Inventor · disambiguated record
Ko-Hsing Chang
Also filed as: CHANG KO-HSING
31 granted patents·10 pending applications·558 citations·filing 1998–2008
97Inventor score
Files withPOWERCHIP SEMICONDUCTOR CORP28CHANG KO-HSING5WORLDWIDE SEMICONDUCTOR MANUFA5HSU HANN-JYE1WORLDWIDE SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
41 records- 0194US6635533B1Method of fabricating flash memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted Oct 21, 2003·100 cites·17 claims
- 0290US7208796B2Split gate flash memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Apr 24, 2007·31 cites·19 claims
- 0386US6096603AMethod of fabricating a split gate structure of a flash memoryWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 1, 2000·78 cites·23 claims
- 0483US7446370B2Non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2006·Granted Nov 4, 2008·8 cites·10 claims
- 0582US6943404B2Sonos multi-level memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted Sep 13, 2005·26 cites·7 claims
- 0682US6794710B2Split-gate flash memory structure and method of manufacturePOWERCHIP SEMICONDUCTOR CORP·Filed 2002·Granted Sep 21, 2004·30 cites·7 claims
- 0780US6768162B1Split gate flash memory cell and manufacturing method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted Jul 27, 2004·23 cites·6 claims
- 0879US7056787B2Method of manufacturing semiconductor devicePOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jun 6, 2006·9 cites·20 claims
- 0978US7491998B2One time programmable memory and the manufacturing method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2006·Granted Feb 17, 2009·8 cites·20 claims
- 1078US6143606AMethod for manufacturing split-gate flash memory cellWORLDWIDE SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·37 cites·19 claims
- 1175US7049189B2Method of fabricating non-volatile memory cell adapted for integration of devices and for multiple read/write operationsPOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted May 23, 2006·21 cites·11 claims
- 1275US6815758B1Flash memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted Nov 9, 2004·17 cites·8 claims
- 1375US6737700B1Non-volatile memory cell structure and method for manufacturing thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted May 18, 2004·17 cites·5 claims
- 1474US6821849B2Split gate flash memory cell and manufacturing method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Nov 23, 2004·16 cites·12 claims
- 1573US7038267B2Non-volatile memory cell and manufacturing method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted May 2, 2006·15 cites·10 claims
- 1672US7091550B2Non-volatile memory device and method of manufacturing the samePOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Aug 15, 2006·17 cites·8 claims
- 1767US7164177B2Multi-level memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Jan 16, 2007·13 cites·9 claims
- 1865US5973354ASingle polycylindrical flash memory cell having high coupling ratioWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Oct 26, 1999·20 cites·5 claims
- 1963US6870212B2Trench flash memory device and method of fabricating thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2002·Granted Mar 22, 2005·10 cites·20 claims
- 2062US6026028AHot carrier injection programming and negative gate voltage channel erase flash EEPROM structureWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Feb 15, 2000·23 cites·11 claims
- 2161US7405124B2Fabricating method of non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jul 29, 2008·2 cites·21 claims
- 2257US7192832B2Flash memory cell and fabricating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Mar 20, 2007·6 cites·10 claims
- 2356US7074674B1Method for manufacturing one-time electrically programmable read only memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jul 11, 2006·1 cites·17 claims
- 2452US6869842B2Method for manufacturing non-volatile memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·4 cites·7 claims
- 2551US6117748ADishing free process for shallow trench isolationWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Sep 12, 2000·17 cites·14 claims
- 2651US2009004796A1Method of manufacturing non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 2748US7575941B2Method of manufacturing photodiodePOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Aug 18, 2009·2 cites·8 claims
- 2845US7098109B2Multi-level memory cell and fabricating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Aug 29, 2006·0 cites·12 claims
- 2945US6867099B2Spilt-gate flash memory structure and method of manufacturePOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Mar 15, 2005·2 cites·9 claims
- 3044US2006128102A1Manufacturing method of an non-volatile memory cellCHANG KO-HSING·Filed 2006·Application pending·0 cites
- 3143US2007155087A1Method of manufacturing split gate flash memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Application pending·0 cites
- 3241US7394126B2Non-volatile memory and manufacturing method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·0 cites·19 claims
- 3341US2008191262A1Non-volatile memory and fabricating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Application pending·0 cites
- 3440US7528438B2Non-volatile memory including assist gatePOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted May 5, 2009·0 cites·8 claims
- 3540US6103575AMethod of forming a single poly cylindrical flash memory cell having high coupling ratioWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 15, 2000·5 cites·5 claims
- 3639US2006208298A1Memory cell of dynamic random access memory and array structure thereofCHANG KO-HSING·Filed 2005·Application pending·0 cites
- 3739US2006231909A1Method of manufacturing an non-volatile memory deviceHSU HANN-JYE·Filed 2006·Application pending·0 cites
- 3838US2008035981A1One time programmable memory and the manufacturing method thereofCHANG KO-HSING·Filed 2006·Application pending·0 cites
- 3937US2006102948A1Method of fabricating flash memoryCHANG KO-HSING·Filed 2005·Application pending·0 cites
- 4035US2005145920A1Non-volatile memory and fabricating method thereofFiled 2003·Application pending·0 cites
- 4134US2007048961A1Semiconductor device and fabricating method thereofCHANG KO-HSING·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →