Inventor · disambiguated record
Keitaro Tsuchiya
Also filed as: TSUCHIYA KEITARO
14 granted patents·13 pending applications·29 citations·filing 2013–2022
88Inventor score
Top patents by PatentIndex Score
27 records- 0186US10586701B2Semiconductor base having a composition graded buffer layer stackSANKEN ELECTRIC CO LTD·Filed 2016·Granted Mar 10, 2020·5 cites·19 claims
- 0285US10115589B2Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic deviceSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 30, 2018·4 cites·8 claims
- 0384US9673052B2Silicon-based substrate having first and second portionsSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jun 6, 2017·5 cites·8 claims
- 0481US10833184B2Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrateSANKEN ELECTRIC CO LTD·Filed 2017·Granted Nov 10, 2020·3 cites·17 claims
- 0580US10553674B2Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Feb 4, 2020·3 cites·20 claims
- 0680US10529842B2Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jan 7, 2020·3 cites·8 claims
- 0774US9876101B2Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·11 claims
- 0871US9966259B2Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted May 8, 2018·1 cites·8 claims
- 0971US9520286B2Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Dec 13, 2016·2 cites·20 claims
- 1064US10068985B2Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Sep 4, 2018·1 cites·8 claims
- 1152US2024258462A1Epitaxial wafer for ultraviolet ray emission device and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1251US2024429046A1Method for producing heteroepitaxial waferSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1350US2024079412A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1450US2018245240A1Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2018·Application pending·0 cites
- 1550US2025059675A1Nitride semiconductor substrate and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 1649US9938638B2Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2015·Granted Apr 10, 2018·0 cites·9 claims
- 1749US2023343890A1Epitaxial wafer for ultraviolet light emitting device, method for producing metal bonded substrate for ultraviolet light emitting device, method for producing ultraviolet light emitting device, and method for producing ultraviolet light emitting device arraySHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 1849US2024117525A1Nitride semiconductor substrate and method for producing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1948US2023279581A1Method for producing nitride semiconductor wafer and nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 2048US2024355620A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 2146US9401420B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jul 26, 2016·0 cites·9 claims
- 2244US9281187B2Method for manufacturing nitride semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Granted Mar 8, 2016·0 cites·8 claims
- 2341US2015028457A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Application pending·0 cites
- 2440US2015084163A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2013·Application pending·0 cites
- 2539US10319587B2Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growthSHINETSU HANDOTAI KK·Filed 2015·Granted Jun 11, 2019·0 cites·10 claims
- 2634US2017323960A1Epitaxial wafer, semiconductor device, method for producing epitaxial wafer, and method for producing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
- 2733US2017133217A1Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Keitaro Tsuchiya files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →