Inventor · disambiguated record
Kota Funayama
Also filed as: FUNAYAMA KOTA
37 granted patents·13 pending applications·863 citations·filing 1999–2024
98Inventor score
Files withSANDISK TECHNOLOGIES LLC22RENESAS ELECTRONICS CORP10RENESAS TECH CORP5FUNAYAMA KOTA4HITACHI LTD2
Top patents by PatentIndex Score
50 records- 0198US10224240B1Distortion reduction of memory openings in a multi-tier memory device through thermal cycle controlSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 5, 2019·45 cites·10 claims
- 0298US9754963B1Multi-tier memory stack structure containing two types of support pillar structuresSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 5, 2017·107 cites·24 claims
- 0398US9691781B1Vertical resistor in 3D memory device with two-tier stackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 27, 2017·39 cites·20 claims
- 0498US6090684AMethod for manufacturing semiconductor deviceHITACHI LTD·Filed 1999·Granted Jul 18, 2000·283 cites·3 claims
- 0597US9978766B1Three-dimensional memory device with electrically isolated support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 22, 2018·45 cites·26 claims
- 0697US9929174B1Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 27, 2018·38 cites·26 claims
- 0796US11367733B1Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
- 0896US10600802B2Multi-tier memory device with rounded top part of joint structure and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 24, 2020·14 cites·15 claims
- 0996US9780034B1Three-dimensional memory device containing annular etch-stop spacer and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·38 cites·4 claims
- 1095US7098478B2Semiconductor memory device using vertical-channel transistorsRENESAS TECH CORP·Filed 2005·Granted Aug 29, 2006·33 cites·20 claims
- 1195US6670642B2Semiconductor memory device using vertical-channel transistorsRENESAS TECH CORP·Filed 2002·Granted Dec 30, 2003·83 cites·23 claims
- 1294US9859363B2Self-aligned isolation dielectric structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 2, 2018·15 cites·31 claims
- 1391US10658377B2Three-dimensional memory device with reduced etch damage to memory films and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 19, 2020·8 cites·6 claims
- 1489US9443991B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 13, 2016·5 cites·7 claims
- 1589US8853036B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 7, 2014·7 cites·9 claims
- 1687US11444101B2Spacerless source contact layer replacement process and three-dimensional memory device formed by the processSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 13, 2022·2 cites·21 claims
- 1786US7348230B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Mar 25, 2008·38 cites·16 claims
- 1882US9941297B2Vertical resistor in 3D memory device with two-tier stackSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 10, 2018·3 cites·14 claims
- 1980US9379127B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·2 cites·8 claims
- 2078US9093546B2Method of manufacturing semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Jul 28, 2015·5 cites·7 claims
- 2177US8633530B2Semiconductor device and method of manufacturing the sameFUNAYAMA KOTA·Filed 2009·Granted Jan 21, 2014·5 cites·15 claims
- 2274US9324883B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 26, 2016·2 cites·6 claims
- 2373US8569144B2Method of manufacturing semiconductor integrated circuit deviceFUNAYAMA KOTA·Filed 2012·Granted Oct 29, 2013·3 cites·15 claims
- 2472US8133795B2Method of manufacturing semiconductor integrated circuit deviceFUNAYAMA KOTA·Filed 2010·Granted Mar 13, 2012·3 cites·10 claims
- 2571US8461642B2Semiconductor device having a nonvolatile memory cell with field effect transistorsHOMMA TAKURO·Filed 2009·Granted Jun 11, 2013·4 cites·9 claims
- 2671US6403446B1Method for manufacturing semiconductor deviceHITACHI LTD·Filed 2000·Granted Jun 11, 2002·13 cites·8 claims
- 2770US9356110B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Granted May 31, 2016·2 cites·18 claims
- 2865US6943373B2Semiconductor memory device using vertical-channel transistorsRENESAS TECH CORP·Filed 2003·Granted Sep 13, 2005·9 cites·18 claims
- 2964US2025294748A1Memory device containing non-integer average number of memory opening fill structures per columnSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3063US8969943B2Semiconductor device and manufacturing method of semiconductor deviceTOBA KOICHI·Filed 2011·Granted Mar 3, 2015·1 cites·19 claims
- 3162US2025234545A1Three-dimensional memory device including a p-i-n junction source contact structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3261US2025292833A1Memory device containing non-integer average number of memory opening fill structures per columnSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3360US12133388B2Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 29, 2024·0 cites·14 claims
- 3460US2025248034A1Three-dimensional memory device with a staircase isolation ridge and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3560US2025157966A1Bonding structures for high-density metal-to-metal bonding and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3659US2025169070A1Three-dimensional memory device including crack-resistant backside passivation structure and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3758US2024178140A1Three-dimensional memory device with self-aligned word line contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 3858US2024179916A1Three-dimensional memory device with self-aligned word line contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 3954US9093319B2Semiconductor device and manufacturing method thereofFUNAYAMA KOTA·Filed 2012·Granted Jul 28, 2015·1 cites·5 claims
- 4054US7045864B2Semiconductor integrated circuit deviceHITACHI ULSI SYS CO LTD·Filed 2002·Granted May 16, 2006·6 cites·5 claims
- 4154US2024196610A1Three-dimensional memory device with dielectric fins in staircase region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 4253US12394718B2Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 4353US2014209996A1Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4449US11756877B2Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 12, 2023·0 cites·19 claims
- 4548US7666728B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Feb 23, 2010·0 cites·30 claims
- 4643US9613971B2Select gates with central open areasSANDISK TECHNOLOGIES LLC·Filed 2015·Granted Apr 4, 2017·0 cites·16 claims
- 4743US9564540B2Method of manufacturing semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Feb 7, 2017·0 cites·11 claims
- 4843US2014353740A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4941US2015325583A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 5033US2017025426A1Select Gates with Conductive Strips on SidesSANDISK TECHNOLOGIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →