Inventor · disambiguated record
Kuei-Lun Lin
Also filed as: LIN KUEI-LUN
16 granted patents·16 pending applications·5 citations·filing 2018–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD32
Top patents by PatentIndex Score
32 records- 0196US12015066B2Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·3 cites·20 claims
- 0287US11901436B2Formation of transistor gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0384US12302627B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0484US2025344483A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0582US2025267920A1Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0681US12272557B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0779US12171091B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 0879US11908745B2Semiconductor device with non-conformal gate dieletric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 20, 2024·0 cites·20 claims
- 0979US2025366157A1Volumeless Threshold Voltage Tuning for Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1079US2025351560A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US2024379366A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1278US2024381608A1Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1376US2025316485A1Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1475US12336251B2Formation of transistor gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1574US12041760B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1674US2025287667A1Formation of transistor gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1773US2024387686A1Semiconductor Device and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1873US2023378294A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1973US2024371643A1Semiconductor device structure with gate and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2072US11605563B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 2171US11862468B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 2271US2024290662A1Volumeless Threshold Voltage Tuning for Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2369US2024021693A1Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2466US12417918B2Semiconductor device having doped gate dielectric layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 2566US12051594B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 2664US12170321B2Fin field effect transistor having conformal and non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 17, 2024·0 cites·20 claims
- 2764US2023335551A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2864US2023163191A1Semiconductor Device and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2953US11107897B2Methods of forming semiconductor devices and FinFET devices having shielding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·19 claims
- 3052US2023135155A1Atomic Layer Etching to Reduce Pattern Loading in High-K Dielectric LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3151US10367078B2Semiconductor devices and FinFET devices having shielding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 30, 2019·0 cites·16 claims
- 3248US12022643B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 25, 2024·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →