Inventor · disambiguated record
Khee Yong Lim
Also filed as: LIM KHEE YONG
36 granted patents·10 pending applications·105 citations·filing 2005–2024
96Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD34CHARTERED SEMICONDUCTOR MFG5IBM2TOH ENG HUAT2GLOBAL FOUNDRIES SINGAPORE PTE LTD1
Top patents by PatentIndex Score
46 records- 0193US10424568B1Image sensor with stacked SPAD and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Sep 24, 2019·10 cites·17 claims
- 0291US9343466B1Methods for fabricating flash memory cells and integrated circuits having flash memory cells embedded with logicGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted May 17, 2016·14 cites·20 claims
- 0391US7445978B2Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOSCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Nov 4, 2008·22 cites·31 claims
- 0487US11522097B2Diode devices and methods of forming diode devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Dec 6, 2022·2 cites·19 claims
- 0586US10103156B2Strap layout for non-volatile memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 0686US10020372B1Method to form thicker erase gate poly superflash NVMGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 10, 2018·5 cites·14 claims
- 0785US11462622B1Memory cells and methods of forming a memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 4, 2022·1 cites·20 claims
- 0884US11316063B2Diode devices and methods of forming a diode deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0984US10724983B2Sensor device and a method for forming the sensor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 1084US7256084B2Composite stress spacerCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Aug 14, 2007·12 cites·19 claims
- 1176US8963116B2Wrap around phase change memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Granted Feb 24, 2015·3 cites·20 claims
- 1274US8945997B2Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of sameGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Feb 3, 2015·3 cites·18 claims
- 1373US7816909B2Mechanical stress characterization in semiconductor deviceIBM·Filed 2008·Granted Oct 19, 2010·4 cites·10 claims
- 1472US9653365B1Methods for fabricating integrated circuits with low, medium, and/or high voltage transistors on an extremely thin silicon-on-insulator substrateGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 16, 2017·2 cites·17 claims
- 1571US8624329B2Spacer-less low-K dielectric processesLEE YONG MENG·Filed 2009·Granted Jan 7, 2014·5 cites·18 claims
- 1669US7999325B2Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOSGLOBALFOUNDRIES SG PTE LTD·Filed 2008·Granted Aug 16, 2011·3 cites·20 claims
- 1768US7615427B2Spacer-less low-k dielectric processesCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Nov 10, 2009·3 cites·20 claims
- 1866US8148221B2Double anneal with improved reliability for dual contact etch stop liner schemeLIM KHEE YONG·Filed 2009·Granted Apr 3, 2012·3 cites·34 claims
- 1965US12464833B2Avalanche photodetectors with a combined lateral and vertical arrangementGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 2061US7615433B2Double anneal with improved reliability for dual contact etch stop liner schemeCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Nov 10, 2009·1 cites·25 claims
- 2160US9520506B23D high voltage charge pumpGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 13, 2016·1 cites·20 claims
- 2260US2024219343A1Back gate ion-sensitive field effect transistor sensing with stacked high-k nanosheetsGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 2358US7436169B2Mechanical stress characterization in semiconductor deviceIBM·Filed 2005·Granted Oct 14, 2008·1 cites·2 claims
- 2457US12176405B1Field-effect transistors with airgap spacersGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Dec 24, 2024·0 cites·18 claims
- 2556US11152410B2Image sensor with reduced capacitance transfer gateGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Oct 19, 2021·0 cites·12 claims
- 2656US2024213390A1Photodiode devices, photodetectors, and methods of forming photodiode devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Application pending·0 cites
- 2755US12051761B2Multi-semiconductor layer photodetector and related methodGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Jul 30, 2024·0 cites·12 claims
- 2853US9444041B2Back-gated non-volatile memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Sep 13, 2016·1 cites·19 claims
- 2952US10608108B2Extended drain MOSFETs (EDMOS)GLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Mar 31, 2020·0 cites·17 claims
- 3051US9054209B2Compact charge trap multi-time programmable memoryTOH ENG HUAT·Filed 2012·Granted Jun 9, 2015·0 cites·12 claims
- 3148US9196830B2Wrap around phase change memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Nov 24, 2015·0 cites·20 claims
- 3247US11444168B2Transistor devices and methods of forming transistor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 3347US10991704B2Memory device and a method for forming the memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Apr 27, 2021·0 cites·23 claims
- 3447US2023058110A1Non-volatile memory devices with multi-layered floating gatesGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Application pending·0 cites
- 3547US2015236034A1Novel compact charge trap multi-time programmable memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Application pending·0 cites
- 3646US9362297B2Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 7, 2016·0 cites·20 claims
- 3746US2025048665A1Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and methodGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 3845US10707358B2Selective shielding of ambient light at chip levelGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jul 7, 2020·0 cites·12 claims
- 3945US2024421233A1Gated body transistorsGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 4045US2008315317A1Semiconductor system having complementary strained channelsCHARTERED SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 4143US9911867B2Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Mar 6, 2018·0 cites·20 claims
- 4243US2021328083A1Optoelectronic devices having an electrode with aperturesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Application pending·0 cites
- 4340US10395987B2Transistor with source-drain silicide pullbackGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Aug 27, 2019·0 cites·18 claims
- 4439US10522614B2Method to fabricate capacitance-matching FET and related deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 31, 2019·0 cites·19 claims
- 4538US2016190146A1Integrated circuits and methods for fabricating memory cells and integrated circuitsGLOBAL FOUNDRIES SINGAPORE PTE LTD·Filed 2014·Application pending·0 cites
- 4636US2014048867A1Multi-time programmable memoryTOH ENG HUAT·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →