Inventor · disambiguated record
Kurt A. Moen
Also filed as: MOEN KURT · MOEN KURT A
6 granted patents·5 pending applications·36 citations·filing 2016–2025
77Inventor score
Files withNEWPORT FAB LLC6NEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH4NEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC1
Top patents by PatentIndex Score
11 records- 0195US10062712B1Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuitNEWPORT FAB LLC·Filed 2017·Granted Aug 28, 2018·28 cites·11 claims
- 0287US10319716B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2017·Granted Jun 11, 2019·5 cites·21 claims
- 0375US10290631B2Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon regionNEWPORT FAB LLC·Filed 2017·Granted May 14, 2019·2 cites·13 claims
- 0475US2025285912A1SOI Device with Carbon in Body RegionsNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2025·Application pending·0 cites
- 0575US2025285913A1Method of Fabricating SOI Device with Carbon in Body RegionsNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2025·Application pending·0 cites
- 0675US2025279314A1Method for Fabricating SOI with Carbon and Body DopantsNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2025·Application pending·0 cites
- 0770US10325907B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·1 cites·25 claims
- 0855US10347625B2Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon regionNEWPORT FAB LLC·Filed 2018·Granted Jul 9, 2019·0 cites·21 claims
- 0954US11955555B2Field effect transistors with reduced leakage currentNEWPORT FAB LLC·Filed 2022·Granted Apr 9, 2024·0 cites·19 claims
- 1053US2025133766A1Radio Frequency (RF) Semiconductor-On-Insulator (SOI) Device with Improved Power HandlingNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2023·Application pending·0 cites
- 1125US2017338321A1Nickel silicide implementation for silicon-on-insulator (soi) radio frequency (rf) switch technologyNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →