Inventor · disambiguated record
Kent Rossman
Also filed as: ROSSMAN KENT
22 granted patents·3,012 citations·filing 1996–2006
97Inventor score
Files withAPPLIED MATERIALS INC22
Top patents by PatentIndex Score
22 records- 0199US6846742B2Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughputAPPLIED MATERIALS INC·Filed 2003·Granted Jan 25, 2005·486 cites·10 claims
- 0299US6589868B2Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughputAPPLIED MATERIALS INC·Filed 2001·Granted Jul 8, 2003·597 cites·14 claims
- 0399US6194038B1Method for deposition of a conformal layer on a substrateAPPLIED MATERIALS INC·Filed 1998·Granted Feb 27, 2001·358 cites·16 claims
- 0498US6843858B2Method of cleaning a semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2002·Granted Jan 18, 2005·317 cites·31 claims
- 0598US6559026B1Trench fill with HDP-CVD process including coupled high power density plasma depositionAPPLIED MATERIALS INC·Filed 2000·Granted May 6, 2003·623 cites·29 claims
- 0694US6704913B2In situ wafer heat for reduced backside contaminationAPPLIED MATERIALS INC·Filed 2002·Granted Mar 9, 2004·52 cites·17 claims
- 0794US6121161AReduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositionsAPPLIED MATERIALS INC·Filed 1999·Granted Sep 19, 2000·119 cites·8 claims
- 0890US6077357AOrientless wafer processing on an electrostatic chuckAPPLIED MATERIALS INC·Filed 1997·Granted Jun 20, 2000·105 cites·26 claims
- 0988US5748434AShield for an electrostatic chuckAPPLIED MATERIALS INC·Filed 1996·Granted May 5, 1998·91 cites·23 claims
- 1087US6527910B2Staggered in-situ deposition and etching of a dielectric layer for HDP-CVDAPPLIED MATERIALS INC·Filed 2000·Granted Mar 4, 2003·26 cites·5 claims
- 1186US5811356AReduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaningAPPLIED MATERIALS INC·Filed 1996·Granted Sep 22, 1998·48 cites·18 claims
- 1284US7455893B2Staggered in-situ deposition and etching of a dielectric layer for HDP-CVDAPPLIED MATERIALS INC·Filed 2006·Granted Nov 25, 2008·6 cites·10 claims
- 1383US6696362B2Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processesAPPLIED MATERIALS INC·Filed 2002·Granted Feb 24, 2004·32 cites·13 claims
- 1482US6458722B1Controlled method of silicon-rich oxide deposition using HDP-CVDAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·23 cites·21 claims
- 1579US6821577B2Staggered in-situ deposition and etching of a dielectric layer for HDP CVDAPPLIED MATERIALS INC·Filed 2002·Granted Nov 23, 2004·14 cites·51 claims
- 1679US6514870B2In situ wafer heat for reduced backside contaminationAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·15 cites·18 claims
- 1779US5976993AMethod for reducing the intrinsic stress of high density plasma filmsAPPLIED MATERIALS INC·Filed 1996·Granted Nov 2, 1999·53 cites·21 claims
- 1872US7132134B2Staggered in-situ deposition and etching of a dielectric layer for HDP CVDAPPLIED MATERIALS INC·Filed 2004·Granted Nov 7, 2006·9 cites·12 claims
- 1964US7159597B2Multistep remote plasma clean processAPPLIED MATERIALS INC·Filed 2002·Granted Jan 9, 2007·19 cites·23 claims
- 2063US6559052B2Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperaturesAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·10 cites·29 claims
- 2146US6524969B2High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafersAPPLIED MATERIALS INC·Filed 2001·Granted Feb 25, 2003·1 cites·23 claims
- 2241US7294205B1Method for reducing the intrinsic stress of high density plasma filmsAPPLIED MATERIALS INC·Filed 1999·Granted Nov 13, 2007·8 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →