Inventor · disambiguated record
Keisuke Tanizaki
Also filed as: TANIZAKI KEISUKE
13 granted patents·7 pending applications·67 citations·filing 2006–2019
89Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES15MIZUHARA NAHO2MIYANAGA MICHIMASA1SATOH ISSEI1TANIZAKI KEISUKE1
Top patents by PatentIndex Score
20 records- 0196US8404042B2Group-III nitride crystal compositeMIZUHARA NAHO·Filed 2012·Granted Mar 26, 2013·28 cites·20 claims
- 0291US8258051B2Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystalMIZUHARA NAHO·Filed 2009·Granted Sep 4, 2012·14 cites·8 claims
- 0387US7390695B2Diamond substrate and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jun 24, 2008·12 cites·44 claims
- 0482US8872309B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 28, 2014·3 cites·3 claims
- 0581US8709923B2Method of manufacturing III-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 29, 2014·3 cites·6 claims
- 0674US8367577B2Thin film of aluminum nitride and process for producing the thin film of aluminum nitrideSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 5, 2013·1 cites·5 claims
- 0766US9064706B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 23, 2015·1 cites·4 claims
- 0865US8323402B2Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystalTANIZAKI KEISUKE·Filed 2008·Granted Dec 4, 2012·3 cites·15 claims
- 0963US10829867B2GaAs crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Nov 10, 2020·0 cites·4 claims
- 1057US8293011B2Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystalMIYANAGA MICHIMASA·Filed 2008·Granted Oct 23, 2012·2 cites·5 claims
- 1153US2011110840A1Method for producing group iii-nitride crystal and group iii-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1252US2011042684A1Method of Growing AlN Crystals, and AlN LaminateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1351US8363326B2AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lensSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 29, 2013·0 cites·9 claims
- 1449US8591653B2Compound semiconductor single-crystal manufacturing device and manufacturing methodSATOH ISSEI·Filed 2009·Granted Nov 26, 2013·0 cites·11 claims
- 1549US2011076453A1AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission BodySUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1648US2010307405A1Method for Growing AlxGa1-xN Single CrystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1748US2011114016A1AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHODSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1847US2010242833A1AlN Crystal and Method of Its GrowthSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1946US2011104438A1AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENTSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2045US10301744B2GaAs crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 28, 2019·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →