Inventor · disambiguated record
Kuo-Ji Chen
Also filed as: CHEN KUO-JI
82 granted patents·23 pending applications·307 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD78TAIWAN SEMICONDUCTOR MFG12CHEN KUO-JI4Ma wei yu2WANG WEN-HAN2
Top patents by PatentIndex Score
105 records- 0199US11158634B1Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·11 cites·20 claims
- 0298US11670941B2Single-gate-oxide power inverter and electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 6, 2023·3 cites·20 claims
- 0397US9035393B2Method and apparatus for forming an integrated circuit with a metalized resistor in a standard cell configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 19, 2015·32 cites·20 claims
- 0496US11735587B2Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 0595US11848554B2Electrostatic discharge circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·2 cites·20 claims
- 0694US9608616B1Power clamp circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 28, 2017·10 cites·20 claims
- 0794US9117677B2Semiconductor integrated circuit having a resistor and method of forming the sameMa wei yu·Filed 2011·Granted Aug 25, 2015·24 cites·20 claims
- 0894US8743515B2ESD clamp with novel RC triggered circuitYANG TZU-YI·Filed 2012·Granted Jun 3, 2014·17 cites·20 claims
- 0993US11374403B2Single-gate-oxide power inverter and electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·2 cites·20 claims
- 1092US11646313B2Semiconductor and circuit structures, and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·2 cites·20 claims
- 1191US10872190B2Method and system for latch-up preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·5 cites·20 claims
- 1290US11569223B2Integrated circuit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
- 1390US9184586B2SiGe based gate driven PMOS trigger circuitWANG WEN-HAN·Filed 2012·Granted Nov 10, 2015·16 cites·21 claims
- 1489US12009657B2ESD clamp circuit for low leakage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
- 1589US11239255B1Integrated circuit with active region jogsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·2 cites·20 claims
- 1688US10931103B2Single-gate-oxide power inverter and electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·4 cites·20 claims
- 1788US9082886B2Adding decoupling function for tap cellsCHEN KUO-JI·Filed 2011·Granted Jul 14, 2015·9 cites·20 claims
- 1888US8179647B2ESD power clamp for high-voltage applicationsCHU FANG-TSUN·Filed 2010·Granted May 15, 2012·11 cites·16 claims
- 1985US9406815B2Adding decoupling function for TAP cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·4 cites·20 claims
- 2085US8943454B1In-phase grouping for voltage-dependent design ruleTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·10 cites·18 claims
- 2185US2025142950A1Backside pn junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2284US9178008B2Metal-insulator-metal capacitor with current leakage protectionCHEN KUO-JI·Filed 2012·Granted Nov 3, 2015·6 cites·20 claims
- 2384US2024387412A1Semiconductor device including dummy conductive cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2483US12183736B2Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2583US11855076B2Electrostatic discharge (ESD) array with back end of line (BEOL) connection in a carrier waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 2683US8059376B2ESD clamp for high voltage operationCHEN KUO-JI·Filed 2010·Granted Nov 15, 2011·6 cites·19 claims
- 2783US7173472B2Input buffer structure with single gate oxideTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 6, 2007·27 cites·23 claims
- 2883US2024387509A1Three-dimensional integrated circuit having esd protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2982US12471326B2Guard ring and circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·4 claims
- 3082US12176341B2Electrostatic discharge (ESD) array with back end of line (BEOL) connection in a carrier waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3182US11973075B2Dual substrate side ESD diode for high speed circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·1 cites·20 claims
- 3282US2024386180A1Method and system for latch-up preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3381US2025286367A1Electrostatic discharge circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3480US12412019B2Method and system for latch-up preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 3580US12322959B2Electrostatic discharge circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 3680US2025089379A1Electrostatic discharge (esd) array with back end of line (beol) connection in a carrier waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3779US12033962B2Electrostatic discharge (ESD) array with circuit controlled switchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 3879US11935885B2Device including integrated electrostatic discharge protection componentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 3979US9450044B2Guard ring structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·2 cites·20 claims
- 4079US2024387554A1Integrated circuit device manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4179US2025323498A1Self-Biasing ESD Power ClampTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4279US2025359347A1Integrated circuit device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4378US12362557B2Self-biasing ESD power clampTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 4478US9478533B2Method and apparatus for forming an integrated circuit with a metalized resistor in a standard cell configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·2 cites·20 claims
- 4578US7151391B2Integrated circuit for level-shifting voltage levelsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 19, 2006·20 cites·14 claims
- 4677US9026973B2System and method for arbitrary metal spacing for self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 5, 2015·4 cites·15 claims
- 4777US2024321781A1Electrostatic discharge (esd) array with circuit controlled switchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4876US12408429B2Integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 4976US7193441B2Single gate oxide I/O buffer with improved under-drive featureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 20, 2007·18 cites·33 claims
- 5075US12272691B2Semiconductor and circuit structures, and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →