Inventor · disambiguated record
Kuan-Ting Pan
Also filed as: Pan Kuan-Ting
95 granted patents·64 pending applications·108 citations·filing 2016–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD159
Top patents by PatentIndex Score
159 records- 0198US11948973B2Gate-all-around field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·4 cites·20 claims
- 0298US11616062B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·7 cites·20 claims
- 0398US11502187B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·3 cites·20 claims
- 0497US11735482B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·2 cites·20 claims
- 0597US11328963B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·3 cites·20 claims
- 0697US10181426B1Etch profile control of polysilicon structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·15 cites·20 claims
- 0796US12272690B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·2 cites·20 claims
- 0896US10943830B2Self-aligned structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·13 cites·20 claims
- 0995US12199097B2Seam free isolation structures and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·2 cites·20 claims
- 1095US11916122B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 1194US12080776B2Field effect transistor with fin isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 1294US10825918B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·6 cites·20 claims
- 1394US10290635B2Buried interconnect conductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·7 cites·20 claims
- 1492US11355398B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 1591US11637102B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·2 cites·20 claims
- 1691US11114529B2Gate-all-around field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·4 cites·20 claims
- 1791US10985072B2Etch profile control of polysilicon structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·2 cites·20 claims
- 1891US10985277B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·2 cites·20 claims
- 1991US2025359288A1Multi-Gate Device And Related MethodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2088US10658245B2Etch profile control of polysilicon structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
- 2188US2025366180A1Gate Isolation for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2288US2025364325A1Semiconductor structure with dielectric featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2387US12107006B2Method for manufacturing semiconductor structure with dielectric featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·1 cites·20 claims
- 2487US10510873B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·3 cites·20 claims
- 2587US9741821B1Two-step dummy gate formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 22, 2017·5 cites·20 claims
- 2687US2025359316A1Semiconductor Devices With Dielectric Fins And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2787US2025359297A1Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2886US12439680B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 2986US2025359160A1Semiconductor structure with dielectric featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3086US2025311379A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3185US12376366B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 3285US11929287B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 3385US11837504B2Self-aligned structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·1 cites·20 claims
- 3485US2025081594A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3584US12317528B2Gate isolation feature and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 3684US11735591B2Semiconductor devices with dielectric fins and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·1 cites·20 claims
- 3784US11563106B2Formation method of isolation feature of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·1 cites·20 claims
- 3884US2025072054A1Semiconductor device with dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3983US12457798B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 4083US12148815B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4183US12034062B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 4283US11355396B2Method of forming a semiconductor structure including laterally etching semiconductor material in fin recess region and depositing metal gate thereinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 7, 2022·2 cites·20 claims
- 4383US2025311415A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4483US2025366184A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4583US2025324686A1Convergent fin and nanostructure transistor structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4683US2025311386A1Improved Nanosheet ThicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4783US2025366055A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4883US2024371866A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4983US2025366070A1Field effect transistor with isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5082US12300732B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
Showing the top 50 of 159 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →