Inventor · disambiguated record
Kimberly Gay Reid
Also filed as: REID KIMBERLY G · Reid Kimberly Gay
38 granted patents·10 pending applications·1,128 citations·filing 2001–2022
97Inventor score
Files withADVANCED RISC MACH LTD34TOKYO ELECTRON LTD7CERFE LABS INC2FREESCALE SEMICONDUCTOR INC1MEMJET TECHNOLOGY LTD1
Top patents by PatentIndex Score
48 records- 0199US9660189B1Barrier layer for correlated electron materialADVANCED RISC MACH LTD·Filed 2016·Granted May 23, 2017·40 cites·19 claims
- 0299US9627615B1Fabrication of correlated electron material devicesADVANCED RISC MACH LTD·Filed 2016·Granted Apr 18, 2017·65 cites·23 claims
- 0399US7994070B1Low-temperature dielectric film formation by chemical vapor depositionTOKYO ELECTRON LTD·Filed 2010·Granted Aug 9, 2011·416 cites·18 claims
- 0499US7816278B2In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor depositionTOKYO ELECTRON LTD·Filed 2008·Granted Oct 19, 2010·523 cites·19 claims
- 0597US9997702B2Fabrication of correlated electron material films with varying atomic or molecular concentrations of dopant speciesADVANCED RISC MACH LTD·Filed 2016·Granted Jun 12, 2018·18 cites·15 claims
- 0697US9978942B2Correlated electron switch structures and applicationsADVANCED RISC MACH LTD·Filed 2016·Granted May 22, 2018·17 cites·11 claims
- 0789US10516110B2Fabrication of correlated electron material devices with reduced interfacial layer impedanceADVANCED RISC MACH LTD·Filed 2016·Granted Dec 24, 2019·2 cites·12 claims
- 0889US7776763B2In-situ formation of oxidized aluminum nitride filmsTOKYO ELECTRON LTD·Filed 2007·Granted Aug 17, 2010·9 cites·17 claims
- 0988US10141504B2Methods and processes for forming devices from correlated electron material (CEM)ADVANCED RISC MACH LTD·Filed 2017·Granted Nov 27, 2018·5 cites·9 claims
- 1087US10014468B2Barrier layer for correlated electron materialADVANCED RISC MACH LTD·Filed 2017·Granted Jul 3, 2018·4 cites·19 claims
- 1182US10937831B2Correlated electron switch structures and applicationsADVANCED RISC MACH LTD·Filed 2019·Granted Mar 2, 2021·1 cites·20 claims
- 1280US10381560B2Fabrication of correlated electron material films with varying atomic or molecular concentrations of dopant speciesADVANCED RISC MACH LTD·Filed 2018·Granted Aug 13, 2019·2 cites·18 claims
- 1378US10193063B2Switching device formed from correlated electron materialADVANCED RISC MACH LTD·Filed 2016·Granted Jan 29, 2019·2 cites·10 claims
- 1478US10121967B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2016·Granted Nov 6, 2018·2 cites·14 claims
- 1576US10586924B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2016·Granted Mar 10, 2020·2 cites·10 claims
- 1676US10580982B2Fabrication of correlated electron material devices method to control carbonADVANCED RISC MACH LTD·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 1776US10276795B2Fabrication of correlated electron material film via exposure to ultraviolet energyADVANCED RISC MACH LTD·Filed 2016·Granted Apr 30, 2019·2 cites·21 claims
- 1872US10403816B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2018·Granted Sep 3, 2019·1 cites·20 claims
- 1970US10134986B2Correlated electron material devices using dopant species diffused from nearby structuresADVANCED RISC MACH LTD·Filed 2016·Granted Nov 20, 2018·1 cites·14 claims
- 2070US10128438B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2016·Granted Nov 13, 2018·2 cites·11 claims
- 2169US10038141B2Fabrication of correlated electron material devicesADVANCED RISC MACH LTD·Filed 2017·Granted Jul 31, 2018·2 cites·14 claims
- 2265US10170700B2Fabrication of correlated electron material devices method to control carbonADVANCED RISC MACH LTD·Filed 2016·Granted Jan 1, 2019·0 cites·13 claims
- 2364US10658587B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2018·Granted May 19, 2020·1 cites·21 claims
- 2463US7534731B2Method for growing a thin oxynitride film on a substrateTOKYO ELECTRON LTD·Filed 2007·Granted May 19, 2009·1 cites·19 claims
- 2562US10854814B2Correlated electron material devices using dopant species diffused from nearby structuresADVANCED RISC MACH LTD·Filed 2018·Granted Dec 1, 2020·0 cites·16 claims
- 2661US10446609B2Correlated electron switch structures and applicationsADVANCED RISC MACH LTD·Filed 2018·Granted Oct 15, 2019·0 cites·18 claims
- 2760US11011701B2Switching device formed from correlated electron materialCERFE LABS INC·Filed 2019·Granted May 18, 2021·0 cites·19 claims
- 2860US10727406B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2018·Granted Jul 28, 2020·0 cites·18 claims
- 2959US11691421B2Thermal bend actuator having improved lifetimeMEMJET TECHNOLOGY LTD·Filed 2022·Granted Jul 4, 2023·0 cites·17 claims
- 3059US11522133B2Correlated electron device formed via conversion of conductive substrate to a correlated electron regionCERFE LABS INC·Filed 2019·Granted Dec 6, 2022·0 cites·19 claims
- 3157US12171995B1Methods for improved biocompatibility for human implanted medical devicesPARADROMICS INC·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 3257US2020052201A1Controlling dopant concentration in correlated electron materialsADVANCED RISC MACH LTD·Filed 2019·Application pending·0 cites
- 3357US2020176677A1Fabrication of correlated electron material devices with reduced interfacial layer impedanceADVANCED RISC MACH LTD·Filed 2019·Application pending·0 cites
- 3455US10707415B2Methods and processes for forming devices from correlated electron material (CEM)ADVANCED RISC MACH LTD·Filed 2018·Granted Jul 7, 2020·0 cites·17 claims
- 3554US10454026B2Controlling dopant concentration in correlated electron materialsADVANCED RISC MACH LTD·Filed 2016·Granted Oct 22, 2019·0 cites·18 claims
- 3654US10217935B2Correlated electron device formed via conversion of conductive substrate to a correlated electron regionADVANCED RISC MACH LTD·Filed 2016·Granted Feb 26, 2019·0 cites·15 claims
- 3754US6949455B2Method for forming a semiconductor device structure a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 27, 2005·6 cites·5 claims
- 3853US10103327B2CEM switching deviceADVANCED RISC MACH LTD·Filed 2016·Granted Oct 16, 2018·0 cites·10 claims
- 3949US7659214B2Method for growing an oxynitride film on a substrateTOKYO ELECTRON LTD·Filed 2007·Granted Feb 9, 2010·0 cites·20 claims
- 4048US6689676B1Method for forming a semiconductor device structure in a semiconductor layerMOTOROLA INC·Filed 2002·Granted Feb 10, 2004·4 cites·15 claims
- 4143US2018216228A1Fabrication of correlated electron material devicesADVANCED RISC MACH LTD·Filed 2018·Application pending·0 cites
- 4240US2005056219A1Formation of a metal-containing film by sequential gas exposure in a batch type processing systemTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 4339US2018175290A1Forming nucleation layers in correlated electron material devicesADVANCED RISC MACH LTD·Filed 2016·Application pending·0 cites
- 4438US2007037412A1In-situ atomic layer depositionTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 4537US2017244027A1Method providing for a storage elementADVANCED RISC MACH LTD·Filed 2016·Application pending·0 cites
- 4637US2017237001A1Fabrication of correlated electron material devices comprising nitrogenADVANCED RISC MACH LTD·Filed 2016·Application pending·0 cites
- 4734US2017213960A1Fabrication and operation of correlated electron material devicesADVANCED RISC MACH LTD·Filed 2016·Application pending·0 cites
- 4833US2002187651A1Method for making a semiconductor deviceFiled 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kimberly Gay Reid files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →