Inventor · disambiguated record
Klaus Schruefer
Also filed as: SCHRUEFER KLAUS · SCHRUEFER KLAUS MAX
19 granted patents·6 pending applications·220 citations·filing 2002–2023
94Inventor score
Top patents by PatentIndex Score
25 records- 0195US8106424B2Field effect transistor with a heterostructureSCHRUEFER KLAUS·Filed 2010·Granted Jan 31, 2012·121 cites·11 claims
- 0293US7888775B2Vertical diode using silicon formed by selective epitaxial growthINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 15, 2011·21 cites·12 claims
- 0391US7723786B2Apparatus of memory array using FinFETsKAKOSCHKE RONALD·Filed 2007·Granted May 25, 2010·16 cites·20 claims
- 0488US8310027B2Electronic device and manufacturing method thereofRUSS CHRISTIAN·Filed 2008·Granted Nov 13, 2012·17 cites·26 claims
- 0585US7824993B2Field-effect transistor with local source/drain insulation and associated method of productionINFINEON TECHNOLOGIES AG·Filed 2009·Granted Nov 2, 2010·7 cites·10 claims
- 0684US8629500B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorHOLZ JUERGEN·Filed 2005·Granted Jan 14, 2014·12 cites·23 claims
- 0781US8039904B2Apparatus of memory array using finfetsINFINEON TECHNOLOGIES AG·Filed 2010·Granted Oct 18, 2011·4 cites·15 claims
- 0879US9012995B2Semiconductor device including FinFET deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·3 cites·28 claims
- 0974US8183120B2Method of making bipolar FinFET technologyKAKOSCHKE RONALD·Filed 2010·Granted May 22, 2012·3 cites·10 claims
- 1073US8067808B2Apparatus of memory array using FinFETsKAKOSCHKE RONALD·Filed 2010·Granted Nov 29, 2011·2 cites·16 claims
- 1170US9437593B2Silicided semiconductor structure and method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Sep 6, 2016·2 cites·19 claims
- 1270US8318553B2Vertical diode using silicon formed by selective epitaxial growthRUSS CHRISTIAN·Filed 2011·Granted Nov 27, 2012·2 cites·5 claims
- 1369US9219063B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 22, 2015·2 cites·20 claims
- 1461US7491612B2Field effect transistor with a heterostructure and associated production methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 17, 2009·5 cites·7 claims
- 1555US2024332126A1Thermal grounding in backside power schemes using carrier wafersINTEL CORP·Filed 2023·Application pending·0 cites
- 1654US8952487B2Electronic circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 10, 2015·0 cites·20 claims
- 1754US7804110B2Field effect transistor with a heterostructureINFINEON TECHNOLOGIES AG·Filed 2009·Granted Sep 28, 2010·3 cites·2 claims
- 1854US2016118477A1Method of production of field-effect transistor with local source/drain insulationINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 1952US8552475B2Apparatus of memory array using FinFETsKAKOSCHKE RONALD·Filed 2011·Granted Oct 8, 2013·0 cites·16 claims
- 2052US2023197613A1Replacement via and buried or backside power railINTEL CORP·Filed 2021·Application pending·0 cites
- 2151US9240462B2Field-effect transistor with local source/drain insulation and associated method of productionHOLZ JUERGEN·Filed 2010·Granted Jan 19, 2016·0 cites·8 claims
- 2251US8865592B2Silicided semiconductor structure and method of forming the sameYAN JIANG·Filed 2009·Granted Oct 21, 2014·0 cites·4 claims
- 2349US2013009215A1Vertical diode using silicon formed by selective epitaxial growthINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 2439US2008283925A1Multi-Fin Component Arrangement and Method for Manufacturing a Multi-Fin Component ArrangementBERTHOLD JOERG·Filed 2008·Application pending·0 cites
- 2535US2004053439A1Method for producing low-resistance ohmic contacts between substrates and wells in CMOS integrated circuitsINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →