Inventor · disambiguated record
Kunihiko Kozaru
Also filed as: KOZARU KUNIHIKO
15 granted patents·323 citations·filing 1995–2003
94Inventor score
Top patents by PatentIndex Score
15 records- 0190US5991223ASynchronous semiconductor memory device operable in a burst modeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 23, 1999·86 cites·18 claims
- 0277US6026036ASynchronous semiconductor memory device having set up time of external address signal reducedMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 15, 2000·41 cites·7 claims
- 0376US6826066B2Semiconductor memory moduleRENESAS TECH CORP·Filed 2003·Granted Nov 30, 2004·23 cites·4 claims
- 0473US5539691ASemiconductor memory device and method for reading and writing data thereinMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 23, 1996·30 cites·7 claims
- 0567US5841961ASemiconductor memory device including a tag memoryMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 24, 1998·26 cites·13 claims
- 0667US5708599ASemiconductor memory device capable of reducing power consumptionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 13, 1998·26 cites·13 claims
- 0765US6728827B2Simply interfaced semiconductor integrated circuit device including logic circuitry and embedded memory circuitry operative with a reduced number of pin terminalsRENESAS TECH CORP·Filed 2001·Granted Apr 27, 2004·14 cites·26 claims
- 0859US5929539ASemiconductor memory device adaptable to external power supplies of different voltage levelsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 27, 1999·19 cites·7 claims
- 0953USRE36655ESemiconductor memory device and method for reading and writing data thereinMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 11, 2000·12 cites·8 claims
- 1049US5687111AStatic type semiconductor memory device capable of operating at a low voltage and reducing a memory cell areaMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 11, 1997·15 cites·6 claims
- 1144US5612917ASemiconductor memory device including improved redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 18, 1997·10 cites·8 claims
- 1242US6067597AWord configuration programmable semiconductor memory with multiple word configuration programming modeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 23, 2000·8 cites·5 claims
- 1339US6931482B2Semiconductor memory device internally provided with logic circuit which can be readily controlled and controlling method thereofRENESAS TECH CORP·Filed 2001·Granted Aug 16, 2005·2 cites·13 claims
- 1439US6269462B1Selectable sense amplifier delay circuit and methodMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 31, 2001·6 cites·11 claims
- 1537US5650978ASemiconductor memory device having data transition detecting functionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 22, 1997·5 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →