Inventor · disambiguated record
Kuowei Liu
Also filed as: LIU KUOWEI
18 granted patents·5 pending applications·2,918 citations·filing 1998–2007
97Inventor score
Top patents by PatentIndex Score
23 records- 0199US6072227ALow power method of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1998·Granted Jun 6, 2000·541 cites·26 claims
- 0299US6054379AMethod of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1998·Granted Apr 25, 2000·609 cites·98 claims
- 0398US6627532B1Method of decreasing the K value in SiOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·358 cites·27 claims
- 0498US6340435B1Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 22, 2002·536 cites·14 claims
- 0597US6858153B2Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Feb 22, 2005·256 cites·21 claims
- 0697US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 0796US6730593B2Method of depositing a low K dielectric with organo silaneAPPLIED MATERIALS INC·Filed 2001·Granted May 4, 2004·60 cites·10 claims
- 0896US6511909B1Method of depositing a low K dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1999·Granted Jan 28, 2003·100 cites·20 claims
- 0995US6511903B1Method of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1999·Granted Jan 28, 2003·91 cites·61 claims
- 1093US7651725B2Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondAPPLIED MATERIALS INC·Filed 2007·Granted Jan 26, 2010·7 cites·6 claims
- 1193US6770556B2Method of depositing a low dielectric with organo silaneAPPLIED MATERIALS INC·Filed 2002·Granted Aug 3, 2004·29 cites·34 claims
- 1293US6669858B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 30, 2003·47 cites·14 claims
- 1392US7023092B2Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 4, 2006·25 cites·12 claims
- 1491US6784119B2Method of decreasing the K value in SIOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2003·Granted Aug 31, 2004·36 cites·20 claims
- 1589US7227244B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2004·Granted Jun 5, 2007·27 cites·8 claims
- 1689US6806207B2Method of depositing low K filmsAPPLIED MATERIALS INC·Filed 2003·Granted Oct 19, 2004·34 cites·20 claims
- 1785US7160821B2Method of depositing low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Jan 9, 2007·25 cites·20 claims
- 1873US7074708B2Method of decreasing the k value in sioc layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2004·Granted Jul 11, 2006·8 cites·20 claims
- 1959US2008064225A1Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondYAU WAI-FAN·Filed 2007·Application pending·0 cites
- 2059US2008061439A1Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondYAU WAI-FAN·Filed 2007·Application pending·0 cites
- 2154US2005156317A1Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2246US2004147109A1Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 2331US2002000670A1A low dielectric constant film produced from silicon compounds comprising silicon-carbon bondsFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →