Inventor · disambiguated record
Konrad Seidel
Also filed as: SEIDEL KONRAD
13 granted patents·5 pending applications·46 citations·filing 2005–2023
87Inventor score
Files withFRAUNHOFER GES FORSCHUNG6GLOBALFOUNDRIES DRESDEN MOD 13INFINEON TECHNOLOGIES FLASH GM3QIMONDA AG2GLOBALFOUNDRIES INC1
Top patents by PatentIndex Score
18 records- 0188US9318315B2Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materialsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 19, 2016·13 cites·23 claims
- 0281US7564718B2Method for programming a block of memory cells, non-volatile memory device and memory card deviceINFINEON TECHNOLOGIES FLASH GM·Filed 2006·Granted Jul 21, 2009·16 cites·11 claims
- 0364US11018146B2Integrated electronic circuit comprising a first transistor and a ferroelectric capacitorFRAUNHOFER GES FORSCHUNG·Filed 2019·Granted May 25, 2021·0 cites·9 claims
- 0462US11637111B2Integrated electronic circuit and method of making comprising a first transistor and a ferroelectric capacitorFRAUNHOFER GES FORSCHUNG·Filed 2021·Granted Apr 25, 2023·0 cites·8 claims
- 0561US7864593B2Method for classifying memory cells in an integrated circuitQIMONDA AG·Filed 2007·Granted Jan 4, 2011·5 cites·27 claims
- 0661US7190605B1Semiconductor memory and method for operating a semiconductor memory comprising a plurality of memory cellsINFINEON TECHNOLOGIES FLASH GM·Filed 2005·Granted Mar 13, 2007·5 cites·20 claims
- 0754US7489563B2Memory device with adaptive sense unit and method of reading a cell arrayQIMONDA FLASH GMBH & CO KG·Filed 2007·Granted Feb 10, 2009·5 cites·37 claims
- 0848US11121266B2Voltage-controllable capacitor comprising a ferroelectric layer and method for producing the voltage-controllable capacitor comprising a ferroelectric layerFRAUNHOFER GES FORSCHUNG·Filed 2019·Granted Sep 14, 2021·0 cites·9 claims
- 0948US2023200085A1Electronic component with at least one layer of a ferroelectric or antiferroelectric materialFRAUNHOFER GES FORSCHUNG·Filed 2022·Application pending·0 cites
- 1047US2024145572A1Structural element with improved ferroelectric polarisation switching and reliability and method for producing said structral elementFRAUNHOFER GES FORSCHUNG·Filed 2023·Application pending·0 cites
- 1146US11869563B2Memory circuits employing source-line and/or bit-line-applied variable programming assist voltagesGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2021·Granted Jan 9, 2024·0 cites·18 claims
- 1245US11889701B2Memory cell including polarization retention member(s) including antiferroelectric layer over ferroelectric layerGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 1345US11398568B2Ferroelectric based transistorsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 1445US7342829B2Memory device and method for operating a memory deviceINFINEON TECHNOLOGIES FLASH GM·Filed 2005·Granted Mar 11, 2008·2 cites·27 claims
- 1543US2023013976A1Movable piezo element and method for producing a movable piezo elementFRAUNHOFER GES FORSCHUNG·Filed 2020·Application pending·0 cites
- 1630US7903480B2Integrated circuit, and method for transferring dataQIMONDA AG·Filed 2008·Granted Mar 8, 2011·0 cites·13 claims
- 1729US2007230261A1Nonvolatile semiconductor memory device and method for testing the sameHAUFE JUERG·Filed 2006·Application pending·0 cites
- 1822US2008049512A1Nonvolatile memory device and method of programming the sameSEIDEL KONRAD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →