Inventor · disambiguated record
Kuk-Hwan Kim
Also filed as: KIM KUK-HWAN
122 granted patents·6 pending applications·2,079 citations·filing 2006–2024
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD34SPIN MEMORY INC30KIM KUK-HWAN21CROSSBAR INC11INTEGRATED SILICON SOLUTION CAYMAN INC7
Top patents by PatentIndex Score
128 records- 0199USD919589SElectronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 18, 2021·116 cites·1 claims
- 0299USD645435SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 20, 2011·320 cites·1 claims
- 0398US10171636B2Electronic device including displaySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·52 cites·17 claims
- 0498US9570683B1Three-dimensional two-terminal memory with enhanced electric field and segmented interconnectsCROSSBAR INC·Filed 2016·Granted Feb 14, 2017·185 cites·20 claims
- 0598US9564587B1Three-dimensional two-terminal memory with enhanced electric field and segmented interconnectsCROSSBAR INC·Filed 2014·Granted Feb 7, 2017·39 cites·30 claims
- 0697USD974318SElectronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 3, 2023·31 cites·1 claims
- 0797USD835597SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·23 cites·1 claims
- 0897US9093635B2Controlling on-state current for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Jul 28, 2015·24 cites·19 claims
- 0997USD654461SMobile phoneKIM KUK-HWAN·Filed 2011·Granted Feb 21, 2012·113 cites·1 claims
- 1097US8071972B2Silicon based nanoscale crossbar memoryLU WEI·Filed 2009·Granted Dec 6, 2011·92 cites·51 claims
- 1196US9727258B1Two-terminal memory compatibility with NAND flash memory set features type mechanismsCROSSBAR INC·Filed 2015·Granted Aug 8, 2017·22 cites·29 claims
- 1295USD974317SElectronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 3, 2023·22 cites·1 claims
- 1395US10333063B1Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymersSPIN MEMORY INC·Filed 2018·Granted Jun 25, 2019·6 cites·20 claims
- 1495USD734340SCase for electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 14, 2015·70 cites·1 claims
- 1595USD654047SMobile phoneKIM KUK-HWAN·Filed 2011·Granted Feb 14, 2012·78 cites·1 claims
- 1694USD771620SElectronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 15, 2016·63 cites·1 claims
- 1793USD862407SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 8, 2019·5 cites·1 claims
- 1893US10355045B1Three dimensional perpendicular magnetic junction with thin-film transistorSPIN MEMORY INC·Filed 2017·Granted Jul 16, 2019·9 cites·21 claims
- 1993US10192789B1Methods of fabricating dual threshold voltage devicesSPIN TRANSFER TECH·Filed 2018·Granted Jan 29, 2019·8 cites·25 claims
- 2093US9520561B1Controlling on-state current for two-terminal memoryCROSSBAR INC·Filed 2015·Granted Dec 13, 2016·10 cites·20 claims
- 2193US8569172B1Noble metal/non-noble metal electrode for RRAM applicationsJO SUNG HYUN·Filed 2012·Granted Oct 29, 2013·11 cites·21 claims
- 2293USD578985SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 21, 2008·52 cites·1 claims
- 2393USD576600SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 9, 2008·52 cites·1 claims
- 2492US10236075B1Predicting tunnel barrier endurance using redundant memory structuresSPIN TRANSFER TECH INC·Filed 2017·Granted Mar 19, 2019·12 cites·20 claims
- 2591US9735358B2Noble metal / non-noble metal electrode for RRAM applicationsCROSSBAR INC·Filed 2016·Granted Aug 15, 2017·6 cites·26 claims
- 2691USD687795SMobile terminalKIM KUK-HWAN·Filed 2012·Granted Aug 13, 2013·46 cites·1 claims
- 2791USD590793SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·44 cites·1 claims
- 2890US8008706B2Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cellsKOREA ADVANCED INST SCI & TECH·Filed 2008·Granted Aug 30, 2011·19 cites·20 claims
- 2989US10186551B1Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ)SPIN TRANSFER TECH INC·Filed 2018·Granted Jan 22, 2019·6 cites·14 claims
- 3089US9520557B2Silicon based nanoscale crossbar memoryUNIV MICHIGAN REGENTS·Filed 2015·Granted Dec 13, 2016·5 cites·20 claims
- 3189USD666573SMobile phoneKIM KUK-HWAN·Filed 2011·Granted Sep 4, 2012·40 cites·1 claims
- 3289US7741664B2Complementary metal oxide semiconductor image sensor and method for fabricating the sameKOREA ADVANCED INST SCI & TECH·Filed 2006·Granted Jun 22, 2010·16 cites·17 claims
- 3388US10658425B2Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channelsSPIN MEMORY INC·Filed 2018·Granted May 19, 2020·5 cites·12 claims
- 3487US10468293B2Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channelsSPIN MEMORY INC·Filed 2017·Granted Nov 5, 2019·5 cites·20 claims
- 3587US7749801B2Phase change memory device using carbon nanotube and method for fabricating the sameKOREA ADVANCED INST SCI & TECH·Filed 2006·Granted Jul 6, 2010·12 cites·13 claims
- 3686US10852909B2User interface provision method and electronic device for supporting sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 1, 2020·5 cites·15 claims
- 3786US10192787B1Methods of fabricating contacts for cylindrical devicesSPIN TRANSFER TECH·Filed 2018·Granted Jan 29, 2019·5 cites·15 claims
- 3886USD763252SElectronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·30 cites·1 claims
- 3986USD695247SMobile communication terminalKIM KUK-HWAN·Filed 2012·Granted Dec 10, 2013·35 cites·1 claims
- 4083US10192788B1Methods of fabricating dual threshold voltage devices with stacked gatesSPIN TRANSFER TECH·Filed 2018·Granted Jan 29, 2019·6 cites·18 claims
- 4183USD561154SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 5, 2008·28 cites·1 claims
- 4282US10192984B1Dual threshold voltage devices with stacked gatesSPIN TRANSFER TECH·Filed 2018·Granted Jan 29, 2019·6 cites·12 claims
- 4380US10629649B2Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistorSPIN MEMORY INC·Filed 2017·Granted Apr 21, 2020·3 cites·24 claims
- 4479US9269898B2Low temperature deposition for silicon-based conductive filmCROSSBAR INC·Filed 2014·Granted Feb 23, 2016·3 cites·20 claims
- 4578US10686009B2High density MRAM integrationSPIN MEMORY INC·Filed 2018·Granted Jun 16, 2020·1 cites·16 claims
- 4678USD563930SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 11, 2008·23 cites·1 claims
- 4777US10438999B2Annular vertical Si etched channel MOS devicesSPIN MEMORY INC·Filed 2017·Granted Oct 8, 2019·2 cites·8 claims
- 4875US10355047B1Fabrication methods of forming annular vertical SI etched channel MOS devicesSPIN MEMORY INC·Filed 2017·Granted Jul 16, 2019·2 cites·6 claims
- 4974US12069964B2Three dimensional perpendicular magnetic tunnel junction with thin film transistor arrayINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Aug 20, 2024·0 cites·14 claims
- 5074USD607857SMobile phoneSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·19 cites·1 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →