Inventor · disambiguated record
Ku-Feng Lin
Also filed as: LIN KU-FENG
66 granted patents·30 pending applications·142 citations·filing 2009–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD85TAIWAN SEMICONDUCTOR MFG4YU HUNG-CHANG2CHANG MENG-FAN1CHIU PI-FENG1
Top patents by PatentIndex Score
96 records- 0197US11950432B2Semiconductor packages and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·3 cites·20 claims
- 0297US11688436B2Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·6 cites·20 claims
- 0397US11601117B1Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·19 claims
- 0497US11574657B2Memory device, sense amplifier and method for mismatch compensationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·5 cites·20 claims
- 0597US11373690B2Circuits and methods for compensating a mismatch in a sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·3 cites·20 claims
- 0696US11903188B2Memory devices, semiconductor devices, and methods of operating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0796US11854650B2Memory device, sense amplifier and method for mismatch compensationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
- 0895US12277990B2Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·2 cites·20 claims
- 0995US8331134B2Non-volatile static random access memory and operation method thereofCHIU PI-FENG·Filed 2010·Granted Dec 11, 2012·45 cites·23 claims
- 1094US11810635B2Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 7, 2023·1 cites·20 claims
- 1194US10957366B2Circuits and methods for compensating a mismatch in a sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
- 1293US11380415B2Dynamic error monitor and repairTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
- 1392US11783873B2Circuits and methods for compensating a mismatch in a sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·1 cites·20 claims
- 1491US11961546B2MRAM reference currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 1591US8923040B2Accommodating balance of bit line and source line resistances in magnetoresistive random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·15 cites·20 claims
- 1691US2025363277A1Design-for-test circuits and methods of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1790US12288577B2Sensing amplifier, method and controller for sensing memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·1 cites·20 claims
- 1889US2025322873A1Non-volatile static random access memory (nvsram) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1988US11962332B2EncoderTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·1 cites·20 claims
- 2088US11380371B2Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·2 cites·20 claims
- 2187US11631440B2Sensing amplifier, method and controller for sensing memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 18, 2023·1 cites·20 claims
- 2287US2025365945A1Backside metal rom device, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2387US2025359041A1Rom device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2487US2025365948A1Read-only memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2585US2024363152A1Circuits and methods for compensating a mismatch in a sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2684US12432933B2Semiconductor packagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 2784US12080375B2Circuits and methods for compensating a mismatch in a sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·10 claims
- 2884US2025157501A1Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2984US2025338506A1Semiconductor packagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3083US2025349356A1Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3183US2025359074A1Memory devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3282US12380950B2Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 3382US2025356896A1Memory devices with dual-side access circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3481US12190986B2Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 3581US2025344380A1Memory devices with partially misaligned gap locations and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3680US10372948B2Scrambling apparatus and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 6, 2019·3 cites·20 claims
- 3779US12482531B2Dynamic error monitor and repairTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 3879US10163980B2Resistive memory array and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
- 3979US2025203859A1Rom device, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4079US2025210074A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4179US2025203856A1Backside metal rom device, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4278US12514132B2Memory device with source lines in parallelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 4378US12230352B2Memory device, memory cell read circuit, and control method for mismatch compensationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 4478US11984164B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 4578US11081155B2MRAM reference currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·3 cites·20 claims
- 4678US10366765B2Adjustment circuit for partitioned memory blockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·3 cites·20 claims
- 4777US2025157500A1Memory device, memory cell read circuit, and control method for mismatch compensationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4876US11386936B2Memory device, sensing amplifier, and method for sensing memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·1 cites·14 claims
- 4975US12284804B2Memory devices, semiconductor devices, and methods of operations a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 5075US11854617B2Structure for multiple sense amplifiers of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·0 cites·20 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →