2Integrating transistors with different poly-silicon heights on the same dieCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Aug 30, 2016·0 cites·10 claims
- 3951US11280604B2Film thickness measurement device, film thickness measurement method, film thickness measurement program, and recording medium for recording film thickness measurement programHAMAMATSU PHOTONICS KK·Filed 2018·Granted Mar 22, 2022·0 cites·17 claims
- 4051US7796661B2Semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Sep 14, 2010·0 cites·5 claims
- 4151US2024125589A1Film thickness measuring device and film thickness measuring methodHAMAMATSU PHOTONICS KK·Filed 2021·Application pending·0 cites
- 4250US2024240933A1Film thickness measurement device and film thickness measurement methodHAMAMATSU PHOTONICS KK·Filed 2022·Application pending·0 cites
- 4348US2012074508A1Power semiconductor deviceOHTSUKA KENICHI·Filed 2011·Application pending·0 cites
- 4447US9502553B2Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 22, 2016·0 cites·19 claims
- 4545US7678597B2Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contactMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·0 cites·7 claims
- 4644US2025341469A1Spectroscopic device, raman spectroscopic measurement device, and spectroscopic methodHAMAMATSU PHOTONICS KK·Filed 2022·Application pending·0 cites
- 4742US9153443B2Semiconductor device and method of fabricating sameOHTSUKA KENICHI·Filed 2012·Granted Oct 6, 2015·0 cites·16 claims
- 4842US8569123B2Method for manufacturing silicon carbide semiconductor deviceMATSUNO YOSHINORI·Filed 2009·Granted Oct 29, 2013·0 cites·8 claims
- 4942US8377811B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Feb 19, 2013·0 cites·15 claims
- 5042US7564072B2Semiconductor device having junction termination extensionMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Jul 21, 2009·1 cites·5 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →