Inventor · disambiguated record
Kosei Sugawara
Also filed as: SUGAWARA KOSEI
9 granted patents·7 pending applications·3 citations·filing 2009–2023
75Inventor score
Files withSHINETSU HANDOTAI KK8SHIN ETSU HANDOTAI CO LTD3SUGAWARA KOSEI3HOSHI RYOJI1SHIMADA TOSHIRO1
Top patents by PatentIndex Score
16 records- 0181US8885915B2Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystalSUGAWARA KOSEI·Filed 2011·Granted Nov 11, 2014·3 cites·30 claims
- 0268US11053606B2Method of producing silicon single crystal, and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2017·Granted Jul 6, 2021·0 cites·4 claims
- 0367US2021189589A1Silicon single crystal and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 0464US12084788B2Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impuritiesSHINETSU HANDOTAI KK·Filed 2020·Granted Sep 10, 2024·0 cites·12 claims
- 0554US2025273587A1Substrate for electronic device and method for producing the sameSHIN ETSU HANDOTAI CO LTD·Filed 2023·Application pending·0 cites
- 0653US12188153B2Single-crystal pulling apparatus with saddle-shaped superconducting coils and single-crystal pulling methodSHINETSU HANDOTAI KK·Filed 2021·Granted Jan 7, 2025·0 cites·6 claims
- 0753US2025031421A1Substrate for electronic device and method for producing the sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 0852US9650725B2Method for manufacturing a defect-controlled low-oxygen concentration silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2013·Granted May 16, 2017·0 cites·11 claims
- 0951US2024263342A1Apparatus for manufacturing single crystalSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1050US12227872B2Single-crystal pulling apparatus and single-crystal pulling methodSHIN ETSU HANDOTAI CO LTD·Filed 2020·Granted Feb 18, 2025·0 cites·10 claims
- 1148US8083852B2Single crystal growth method and single crystal pulling apparatusSUGAWARA KOSEI·Filed 2009·Granted Dec 27, 2011·0 cites·24 claims
- 1248US2024355620A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1343US2013247815A1Single crystal production apparatus and method for producing single crystalSUGAWARA KOSEI·Filed 2012·Application pending·0 cites
- 1442US9783912B2Silicon single crystal growing apparatus and method for growing silicon single crystalSHINETSU HANDOTAI KK·Filed 2013·Granted Oct 10, 2017·0 cites·8 claims
- 1542US8858706B2Single-crystal manufacturing apparatus and single-crystal manufacturing methodSHIMADA TOSHIRO·Filed 2010·Granted Oct 14, 2014·0 cites·10 claims
- 1635US2013323153A1Silicon single crystal waferHOSHI RYOJI·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →