Inventor · disambiguated record
Ki Yeol Park
Also filed as: PARK KI YEOL
49 granted patents·10 pending applications·1,662 citations·filing 1996–2015
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD18JEON WOO CHUL11SAMSUNG ELECTRO MECH9CHOI PUN JAE6PARK YOUNG HWAN4
Top patents by PatentIndex Score
59 records- 0198US8981395B2Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 17, 2015·29 cites·18 claims
- 0298US8263987B2Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the sameCHOI PUN JAE·Filed 2011·Granted Sep 11, 2012·474 cites·9 claims
- 0398US7985976B2Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the sameSAMSUNG LED CO LTD·Filed 2010·Granted Jul 26, 2011·476 cites·14 claims
- 0498US7964881B2Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the sameSAMSUNG LED CO LTD·Filed 2008·Granted Jun 21, 2011·495 cites·12 claims
- 0594US8525231B2Semiconductor device and method of manufacturing the samePARK KI YEOL·Filed 2010·Granted Sep 3, 2013·29 cites·30 claims
- 0693US9379288B2Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 28, 2016·8 cites·20 claims
- 0793US8860089B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 14, 2014·15 cites·21 claims
- 0892US7786498B2Light emitting device and package having the sameSAMSUNG LED CO LTD·Filed 2008·Granted Aug 31, 2010·26 cites·16 claims
- 0989US8525227B2Semiconductor device and method of manufacturing the sameJEON WOO CHUL·Filed 2010·Granted Sep 3, 2013·12 cites·20 claims
- 1089US8384130B2Nitride semiconductor device having a two-dimensional electron gas (2DEG) channelSAMSUNG ELECTRO MECH·Filed 2011·Granted Feb 26, 2013·8 cites·17 claims
- 1186US9231093B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·8 cites·26 claims
- 1286US8716754B2Nitride semiconductor devicePARK YOUNG HWAN·Filed 2012·Granted May 6, 2014·8 cites·9 claims
- 1385US9245738B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 26, 2016·6 cites·16 claims
- 1484US7795054B2Vertical structure LED device and method of manufacturing the sameSAMSUNG LED CO LTD·Filed 2007·Granted Sep 14, 2010·8 cites·20 claims
- 1583US8772834B2High electron mobility transistor and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 8, 2014·5 cites·39 claims
- 1681US8890212B2Normally-off high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 18, 2014·5 cites·18 claims
- 1781US8847266B2Semiconductor light emitting deviceCHOI PUN JAE·Filed 2008·Granted Sep 30, 2014·7 cites·19 claims
- 1880US8753910B2Vertical structure LED device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jun 17, 2014·2 cites·20 claims
- 1978US8501557B2Method of manufacturing nitride semiconductor deviceSAMSUNG ELECTRO MECH·Filed 2013·Granted Aug 6, 2013·3 cites·8 claims
- 2077US9306544B2Electronic device including transistor and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 5, 2016·4 cites·36 claims
- 2176US8373245B22DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the sameSAMSUNG ELECTRO MECH·Filed 2010·Granted Feb 12, 2013·3 cites·7 claims
- 2275US9087704B2Semiconductor devices and methods of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 21, 2015·4 cites·44 claims
- 2374US8860087B2Nitride semiconductor device and manufacturing method thereofPARK YOUNG HWAN·Filed 2012·Granted Oct 14, 2014·3 cites·23 claims
- 2473US9147738B2High electron mobility transistor including plurality of gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 29, 2015·3 cites·27 claims
- 2571US8896026B2Semicondutor deviceJEON WOO CHUL·Filed 2011·Granted Nov 25, 2014·3 cites·13 claims
- 2668US9379102B2Nitride-based semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 28, 2016·2 cites·6 claims
- 2766US9461637B2Method and apparatus for controlling a gate voltage in high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 4, 2016·2 cites·19 claims
- 2866US8063407B2Light emitting device and package having the same for maximizing light emitting areaCHOI PUN JAE·Filed 2010·Granted Nov 22, 2011·2 cites·17 claims
- 2965US9231057B2Power switching device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·1 cites·11 claims
- 3065US8907377B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·1 cites·32 claims
- 3165US8319308B2Semiconductor device and method for manufacturing of the sameJEON WOO CHUL·Filed 2010·Granted Nov 27, 2012·2 cites·19 claims
- 3265US8188496B2Semiconductor light emitting device including substrate having protection layers and method for manufacturing the sameCHO MYONG SOO·Filed 2009·Granted May 29, 2012·2 cites·6 claims
- 3363US9570597B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 14, 2017·1 cites·13 claims
- 3460US8373200B2Nitride based semiconductor device and method for manufacturing of the sameSAMSUNG ELECTRO MECH·Filed 2010·Granted Feb 12, 2013·1 cites·10 claims
- 3559US8735940B2Semiconductor device and method for manufacturing the sameJEON WOO CHUL·Filed 2010·Granted May 27, 2014·1 cites·30 claims
- 3658USRE47417ESemiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 4, 2019·0 cites·30 claims
- 3758US8933531B2Semiconductor device having schottky diode structureSAMSUNG ELECTRO MECH·Filed 2012·Granted Jan 13, 2015·1 cites·5 claims
- 3856US8916402B2Semiconductor light emitting device including substrate having protection layers providing protection against chemicals and method for manufacturing the sameCHO MYONG SOO·Filed 2012·Granted Dec 23, 2014·0 cites·12 claims
- 3955US8624276B2Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the sameCHOI PUN JAE·Filed 2012·Granted Jan 7, 2014·0 cites·18 claims
- 4054US9018666B2Semiconductor light emitting deviceCHOI PUN JAE·Filed 2010·Granted Apr 28, 2015·0 cites·15 claims
- 4154US2011297992A1Semiconductor light emitting deviceCHOI PUN JAE·Filed 2011·Application pending·0 cites
- 4253US8309970B2Vertical structure LED device and method of manufacturing the sameCHO MYONG SOO·Filed 2010·Granted Nov 13, 2012·0 cites·8 claims
- 4352US8883599B22DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the sameSAMSUNG ELECTRO MECH·Filed 2012·Granted Nov 11, 2014·0 cites·3 claims
- 4447US9209250B2High electron mobility transistors, methods of manufacturing the same, and electronic devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 8, 2015·0 cites·21 claims
- 4546US8294107B2Low-luminance imaging device using silicon photomultiplierAN SUNG YONG·Filed 2010·Granted Oct 23, 2012·0 cites·11 claims
- 4645US8319309B2Semiconductor device and method for manufacturing of the sameJEON WOO CHUL·Filed 2010·Granted Nov 27, 2012·0 cites·34 claims
- 4745US2011057233A1Semiconductor component and method for manufacturing of the sameSAMSUNG ELECTRO MECH·Filed 2009·Application pending·0 cites
- 4844US8841704B2Nitride based semiconductor device and manufacturing method thereofPARK YOUNG HWAN·Filed 2012·Granted Sep 23, 2014·0 cites·5 claims
- 4941US2013009165A1Nitride semiconductor device, method for manufacturing the same and nitride semiconductor power deviceSAMSUNG ELECTRO MECH·Filed 2012·Application pending·0 cites
- 5040US2012267639A1Nitride semiconductor device and method for manufacturing the sameJEON WOO CHUL·Filed 2012·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →