Inventor · disambiguated record
Koichi Tachibana
Also filed as: TACHIBANA KOICHI
61 granted patents·11 pending applications·144 citations·filing 2005–2015
98Inventor score
Top patents by PatentIndex Score
72 records- 0195US8648381B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Feb 11, 2014·10 cites·17 claims
- 0294US9590141B2Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurityTOSHIBA KK·Filed 2015·Granted Mar 7, 2017·7 cites·16 claims
- 0392US8525203B2Semiconductor light emitting deviceTACHIBANA KOICHI·Filed 2010·Granted Sep 3, 2013·8 cites·58 claims
- 0489US8455917B2Nitride semiconductor light emitting deviceNAGO HAJIME·Filed 2011·Granted Jun 4, 2013·9 cites·8 claims
- 0588US8564006B2Nitride semiconductor device and nitride semiconductor layer growth substrateTACHIBANA KOICHI·Filed 2012·Granted Oct 22, 2013·10 cites·20 claims
- 0686US8643044B2Semiconductor light emitting deviceTACHIBANA KOICHI·Filed 2011·Granted Feb 4, 2014·5 cites·21 claims
- 0785US9048362B2Semiconductor light emitting deviceKIMURA SHIGEYA·Filed 2012·Granted Jun 2, 2015·4 cites·14 claims
- 0885US7498618B2Nitride semiconductor deviceTOSHIBA KK·Filed 2006·Granted Mar 3, 2009·13 cites·19 claims
- 0984US8674338B2Semiconductor light emitting deviceTACHIBANA KOICHI·Filed 2010·Granted Mar 18, 2014·4 cites·21 claims
- 1084US7397069B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jul 8, 2008·6 cites·13 claims
- 1183US8680508B2Semiconductor light emitting device and method for manufacturing sameHIKOSAKA TOSHIKI·Filed 2011·Granted Mar 25, 2014·3 cites·20 claims
- 1282US8658450B2Crystal growth method and semiconductor light emitting deviceNAGO HAJIME·Filed 2010·Granted Feb 25, 2014·5 cites·22 claims
- 1380US7781958B2Light emitting deviceTOSHIBA KK·Filed 2007·Granted Aug 24, 2010·10 cites·19 claims
- 1478US8093083B1Method for manufacturing a semiconductor light emitting deviceHIKOSAKA TOSHIKI·Filed 2011·Granted Jan 10, 2012·4 cites·20 claims
- 1578US8035524B2RFID tag mounting package and manufacturing method thereofHITACHI LTD·Filed 2008·Granted Oct 11, 2011·8 cites·23 claims
- 1676US8815717B2Vapor deposition method and vapor deposition apparatusHARADA YOSHIYUKI·Filed 2010·Granted Aug 26, 2014·3 cites·16 claims
- 1776US7763907B2Semiconductor light emitting elementTOSHIBA KK·Filed 2007·Granted Jul 27, 2010·6 cites·16 claims
- 1875US7773648B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Aug 10, 2010·5 cites·22 claims
- 1974US8242532B2Semiconductor light-emitting deviceSATO TAISUKE·Filed 2010·Granted Aug 14, 2012·2 cites·6 claims
- 2073US8895956B2Semiconductor light emitting deviceKIMURA SHIGEYA·Filed 2011·Granted Nov 25, 2014·2 cites·20 claims
- 2173US8395263B2Semiconductor light emitting device and method for manufacturing the sameSATO TAISUKE·Filed 2011·Granted Mar 12, 2013·3 cites·19 claims
- 2272US7339255B2Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planesTOSHIBA KK·Filed 2005·Granted Mar 4, 2008·3 cites·22 claims
- 2371US8728237B2Crystal growth method for nitride semiconductor having a multiquantum well structureSHIODA TOMONARI·Filed 2010·Granted May 20, 2014·2 cites·7 claims
- 2471US7683390B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Mar 23, 2010·2 cites·13 claims
- 2569US8604496B2Optical semiconductor deviceSHIODA TOMONARI·Filed 2011·Granted Dec 10, 2013·1 cites·20 claims
- 2668US8729578B2Semiconductor light emitting device and method for manufacturing the sameTOSHIBA KK·Filed 2013·Granted May 20, 2014·1 cites·20 claims
- 2768US7915630B2Semiconductor light-emitting deviceTOSHIBA KK·Filed 2009·Granted Mar 29, 2011·4 cites·13 claims
- 2866US9035336B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted May 19, 2015·0 cites·10 claims
- 2966US8623683B2Method of fabricating a nitride semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Jan 7, 2014·1 cites·7 claims
- 3066US8525195B2Semiconductor light emitting deviceNAGO HAJIME·Filed 2010·Granted Sep 3, 2013·1 cites·19 claims
- 3165US9263631B2Semiconductor light emitting device and method for manufacturing sameTOSHIBA KK·Filed 2014·Granted Feb 16, 2016·0 cites·19 claims
- 3264US8987026B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted Mar 24, 2015·0 cites·19 claims
- 3364US8835904B2Semiconductor light emitting device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Sep 16, 2014·0 cites·10 claims
- 3464US8741686B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jun 3, 2014·0 cites·5 claims
- 3563US8901595B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Dec 2, 2014·0 cites·17 claims
- 3661US8952353B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted Feb 10, 2015·0 cites·6 claims
- 3761US8466477B2Semiconductor deviceTACHIBANA KOICHI·Filed 2012·Granted Jun 18, 2013·0 cites·15 claims
- 3861US7863637B2Semiconductor light emitting element, method for manufacturing the same, and light emitting deviceTOSHIBA KK·Filed 2008·Granted Jan 4, 2011·2 cites·9 claims
- 3960US9024293B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted May 5, 2015·0 cites·19 claims
- 4060US8835950B2Semiconductor deviceTACHIBANA KOICHI·Filed 2012·Granted Sep 16, 2014·0 cites·10 claims
- 4158US8963176B2Semiconductor light-emitting device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Feb 24, 2015·0 cites·10 claims
- 4257US9263632B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2015·Granted Feb 16, 2016·0 cites·18 claims
- 4357US9093609B2Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurityTOSHIBA KK·Filed 2014·Granted Jul 28, 2015·0 cites·16 claims
- 4456US9246055B2Crystal growth method and semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted Jan 26, 2016·0 cites·15 claims
- 4556US8878213B2Semiconductor light emitting deviceSUGIYAMA NAOHARU·Filed 2011·Granted Nov 4, 2014·0 cites·18 claims
- 4656US2010102296A1Semiconductor deviceTOSHIBA KK·Filed 2010·Application pending·0 cites
- 4755US8647905B2Semiconductor light emitting device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Feb 11, 2014·0 cites·13 claims
- 4855US7531397B2Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planesTOSHIBA KK·Filed 2008·Granted May 12, 2009·0 cites·22 claims
- 4955US2015349199A1Semiconductor light emitting device and waferTOSHIBA KK·Filed 2015·Application pending·0 cites
- 5054US9142717B2Semiconductor light emitting device and waferTACHIBANA KOICHI·Filed 2011·Granted Sep 22, 2015·0 cites·12 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →