Inventor · disambiguated record

Kun-Tsang Chuang

Also filed as: CHUANG KUN-TSANG

56 granted patents·8 pending applications·68 citations·filing 2012–2025

97Inventor score

Technology areasH10P H10W H10D H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD63 HSIEH PING-PANG1

Top patents by PatentIndex Score

64 records

0197US11462642B2Source/drain epitaxial layer profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·3 cites·20 claims
0297US11367778B2MOSFET device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
0397US11335638B2Reducing RC delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·5 cites·20 claims
0496US12027581B2Semiconductor device with air-void in spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
0595US11211283B2Method for forming a bulk semiconductor substrate configured to exhibit soi behaviorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·3 cites·20 claims
0695US10790391B2Source/drain epitaxial layer profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·7 cites·20 claims
0794US11887987B2Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
0894US11817345B2Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
0994US10546937B2Structures and methods for noise isolation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·8 cites·20 claims
1093US11942547B2Source/drain epitaxial layer profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
1191US11804439B2Reducing RC delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
1291US2025365949A1Semiconductor device having non-continuous wall structure surrounding stacked gate structure including conductive layer disposed between segmented portions of the wall structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1390US11430733B2Method of testing waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
1490US11404537B2Semiconductor device with air-void in spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
1590US2025351530A1Mosfet device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1687US12464714B2Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
1787US10672795B2Bulk semiconductor substrate configured to exhibit semiconductor-on-insulator behaviorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·4 cites·20 claims
1887US10163641B2Memory with a raised dummy feature surrounding a cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
1985US12446289B2MOSFET device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
2084US11476157B2Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance due to reduction of off-state capacitance of back-end-of-line (BEOL) features of the MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·1 cites·8 claims
2184US10818595B2Semiconductor structure, testing and fabricating methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 27, 2020·3 cites·15 claims
2283US12302637B2Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
2383US11417749B2Semiconductor arrangement with airgap and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 16, 2022·2 cites·20 claims
2483US9728543B1Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 8, 2017·4 cites·20 claims
2583US2024379563A1Reducing rc delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2683US2025324725A1Semiconductor arrangement with airgap and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2782US12230574B2Reducing RC delay in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
2881US2025248118A1Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2980US2025126833A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3080US2025096038A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3179US10886165B2Method of forming negatively sloped isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
3278US12199181B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
3378US11855170B2MOSFET device structure with air-gaps in spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
3478US2024321954A1Semiconductor device with air-void in spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3576US12402389B2Semiconductor arrangement with airgap and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
3676US12009302B2Method of testing waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
3775US12191196B2Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
3874US9825046B2Flash memory device having high coupling ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·2 cites·19 claims
3973US11183570B2Structures and methods for noise isolation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·1 cites·20 claims
4072US11594449B2Method of making a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
4172US9947759B1Semiconductor device having milti-height structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
4271US11925017B2Semiconductor device having a wall structure surrounding a stacked gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·20 claims
4368US11348944B2Semiconductor wafer with devices having different top layer thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
4467US12211934B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
4565US11264456B2Isolation regions for reduced junction leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
4664US12507433B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
4761US11121141B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
4861US10636695B2Negatively sloped isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
4960US11145539B2Shallow trench isolation for integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
5059US11398403B2Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims

Showing the top 50 of 64 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →