Inventor · disambiguated record
Kuo-Bin Huang
Also filed as: HUANG KUO-BIN
83 granted patents·28 pending applications·125 citations·filing 2002–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD100TAIWAN SEMICONDUCTOR MFG5HUANG KUO BIN3YU WEIBO2HSU YU-RUNG1
Top patents by PatentIndex Score
111 records- 0198US11600521B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·5 cites·20 claims
- 0297US11114436B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·4 cites·20 claims
- 0396US11189714B2Gate stack structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·3 cites·20 claims
- 0495US11557512B2Wet cleaning with tunable metal recess for via plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·3 cites·20 claims
- 0594US10283503B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·8 cites·20 claims
- 0694US10283417B1Self-protective layer formed on high-k dielectric layers with different materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·10 cites·20 claims
- 0794US10170317B1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·7 cites·20 claims
- 0892US10811320B2Footing removal in cut-metal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·6 cites·20 claims
- 0992US8119473B2High temperature anneal for aluminum surface protectionHUANG KUO BIN·Filed 2009·Granted Feb 21, 2012·30 cites·15 claims
- 1091US10490410B2Self-protective layer formed on high-K dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·4 cites·20 claims
- 1190US12046476B2Wet etching chemistry and method of forming semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·2 cites·20 claims
- 1290US10312106B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·5 cites·20 claims
- 1389US10699944B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·3 cites·20 claims
- 1489US10179878B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·5 cites·20 claims
- 1588US11488857B2Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 1688US2025300008A1Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1787US12347724B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1887US11158726B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·3 cites·20 claims
- 1987US10748898B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·20 claims
- 2087US10483108B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·3 cites·20 claims
- 2186US12188686B2Air curtain device and workpiece processing toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·1 cites·20 claims
- 2285US2025300009A1Wet Cleaning with Tunable Metal Recess for Via PlugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2385US2025366051A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2484US12376372B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 2584US11942362B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 2684US11854903B2Footing removal in cut-metal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
- 2784US11378882B2Chemical composition for tri-layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 2884US10361133B2High-K metal gate and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·3 cites·20 claims
- 2984US2025056823A1Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3083US12176422B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3183US11923428B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·0 cites·20 claims
- 3283US11276571B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·1 cites·20 claims
- 3383US2024203740A1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3483US2024371688A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3582US2025336719A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3682US2024282575A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3781US12381081B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 3881US11424347B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·1 cites·20 claims
- 3981US2024186390A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4081US2025301765A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4180US11658225B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 23, 2023·0 cites·20 claims
- 4279US10676668B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 4378US12394669B2Wet cleaning with tunable metal recess for via plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 4478US12362189B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 4578US12136566B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 4678US12051619B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 4777US2024387709A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4877US2025331235A1Fin with profile controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4977US2024387182A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5076US11990339B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →