Inventor · disambiguated record
Kunihiko Iwamoto
Also filed as: IWAMOTO KUNIHIKO
15 granted patents·5 pending applications·51 citations·filing 2004–2024
90Inventor score
Top patents by PatentIndex Score
20 records- 0176US9082654B2Method of manufacturing non-volatile memory cell with simplified step of forming floating gateROHM CO LTD·Filed 2014·Granted Jul 14, 2015·3 cites·8 claims
- 0274US7372112B2Semiconductor device, process for producing the same and process for producing metal compound thin filmROHM CO LTD·Filed 2005·Granted May 13, 2008·5 cites·4 claims
- 0373US7772678B2Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygenROHM CO LTD·Filed 2008·Granted Aug 10, 2010·4 cites·2 claims
- 0473US7387686B2Film formation apparatusROHM CO LTD·Filed 2004·Granted Jun 17, 2008·16 cites·9 claims
- 0572US10566941B2Integrated circuit and method of manufacturing integrated circuitROHM CO LTD·Filed 2018·Granted Feb 18, 2020·2 cites·32 claims
- 0670US7419920B2Metal thin film and semiconductor comprising a metal thin filmHORIBA LTD·Filed 2005·Granted Sep 2, 2008·3 cites·4 claims
- 0768US8207584B2Semiconductor device and manufacturing method of the sameNABATAME TOSHIHIDE·Filed 2008·Granted Jun 26, 2012·4 cites·8 claims
- 0868US7790627B2Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin filmROHM CO LTD·Filed 2007·Granted Sep 7, 2010·3 cites·5 claims
- 0967US8367560B2Semiconductor device manufacturing methodHITACHI INT ELECTRIC INC·Filed 2008·Granted Feb 5, 2013·2 cites·18 claims
- 1066US7884423B2Semiconductor device and fabrication method thereofROHM CO LTD·Filed 2008·Granted Feb 8, 2011·2 cites·19 claims
- 1161US2024421198A1Semiconductor device and method of manufacturing sameROHM CO LTD·Filed 2024·Application pending·0 cites
- 1257US7482234B2Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphereROHM CO LTD·Filed 2004·Granted Jan 27, 2009·6 cites·4 claims
- 1356US7397094B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Jul 8, 2008·1 cites·16 claims
- 1454US10622443B2Semiconductor device with different material layers in element separation portion trench and method for manufacturing semiconductor deviceROHM CO LTD·Filed 2016·Granted Apr 14, 2020·0 cites·16 claims
- 1552US9425203B2Non-volatile memory cell in semiconductor deviceROHM CO LTD·Filed 2015·Granted Aug 23, 2016·0 cites·12 claims
- 1645US2008203499A1Semiconductor device having gate insulator including high-dielectric-constant materials and manufacture method of the sameROHM CO LTD·Filed 2008·Application pending·0 cites
- 1745US2008026148A1Film Forming System And Method For Forming FilmTOMINAGA KOJI·Filed 2004·Application pending·0 cites
- 1843US10554179B2Differential circuitROHM CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·28 claims
- 1940US2008067590A1Semiconductor device and manufacturing method of the sameNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 2033US2007077776A1Method for forming an insulating film in a semiconductor deviceKOJI TOMINAGA·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →