Inventor · disambiguated record
Kung Linliu
Also filed as: LINLIU KUNG
29 granted patents·2 pending applications·899 citations·filing 1996–2023
97Inventor score
Files withVANGUARD INT SEMICONDUCT CORP8WORLDWIDE SEMICONDUCTOR MFG6TAIWAN SEMICONDUCTOR MFG4WORLDWIDE SEMICONDUCTOR MANUFA4NANODYNAMICS INC2
Top patents by PatentIndex Score
31 records- 0196US6110837AMethod for forming a hard mask of half critical dimensionWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 29, 2000·240 cites·16 claims
- 0294US5688713AMethod of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Nov 18, 1997·194 cites·20 claims
- 0388US6022776AMethod of using silicon oxynitride to improve fabricating of DRAM contacts and landing padsWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Feb 8, 2000·60 cites·3 claims
- 0486US7954924B2Package method of inkjet-printhead chip and its structureNAT SYNCHROTRON RADIATION RES CT·Filed 2006·Granted Jun 7, 2011·7 cites·7 claims
- 0584US5773199AMethod for controlling linewidth by etching bottom anti-reflective coatingVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jun 30, 1998·96 cites·18 claims
- 0677US6773094B2Method of using photolithography and etching for forming a nozzle plate of an inkjet print headNANODYNAMICS INC·Filed 2003·Granted Aug 10, 2004·21 cites·9 claims
- 0777US6569760B1Method to prevent poison viaTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 27, 2003·20 cites·22 claims
- 0873US8303087B2Package structure of inkjet-printhead chipLINLIU KUNG·Filed 2011·Granted Nov 6, 2012·2 cites·5 claims
- 0967US6287957B1Self-aligned contact processWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Sep 11, 2001·33 cites·27 claims
- 1062US2025085626A1Alignment forming method for hologram filmK LASER TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 1160US6348707B1Method of manufacturing semiconductor capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 19, 2002·9 cites·19 claims
- 1259US5924000AMethod for forming residue free patterned polysilicon layer containing integrated circuit structuresVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jul 13, 1999·23 cites·11 claims
- 1358US6100577AContact process using Y-contact etchingVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Aug 8, 2000·18 cites·4 claims
- 1457US6121082AMethod of fabricating DRAM with novel landing pad processWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Sep 19, 2000·25 cites·18 claims
- 1556US6136646AMethod for manufacturing DRAM capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Oct 24, 2000·17 cites·14 claims
- 1655US6479401B1Method of forming a dual-layer anti-reflective coatingWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Nov 12, 2002·21 cites·10 claims
- 1754US6180483B1Structure and fabrication method for multiple crown capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 30, 2001·14 cites·14 claims
- 1847US6303431B1Method of fabricating bit linesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 16, 2001·13 cites·22 claims
- 1947US5950104AContact process using Y-contact etchingVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Sep 7, 1999·11 cites·12 claims
- 2045US5865891APlanarization process using artificial gravityVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Feb 2, 1999·9 cites·9 claims
- 2144US5902133AMethod of forming a narrow polysilicon gate with i-line lithographyVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted May 11, 1999·11 cites·17 claims
- 2243US6300240B1Method for forming bottom anti-reflective coating (BARC)WORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Oct 9, 2001·14 cites·12 claims
- 2342US6037217AMethod of fabricating a capacitor electrode structure in a dynamic random-access memory deviceWORLWIDE SEMICONDUCTOR MANUFAC·Filed 1999·Granted Mar 14, 2000·9 cites·13 claims
- 2442US5866478AMetallization process using artificial gravityVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Feb 2, 1999·9 cites·17 claims
- 2540US6133085AMethod for making a DRAM capacitor using a rotated photolithography maskTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Oct 17, 2000·6 cites·9 claims
- 2636US6921629B2Self-aligned fabrication process for a nozzle plate of an inkjet print headNANODYNAMICS INC·Filed 2003·Granted Jul 26, 2005·2 cites·18 claims
- 2735US6165909AMethod for fabricating capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 26, 2000·3 cites·19 claims
- 2834US6263586B1Device and method for planarizing a thin filmTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 24, 2001·3 cites·8 claims
- 2934US6096653AMethod for fabricating conducting lines with a high topography heightWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 1, 2000·3 cites·4 claims
- 3034US6033966AMethod for making an 8-shaped storage node DRAM cellWORLDWIDE SEMINCONDUCTOR MANUF·Filed 1998·Granted Mar 7, 2000·6 cites·5 claims
- 3131US2003184616A1Nozzle plate and manufacturing method thereofFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →