Inventor · disambiguated record
Klaus Hummler
Also filed as: HUMMLER KLAUS · HUMMLER KLAUS M · HUMMLER KLAUS MARTIN
40 granted patents·5 pending applications·338 citations·filing 1996–2023
98Inventor score
Files withINFINEON TECHNOLOGIES AG15ASML NETHERLANDS BV9INFINEON TECHNOLOGIES CORP5QIMONDA NORTH AMERICA CORP5HUMMLER KLAUS4
Top patents by PatentIndex Score
45 records- 0192US7401270B2Repair of semiconductor memory device via external commandINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 15, 2008·28 cites·28 claims
- 0291US11340532B2Prolonging optical element lifetime in an EUV lithography systemASML NETHERLANDS BV·Filed 2019·Granted May 24, 2022·5 cites·29 claims
- 0390US7694196B2Self-diagnostic scheme for detecting errorsQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Apr 6, 2010·21 cites·20 claims
- 0490US7373583B2ECC flag for testing on-chip error correction circuitINFINEON TECHNOLOGIES CORP·Filed 2005·Granted May 13, 2008·23 cites·25 claims
- 0588US11266002B2System for monitoring a plasmaASML NETHERLANDS BV·Filed 2018·Granted Mar 1, 2022·3 cites·29 claims
- 0688US7725862B2Signal routing on redistribution layerQIMONDA AG·Filed 2008·Granted May 25, 2010·14 cites·19 claims
- 0785US7882324B2Method and apparatus for synchronizing memory enabled systems with master-slave architectureQIMONDA AG·Filed 2007·Granted Feb 1, 2011·16 cites·25 claims
- 0885US7272070B2Memory access using multiple activated memory cell rowsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 18, 2007·36 cites·20 claims
- 0984US11846887B2Prolonging optical element lifetime in an EUV lithography systemASML NETHERLANDS BV·Filed 2022·Granted Dec 19, 2023·1 cites·25 claims
- 1084US8614145B2Through substrate via formation processing using sacrificial materialHUMMLER KLAUS·Filed 2011·Granted Dec 24, 2013·10 cites·11 claims
- 1184US7975170B2Memory refresh system and methodQIMONDA AG·Filed 2007·Granted Jul 5, 2011·16 cites·19 claims
- 1283US7420862B2Data inversion device and methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 2, 2008·14 cites·26 claims
- 1383US6617213B2Method for achieving high self-aligning vertical gate studs relative to the support isolation levelINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 9, 2003·25 cites·12 claims
- 1480US6573136B1Isolating a vertical gate contact structureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 3, 2003·20 cites·19 claims
- 1578US11822252B2Guiding device and associated systemASML NETHERLANDS BV·Filed 2021·Granted Nov 21, 2023·1 cites·20 claims
- 1674US7382673B2Memory having parity generation circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jun 3, 2008·9 cites·25 claims
- 1770US7721010B2Method and apparatus for implementing memory enabled systems using master-slave architectureQIMONDA NORTH AMERICA CORP·Filed 2007·Granted May 18, 2010·7 cites·5 claims
- 1870US7440309B2Memory having parity error correctionINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 21, 2008·7 cites·21 claims
- 1969US2024160109A1Prolonging optical element lifetime in an euv lithography systemASML NETHERLANDS BV·Filed 2023·Application pending·0 cites
- 2066US12171053B2System for monitoring a plasmaASML NETHERLANDS BV·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 2164US6873003B2Nonvolatile memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 29, 2005·16 cites·50 claims
- 2263US12389519B2Guiding device and associated systemASML NETHERLANDS BV·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 2363US7944047B2Method and structure of expanding, upgrading, or fixing multi-chip packageQIMONDA AG·Filed 2007·Granted May 17, 2011·2 cites·20 claims
- 2463US7688665B2Structure to share internally generated voltages between chips in MCPQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Mar 30, 2010·2 cites·17 claims
- 2562US6586300B1Spacer assisted trench top isolation for vertical DRAM'sINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 1, 2003·10 cites·21 claims
- 2658US6620677B1Support liner for isolation trench height control in vertical DRAM processingINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 16, 2003·8 cites·32 claims
- 2757US7471569B2Memory having parity error correctionINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 30, 2008·3 cites·17 claims
- 2857US6734059B1Semiconductor device with deep trench isolation and method of manufacturing sameINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 11, 2004·7 cites·9 claims
- 2956US6673686B1Method of forming a gate electrode contact spacer for a vertical DRAM deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 6, 2004·6 cites·16 claims
- 3055US8138610B2Multi-chip package with interconnected stacked chipsOH JONG HOON·Filed 2008·Granted Mar 20, 2012·1 cites·20 claims
- 3155US7164613B2Flexible internal address counting method and apparatusINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jan 16, 2007·8 cites·21 claims
- 3255US6724030B2System and method for back-side contact for trench semiconductor device characterizationINFINEON TECHNOLOGIES CORP·Filed 2002·Granted Apr 20, 2004·6 cites·5 claims
- 3353US6740558B1SiGe vertical gate contact for gate conductor post etch treatmentINFINEON TECHNOLOGIES AB·Filed 2002·Granted May 25, 2004·6 cites·2 claims
- 3452US10955749B2Guiding device and associated systemASML NETHERLANDS BV·Filed 2018·Granted Mar 23, 2021·0 cites·20 claims
- 3549US7391107B2Signal routing on redistribution layerINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jun 24, 2008·0 cites·15 claims
- 3649US7091553B2Top oxide nitride liner integration scheme for vertical DRAMINFINEON TECHNOLOGIES CORP·Filed 2005·Granted Aug 15, 2006·0 cites·18 claims
- 3746US12287455B2Oxygen-loss resistant top coating for optical elementsASML NETHERLANDS BV·Filed 2020·Granted Apr 29, 2025·0 cites·10 claims
- 3846US7423445B2Method and system for trimming voltage or current referencesQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Sep 9, 2008·1 cites·10 claims
- 3946US6972266B2Top oxide nitride liner integration scheme for vertical DRAMINFINEON TECHNOLOGIES CORP·Filed 2003·Granted Dec 6, 2005·2 cites·12 claims
- 4039US7539034B2Memory configured on a common substrateQIMONDA NORTH AMERICA CORP·Filed 2007·Granted May 26, 2009·0 cites·30 claims
- 4138US2005170661A1Method of forming a trench structureINFINEON TECHNOLOGIES CORP·Filed 2004·Application pending·0 cites
- 4237US2013320359A1Heterogeneous stack structures with optical to electrical timing reference distributionHUMMLER KLAUS·Filed 2012·Application pending·0 cites
- 4336US2013299950A1Semiconductor structure with buried through substrate viasHUMMLER KLAUS·Filed 2012·Application pending·0 cites
- 4430US5747802AAutomated non-visual method of locating periodically arranged sub-micron objectsSIEMENS AG·Filed 1996·Granted May 5, 1998·4 cites·20 claims
- 4530US2006265636A1Optimized testing of on-chip error correction circuitHUMMLER KLAUS·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →