Inventor · disambiguated record
Kuan-Ting Liu
Also filed as: LIU KUAN-TING
40 granted patents·23 pending applications·55 citations·filing 2005–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39APPLIED MATERIALS INC6NINGBO KING MOUNT CO LTD6TEXAS INSTRUMENTS INC3TAIWAN SEMICONDUCTOR MFG2
Top patents by PatentIndex Score
63 records- 0194US11527622B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0293US11990522B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 0392US11594610B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 0491US11075124B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 27, 2021·2 cites·20 claims
- 0591US10504789B1Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 0690US8766379B2Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layerLIU KUAN-TING·Filed 2011·Granted Jul 1, 2014·17 cites·15 claims
- 0789US9837507B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·5 cites·16 claims
- 0888US9590065B2Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 7, 2017·6 cites·20 claims
- 0985US12170280B2Method of manufacturing gate structure and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 1084US12176251B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 1184US11270994B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 8, 2022·2 cites·20 claims
- 1282US12382691B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1381US2024088144A1Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1480US11648658B2Screwdriver structureNINGBO KING MOUNT CO LTD·Filed 2021·Granted May 16, 2023·1 cites·10 claims
- 1579US10157998B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 1679US2025349723A1Forming silicon-containing material over metal gate to reduce loading between long channel and short channel transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1778US12142531B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1878US11855083B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·13 claims
- 1978US2025351541A1Semiconductor gate structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2078US2024379810A1Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US12148810B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 2277US2025338567A1Lowering pmosfet threshold voltage through ternary-element nitrideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2377US2025366121A1Area-selective removal and selective metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2476US11311986B2Screwdriver rotation structureNINGBO KING MOUNT CO LTD·Filed 2020·Granted Apr 26, 2022·1 cites·7 claims
- 2576US11075275B2Metal gate fill for short-channel and long-channel semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·2 cites·20 claims
- 2676US2025366114A1Metal caps for gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2775US11804409B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 2875US10699966B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·1 cites·20 claims
- 2974US2025275185A1Metal gate for gate-all-around devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3073US10269918B2N-work function metal with crystal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·1 cites·39 claims
- 3173US2024379796A1Forming Low-Resistance Capping Layer Over Metal Gate ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3271US2025338599A1Semiconductor gate structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3371US2025318206A1Lowering pmosfet threshold voltage through ternary-element nitrideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3470US2024420948A1Selective carbon deposition on top and bottom surfaces of semiconductor substratesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3569US12336244B2Metal caps for gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3669US12288811B2Metal gate for gate-all-around devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 3768US2023028460A1Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3866US11322411B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 3, 2022·0 cites·20 claims
- 3966US11302582B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·0 cites·20 claims
- 4064US12094948B2Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4164US12002705B2Methods and apparatus for forming backside power railsAPPLIED MATERIALS INC·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 4264US9698019B2N-work function metal with crystal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·1 cites·20 claims
- 4364US9257349B2Method of scavenging impurities in forming a gate stack having an interfacial layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·1 cites·20 claims
- 4463US12125699B2Selective carbon deposition on top and bottom surfaces of semiconductor substratesAPPLIED MATERIALS INC·Filed 2021·Granted Oct 22, 2024·0 cites·15 claims
- 4563US2025269503A1Hand tool holderNINGBO KING MOUNT CO LTD·Filed 2024·Application pending·0 cites
- 4662US11133395B2N-work function metal with crystal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·18 claims
- 4762US9396953B2Conformity control for metal gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·1 cites·20 claims
- 4862US2025157851A1Method and Apparatus for Forming Backside Power RailsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4961US2025336778A1Ic package with connection pads for dieTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 5061US2025336872A1Microelectronic device package with embedded semiconductor dies integrated with integral passive componentsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →