Inventor · disambiguated record
Kun-Chi Lin
Also filed as: LIN KUN · LIN KUN-CHI
43 granted patents·3 pending applications·381 citations·filing 1996–2022
98Inventor score
Files withUNITED MICROELECTRONICS CORP36DELTA ELECTRONICS INC6JOHNSON CONTROLS AIR CONDITIONING AND REFRIGERATION WUXI CO LTD1UNITED MICROELECTONICS CORP1
Top patents by PatentIndex Score
46 records- 0183US6100014AMethod of forming an opening in a dielectric layer through a photoresist layer with silylated sidewall spacersUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 8, 2000·51 cites·11 claims
- 0276US7339391B2Defect detection methodUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 4, 2008·7 cites·10 claims
- 0374US6417065B1Method of fabricating a bottom electrodeUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 9, 2002·21 cites·20 claims
- 0473US6432772B1Method of forming a lower storage node of a capacitorUNITED MICROELECTRONICS CORP·Filed 2001·Granted Aug 13, 2002·19 cites·9 claims
- 0572US7173833B2Energy efficient power supply device and operating method thereofDELTA ELECTRONICS INC·Filed 2005·Granted Feb 6, 2007·12 cites·18 claims
- 0667US6570246B1Multi-die packageUNITED MICROELECTRONICS CORP·Filed 2002·Granted May 27, 2003·13 cites·18 claims
- 0763US9812876B2Wall socket with load detecting circuitDELTA ELECTRONICS INC·Filed 2016·Granted Nov 7, 2017·1 cites·20 claims
- 0862US6429135B1Method of reducing stress between a nitride silicon spacer and a substrateUNITED MICROELECTRONICS CORP·Filed 2001·Granted Aug 6, 2002·10 cites·10 claims
- 0961US6100158AMethod of manufacturing an alignment mark with an etched back dielectric layer and a transparent dielectric layer and a device region on a higher plane with a wiring layer and an isolation regionUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 8, 2000·27 cites·13 claims
- 1060US6465360B2Method for fabricating an ultra small openingUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 15, 2002·8 cites·27 claims
- 1159US6413832B1Method for forming inner-cylindrical capacitor without top electrode maskUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jul 2, 2002·8 cites·22 claims
- 1259US6365454B1Cylindrical capacitor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 2, 2002·8 cites·10 claims
- 1357US9450507B2Power supply apparatus with input voltage detection and method of operating the sameDELTA ELECTRONICS INC·Filed 2014·Granted Sep 20, 2016·2 cites·8 claims
- 1457US6365955B1Cylindrical capacitor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 2, 2002·7 cites·10 claims
- 1554US10630185B2Power delivery device and control method thereofDELTA ELECTRONICS INC·Filed 2018·Granted Apr 21, 2020·0 cites·16 claims
- 1654US6329244B1Method of manufacturing dynamic random access memory cellUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 11, 2001·6 cites·18 claims
- 1754US6297139B1Method of forming a contact hole in a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 2, 2001·6 cites·18 claims
- 1852US6479355B2Method for forming landing padUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 12, 2002·5 cites·14 claims
- 1951US6124161AMethod for fabricating a hemispherical silicon grain layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 26, 2000·12 cites·20 claims
- 2050US10044275B2Power delivery device and control method thereofDELTA ELECTRONICS INC·Filed 2016·Granted Aug 7, 2018·0 cites·20 claims
- 2150US6667234B2Method of fabricating node contactsUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 23, 2003·4 cites·18 claims
- 2249US6238974B1Method of forming DRAM capacitors with a native oxide etch-stopUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 29, 2001·16 cites·9 claims
- 2349US6140168AMethod of fabricating self-aligned contact windowUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 31, 2000·15 cites·12 claims
- 2445US6150223AMethod for forming gate spacers with different widthsUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·16 cites·12 claims
- 2545US6074955AMethod of fabricating a node contact window of DRAMUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 13, 2000·11 cites·11 claims
- 2645US5861333AMethod of tunnel window process for EEPROM cell technologyUNITED MICROELECTONICS CORP·Filed 1996·Granted Jan 19, 1999·10 cites·23 claims
- 2744US6316341B1Method for cell pass transistor design in DRAM processUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 13, 2001·2 cites·10 claims
- 2844US6200904B1Method of forming a contact hole of a DRAMUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 13, 2001·12 cites·8 claims
- 2943US6255229B1Method for forming semiconductor dielectric layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 3, 2001·10 cites·12 claims
- 3042US8018211B2Output voltage detecting circuit and switching power supply having such output voltage detecting circuitDELTA ELECTRONICS INC·Filed 2009·Granted Sep 13, 2011·0 cites·20 claims
- 3142US6218271B1Method of forming a landing pad on the drain and source of a MOS transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 17, 2001·7 cites·10 claims
- 3241US6096594AFabricating method of a dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 1, 2000·6 cites·31 claims
- 3341US2024068601A1Pipeline provided with silencing structureJOHNSON CONTROLS AIR CONDITIONING AND REFRIGERATION WUXI CO LTD·Filed 2022·Application pending·0 cites
- 3439US6204107B1Method for forming multi-layered liner on sidewall of node contact openingUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 20, 2001·9 cites·22 claims
- 3537US6136642AMethod of making a dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 24, 2000·4 cites·22 claims
- 3636US6159806AMethod for increasing the effective spacer widthUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 12, 2000·7 cites·22 claims
- 3736US6150263AMethod of fabricating small dimension wiresUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 21, 2000·7 cites·15 claims
- 3835US2002098699A1Method of forming a bit line and a node contact holeFiled 2001·Application pending·0 cites
- 3934US6225160B1Method of manufacturing bottom electrode of capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 1, 2001·6 cites·20 claims
- 4034US6150278AMethod of fabricating node capacitor for DRAM processesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·4 cites·26 claims
- 4133US6188116B1Structure of a polysilicon plugUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 13, 2001·3 cites·9 claims
- 4233US6150216AMethod for forming an electrode of semiconductor device capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 21, 2000·4 cites·14 claims
- 4332US6218243B1Method of fabricating a DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 17, 2001·2 cites·16 claims
- 4432US2002173099A1Method for fabricating a mos transistor of an embedded memoryFiled 2001·Application pending·0 cites
- 4530US6162678ASimple small feature size bit line formation in DRAM with RTO oxidationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 19, 2000·2 cites·16 claims
- 4630US6140202AMethod of fabricating double-cylinder capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 31, 2000·1 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →