Inventor · disambiguated record
Kota V. R. M. Murali
Also filed as: MURALI KOTA V R M
26 granted patents·1 pending application·80 citations·filing 2011–2017
95Inventor score
Top patents by PatentIndex Score
27 records- 0192US9379253B1Symmetric tunnel field effect transistorIBM·Filed 2015·Granted Jun 28, 2016·6 cites·17 claims
- 0290US9654414B2Scheduling cost efficient datacenter load distributionIBM·Filed 2014·Granted May 16, 2017·15 cites·20 claims
- 0390US9389632B2Energy efficient solar powered high voltage direct current based data centerIBM·Filed 2013·Granted Jul 12, 2016·12 cites·8 claims
- 0490US8896035B2Field effect transistor having phase transition material incorporated into one or more components for reduced leakage currentIBM·Filed 2012·Granted Nov 25, 2014·15 cites·10 claims
- 0589US9613867B2Symmetric tunnel field effect transistorIBM·Filed 2016·Granted Apr 4, 2017·4 cites·11 claims
- 0688US9589635B2Semiconductor device with a stoichiometric gradientIBM·Filed 2014·Granted Mar 7, 2017·6 cites·20 claims
- 0787US9419115B2Junctionless tunnel fet with metal-insulator transition materialIBM·Filed 2015·Granted Aug 16, 2016·5 cites·11 claims
- 0885US10373942B2Logic layout with reduced area and method of making the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 6, 2019·5 cites·10 claims
- 0983US9876084B2Symmetric tunnel field effect transistorIBM·Filed 2016·Granted Jan 23, 2018·2 cites·8 claims
- 1076US9911598B2Symmetric tunnel field effect transistorIBM·Filed 2017·Granted Mar 6, 2018·1 cites·9 claims
- 1175US9170165B2Workfunction modulation-based sensor to measure pressure and temperatureIBM·Filed 2013·Granted Oct 27, 2015·2 cites·20 claims
- 1270US9671810B2Energy efficient solar powered high voltage direct current based data centerIBM·Filed 2012·Granted Jun 6, 2017·3 cites·13 claims
- 1364US9705021B2Aerodynamic solar podsIBM·Filed 2014·Granted Jul 11, 2017·0 cites·12 claims
- 1463US10164027B2Symmetric tunnel field effect transistorIBM·Filed 2017·Granted Dec 25, 2018·0 cites·9 claims
- 1563US10163716B2Symmetric tunnel field effect transistorIBM·Filed 2017·Granted Dec 25, 2018·0 cites·13 claims
- 1663US9419016B2Junctionless tunnel FET with metal-insulator transition materialIBM·Filed 2014·Granted Aug 16, 2016·1 cites·20 claims
- 1763US8450792B2Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)BAJAJ MOHIT·Filed 2011·Granted May 28, 2013·2 cites·20 claims
- 1862US10418505B2Aerodynamic solar podsIBM·Filed 2017·Granted Sep 17, 2019·0 cites·20 claims
- 1959US9105498B2Gate strain induced work function engineeringBAJAJ MOHIT·Filed 2012·Granted Aug 11, 2015·1 cites·18 claims
- 2057US9705079B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jul 11, 2017·0 cites·1 claims
- 2156US9680096B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jun 13, 2017·0 cites·1 claims
- 2255US9508930B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Nov 29, 2016·0 cites·1 claims
- 2353US9647210B2Tunable voltage margin access diodesIBM·Filed 2015·Granted May 9, 2017·0 cites·17 claims
- 2452US9070579B2Gate strain induced work function engineeringIBM·Filed 2014·Granted Jun 30, 2015·0 cites·16 claims
- 2548US9552852B2Doped metal-insulator-transition latch circuitryGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 24, 2017·0 cites·20 claims
- 2645US9068882B2Low power thermal imagerIBM·Filed 2013·Granted Jun 30, 2015·0 cites·18 claims
- 2738US2013087856A1Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS GateORTOLLAND CLAUDE·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →