Inventor · disambiguated record
Khanh Tran
Also filed as: TRAN KHANH · TRAN KHANH Q · TRAN KHANH QUOC
45 granted patents·2 pending applications·867 citations·filing 1995–2025
98Inventor score
Files withADVANCED MICRO DEVICES INC31MAXIM INTEGRATED PRODUCTS11EDWARDS LIFESCIENCES CORP1ELLUL JOSEPH P1FEIGHTNER RICK1
Top patents by PatentIndex Score
47 records- 0195US6351013B1Low-K sub spacer pocket formation for gate capacitance reductionADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 26, 2002·245 cites·6 claims
- 0292US9608130B2Semiconductor device having trench capacitor structure integrated thereinMAXIM INTEGRATED PRODUCTS·Filed 2012·Granted Mar 28, 2017·14 cites·10 claims
- 0390US9196672B2Semiconductor device having capacitor integrated thereinMAXIM INTEGRATED PRODUCTS·Filed 2012·Granted Nov 24, 2015·14 cites·16 claims
- 0489US9520462B1Semiconductor device having capacitor integrated thereinMAXIM INTEGRATED PRODUCTS·Filed 2015·Granted Dec 13, 2016·7 cites·18 claims
- 0587US7943473B2Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration schemeMAXIM INTEGRATED PRODUCTS·Filed 2009·Granted May 17, 2011·15 cites·40 claims
- 0683US9704809B2Fan-out and heterogeneous packaging of electronic componentsMAXIM INTEGRATED PRODUCTS·Filed 2013·Granted Jul 11, 2017·7 cites·12 claims
- 0782US12436337B2Low loss optical interposerPSIQUANTUM CORP·Filed 2024·Granted Oct 7, 2025·0 cites·16 claims
- 0878US10211172B2Wafer-based electronic component packagingMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Feb 19, 2019·5 cites·7 claims
- 0972US6522013B1Punch-through via with conformal barrier linerADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 18, 2003·44 cites·10 claims
- 1072US5866945ABorderless vias with HSQ gap filled patterned metal layersADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 2, 1999·35 cites·6 claims
- 1171US5982035AHigh integrity borderless vias with protective sidewall spacerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 9, 1999·34 cites·16 claims
- 1270US10056294B2Techniques for adhesive control between a substrate and a dieMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Aug 21, 2018·3 cites·10 claims
- 1369US6607962B2Globally planarized backend compatible thin film resistor contact/interconnect processMAXIM INTEGRATED PRODUCTS·Filed 2001·Granted Aug 19, 2003·19 cites·20 claims
- 1469US5942801ABorderless vias with HSQ gap filled metal patterns having high etching resistanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 24, 1999·31 cites·13 claims
- 1568US8344478B2Inductors having inductor axis parallel to substrate surfaceMAXIM INTEGRATED PRODUCTS·Filed 2009·Granted Jan 1, 2013·3 cites·16 claims
- 1668US6060384ABorderless vias with HSQ gap filled patterned metal layersADVANCED MICRO DEVICES INC·Filed 1998·Granted May 9, 2000·30 cites·18 claims
- 1768US5738917AProcess for in-situ deposition of a Ti/TiN/Ti aluminum underlayerADVANCED MICRO DEVICES INC·Filed 1995·Granted Apr 14, 1998·36 cites·3 claims
- 1867US8847365B2Inductors and methods for integrated circuitsELLUL JOSEPH P·Filed 2012·Granted Sep 30, 2014·2 cites·11 claims
- 1964US8243021B2Slide and rotate display configurations for a handheld computing deviceFEIGHTNER RICK·Filed 2006·Granted Aug 14, 2012·4 cites·25 claims
- 2064US6087724AHSQ with high plasma etching resistance surface for borderless viasADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·25 cites·11 claims
- 2162US6093635AHigh integrity borderless vias with HSQ gap filled patterned conductive layersADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 25, 2000·27 cites·29 claims
- 2262US5582881AProcess for deposition of a Ti/TiN cap layer on aluminum metallization and apparatusADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 10, 1996·24 cites·11 claims
- 2357US5925932ABorderless viasADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·20 cites·15 claims
- 2457US2025242134A1Expandable sheath including strain relief layerEDWARDS LIFESCIENCES CORP·Filed 2025·Application pending·0 cites
- 2555US6133142ALower metal feature profile with overhanging ARC layer to improve robustness of borderless viasADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 17, 2000·23 cites·13 claims
- 2654US6046106AHigh density plasma oxide gap filled patterned metal layers with improved electromigration resistanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 4, 2000·18 cites·25 claims
- 2753US6083851AHSQ with high plasma etching resistance surface for borderless viasADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 4, 2000·15 cites·20 claims
- 2852US6194328B1H2 diffusion barrier formation by nitrogen incorporation in oxide layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 27, 2001·14 cites·12 claims
- 2951US6008116ASelective etching for improved dielectric interlayer planarizationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 28, 1999·17 cites·15 claims
- 3048US6232223B1High integrity borderless vias with protective sidewall spacerADVANCED MICRO DEVICES INC·Filed 1999·Granted May 15, 2001·12 cites·5 claims
- 3148US5990558AReduced cracking in gap filling dielectricsADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·15 cites·27 claims
- 3247US6492258B1METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-μM AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBYADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 10, 2002·3 cites·8 claims
- 3347US6232221B1Borderless viasADVANCED MICRO DEVICES INC·Filed 1999·Granted May 15, 2001·12 cites·14 claims
- 3446US6043147AMethod of prevention of degradation of low dielectric constant gap-fill materialADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 28, 2000·11 cites·19 claims
- 3546US6030891AVacuum baked HSQ gap fill layer for high integrity borderless viasADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 29, 2000·12 cites·27 claims
- 3646US2021038080A1Optical diagnostic sensor systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2020·Application pending·0 cites
- 3745US6329718B1Method for reducing stress-induced voids for 0.25mμ and smaller semiconductor chip technology by annealing interconnect lines and using low bias voltage and low interlayer dielectric deposition rate and semiconductor chip made therebyADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 11, 2001·12 cites·7 claims
- 3845US5888911AHSQ processing for reduced dielectric constantADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 30, 1999·11 cites·12 claims
- 3940US6472751B1H2 diffusion barrier formation by nitrogen incorporation in oxide layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 29, 2002·0 cites·9 claims
- 4040US6097090AHigh integrity viasADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·9 cites·20 claims
- 4140US5888898AHSQ baking for reduced dielectric constantADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 30, 1999·8 cites·10 claims
- 4239US9882075B2Light sensor with vertical diode junctionsMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Jan 30, 2018·0 cites·14 claims
- 4339US6100179AElectromigration resistant patterned metal layer gap filled with HSQADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 8, 2000·7 cites·7 claims
- 4439US6034420AElectromigration resistant patterned metal layer gap filled with HSQADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 7, 2000·7 cites·7 claims
- 4539US5973387ATapered isolated metal profile to reduce dielectric layer crackingADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 26, 1999·7 cites·27 claims
- 4636US6319859B1Borderless vias with HSQ gap filled metal patterns having high etching resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 20, 2001·4 cites·17 claims
- 4728US6163818AStreaming memory controller for a PCI busXEROX CORP·Filed 1998·Granted Dec 19, 2000·6 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →