Inventor · disambiguated record
Kristy A. Campbell
Also filed as: CAMPBELL KRISTY A · CAMPBELL KRISTY ANSTETT
128 granted patents·12 pending applications·2,274 citations·filing 2001–2020
99Inventor score
Files withMICRON TECHNOLOGY INC99CAMPBELL KRISTY A16UNIV BOISE STATE8DALEY JON4OVONYX MEMORY TECH LLC3
Top patents by PatentIndex Score
140 records- 0197US7365411B2Resistance variable memory with temperature tolerant materialsMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 29, 2008·93 cites·11 claims
- 0297US7332735B2Phase change memory cell and method of formationMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 19, 2008·58 cites·39 claims
- 0397US7151273B2Silver-selenide/chalcogenide glass stack for resistance variable memoryMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 19, 2006·102 cites·96 claims
- 0496US6867996B2Single-polarity programmable resistance-variable memory elementMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 15, 2005·94 cites·90 claims
- 0595US6955940B2Method of forming chalcogenide comprising devicesMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 18, 2005·68 cites·26 claims
- 0694US7220982B2Amorphous carbon-based non-volatile memoryMICRON TECHNOLOGY INC·Filed 2004·Granted May 22, 2007·61 cites·44 claims
- 0794US6930909B2Memory device and methods of controlling resistance variation and resistance profile driftMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 16, 2005·83 cites·96 claims
- 0893US9224948B2Resistance variable memory device with nanoparticle electrode and method of fabricationMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 29, 2015·6 cites·9 claims
- 0993US7924608B2Forced ion migration for chalcogenide phase change memory deviceUNIV BOISE STATE·Filed 2007·Granted Apr 12, 2011·36 cites·20 claims
- 1093US7709885B2Access transistor for memory deviceMICRON TECHNOLOGY INC·Filed 2007·Granted May 4, 2010·20 cites·9 claims
- 1193US7619247B2Structure for amorphous carbon based non-volatile memoryMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 17, 2009·22 cites·31 claims
- 1293US7491962B2Resistance variable memory device with nanoparticle electrode and method of fabricationMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 17, 2009·17 cites·28 claims
- 1393US7344946B2Structure for amorphous carbon based non-volatile memoryMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 18, 2008·24 cites·36 claims
- 1493US6881623B2Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 19, 2005·64 cites·28 claims
- 1593US6849868B2Methods and apparatus for resistance variable material cellsMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 1, 2005·57 cites·12 claims
- 1692US7663137B2Phase change memory cell and method of formationMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 16, 2010·19 cites·18 claims
- 1792US7518212B2Graded GexSe100-x concentration in PCRAMMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 14, 2009·19 cites·25 claims
- 1891US8878155B2Resistance variable memory device with nanoparticle electrode and method of fabricationLIU JUN·Filed 2011·Granted Nov 4, 2014·5 cites·33 claims
- 1991US7659205B2Amorphous carbon-based non-volatile memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 9, 2010·18 cites·43 claims
- 2091US7586777B2Resistance variable memory with temperature tolerant materialsMICRON TECHNOLOGY INC·Filed 2008·Granted Sep 8, 2009·14 cites·15 claims
- 2191US7433227B2Resistance variable memory device with sputtered metal-chalcogenide region and method of fabricationMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 7, 2008·14 cites·13 claims
- 2291US6961277B2Method of refreshing a PCRAM memory deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 1, 2005·52 cites·23 claims
- 2391US6888155B2Stoichiometry for chalcogenide glasses useful for memory devices and method of formationMICRON TECHNOLOGY INC·Filed 2003·Granted May 3, 2005·45 cites·20 claims
- 2491US6864521B2Method to control silver concentration in a resistance variable memory elementMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 8, 2005·35 cites·73 claims
- 2590US7723713B2Layered resistance variable memory device and method of fabricationMICRON TECHNOLOGY INC·Filed 2006·Granted May 25, 2010·14 cites·7 claims
- 2690US7646007B2Silver-selenide/chalcogenide glass stack for resistance variable memoryMICRON TECHNOLOGY INC·Filed 2006·Granted Jan 12, 2010·15 cites·37 claims
- 2790US7317567B2Method and apparatus for providing color changing thin film materialMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 8, 2008·12 cites·27 claims
- 2890US6867114B2Methods to form a memory cell with metal-rich metal chalcogenideMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 15, 2005·40 cites·9 claims
- 2990US6856002B2Graded GexSe100-x concentration in PCRAMMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 15, 2005·36 cites·25 claims
- 3090US6646902B2Method of retaining memory state in a programmable conductor RAMMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 11, 2003·46 cites·111 claims
- 3189US9583703B2Tunable variable resistance memory deviceUNIV BOISE STATE·Filed 2015·Granted Feb 28, 2017·6 cites·25 claims
- 3289US7701760B2Resistance variable memory device with sputtered metal-chalcogenide region and method of fabricationMICRON TECHNOLOGY INC·Filed 2008·Granted Apr 20, 2010·13 cites·20 claims
- 3389US7692177B2Resistance variable memory element and its method of formationMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 6, 2010·7 cites·16 claims
- 3489US7393798B2Resistance variable memory with temperature tolerant materialsMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 1, 2008·21 cites·14 claims
- 3589US7315465B2Methods of operating and forming chalcogenide glass constant current devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 1, 2008·12 cites·31 claims
- 3689US7087454B2Fabrication of single polarity programmable resistance structureMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 8, 2006·41 cites·26 claims
- 3789US6784018B2Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 31, 2004·36 cites·51 claims
- 3888US7387909B2Methods of forming assemblies displaying differential negative resistanceMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 17, 2008·11 cites·24 claims
- 3988US7385868B2Method of refreshing a PCRAM memory deviceMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 10, 2008·16 cites·17 claims
- 4088US7348205B2Method of forming resistance variable devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 25, 2008·13 cites·52 claims
- 4188US7326950B2Memory device with switching glass layerMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 5, 2008·15 cites·10 claims
- 4288US7274034B2Resistance variable memory device with sputtered metal-chalcogenide region and method of fabricationMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 25, 2007·12 cites·23 claims
- 4388US7050327B2Differential negative resistance memoryMICRON TECHNOLOGY INC·Filed 2003·Granted May 23, 2006·33 cites·50 claims
- 4488US6891749B2Resistance variable ‘on ’ memoryMICRON TECHNOLOGY INC·Filed 2002·Granted May 10, 2005·44 cites·77 claims
- 4587US10084130B2Resistance variable memory device with nanoparticle electrode and method of fabricationOVONYX MEMORY TECH LLC·Filed 2015·Granted Sep 25, 2018·3 cites·18 claims
- 4687US8467236B2Continuously variable resistorCAMPBELL KRISTY A·Filed 2010·Granted Jun 18, 2013·11 cites·16 claims
- 4787US7396699B2Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitryMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 8, 2008·12 cites·23 claims
- 4887US7348209B2Resistance variable memory device and method of fabricationMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 25, 2008·12 cites·47 claims
- 4987US7277313B2Resistance variable memory element with threshold device and method of forming the sameMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 2, 2007·16 cites·38 claims
- 5087US6953720B2Methods for forming chalcogenide glass-based memory elementsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 11, 2005·27 cites·45 claims
Showing the top 50 of 140 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →