Vertical diode using silicon formed by selective epitaxial growth

Abstract

Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.

1 . An apparatus comprising:
 a semiconductive body, wherein the semiconductive body defines a first lateral dimension;   an epitaxial first film disposed above and on a first doping region of the semiconductive body;   a diode junction configured to allow vertically directed diode activity between the semiconductive body and the epitaxial first film;   an epitaxial second film disposed above and on a second doping region of the semiconductive body; and   a gate structure disposed above the semiconductive body, and also disposed between the epitaxial first film and the epitaxial second film.   
     
     
         2 . The apparatus of  claim 1 , wherein the epitaxial first film and the epitaxial second film are spaced apart on the semiconductive body, the apparatus further including:
 a third doping region of the semiconductive body is disposed below the gate structure.   
     
     
         3 . The apparatus of  claim 1 , further including:
 a silicide first layer disposed on the epitaxial first film;   a first contact disposed on the silicide first layer;   a silicide second layer disposed on the epitaxial second film; and   a second contact disposed on the silicide second layer.   
     
     
         4 . The apparatus of  claim 1 , wherein the semiconductor body is one of multiple semiconductor bodies coupled in parallel, wherein a first doping region is coupled to a first contact, and a second doping region is coupled to a second contact. 
     
     
         5 . The apparatus of  claim 1 , further including a hard mask disposed between the epitaxial first film and the epitaxial second film. 
     
     
         6 . An apparatus comprising:
 a semiconductive fin disposed above and on one of a dielectric substrate and a bulk semiconductor;   an epitaxial first film disposed above and on the semiconductive fin at a first doping region thereof, wherein the epitaxial first film includes a top surface and a lateral surface, and wherein the epitaxial first film includes a diode junction boundary with the semiconductive fin; and   a vertical diode junction formed at the semiconductive fin and the diode boundary.   
     
     
         7 . The apparatus of  claim 6 , further including an epitaxial second film disposed above and on the semiconductive fin at a second doping region thereof, and wherein the diode junction is disposed between the epitaxial first film and the epitaxial second film. 
     
     
         8 . The apparatus of  claim 6 , further including a gate disposed above the semiconductive fin, and further disposed between the first doping region and the second doping region. 
     
     
         9 . The apparatus of  claim 7 , further including:
 a silicide first layer disposed on the epitaxial first film;   a first contact disposed on the silicide first layer;   a silicide second layer disposed on the epitaxial second film; and   a second contact disposed on the silicide second layer.   
     
     
         10 . The apparatus of  claim 7 , wherein:
 the semiconductive fin is one of multiple semiconductive fins coupled in parallel;   the first doping region is coupled to a first contact; and   the second doping region is coupled to a second contact.   
     
     
         11 . A process comprising:
 patterning a semiconductive body upon a substrate, wherein the semiconductive body includes a first doping region and a second doping region;   forming a hard mask over a portion of the semiconductive body, and using the hard mask as a blocking structure;   growing a selective-growth (SEG) first film above the first doping region;   growing a SEG second film above the second region;   forming a self-aligned silicide first region from a portion of the SEG first film; and   forming a self-aligned silicide second region from a portion of the SEG second film.   
     
     
         12 . The process of  claim 11 , wherein growing at least one of the SEG first film and the SEG second film is done with in situ doping thereof. 
     
     
         13 . The process of  claim 11 , wherein the hard mask is disposed over a gate stack, the SEG first film, and the SEG second film, the process further including:
 implanting a portion of the first doping region that is exposed between the hard mask and the SEG first film, wherein implanting is carried out with one of a P or an N-type dopant; and   implanting a portion of the second doping region that is exposed between the hard mask and the SEG second film, wherein implanting is carried out with the other of the P or the N-type dopant.   
     
     
         14 . The process of  claim 11 , further including:
 coupling the SEG first film to an external structure; and   coupling the SEG second film to the external structure.   
     
     
         15 . The process of  claim 11 , further including:
 forming a gate above and on the semiconductive body.   
     
     
         16 . The process of  claim 15 , further including:
 extension implanting the semiconductive body about the gate.   
     
     
         17 . The process of  claim 16 , further including:
 forming a gate spacer about the gate.   
     
     
         18 . The process of  claim 11 , further including:
 implanting the SEG first film.   
     
     
         19 . The process of  claim 18 , further including:
 implanting the SEG second film.   
     
     
         20 . The process of  claim 11 , wherein:
 the semiconductive body comprises a fin;   the substrate comprises a dielectric; and   
       the hard mask comprises a photomask and resist.