Inventor · disambiguated record
Kuan-Chi Tsai
Also filed as: TSAI KUAN-CHI
31 granted patents·3 pending applications·42 citations·filing 2005–2024
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21TAIWAN SEMICONDUCTOR MFG7CHEN WEN-CHAO1CHEN YU-WEN1LU YING-TI1
Top patents by PatentIndex Score
34 records- 0190US11834332B2Bond wave optimization method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 0289US9761546B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 0383US8860224B2Preventing the cracking of passivation layers on ultra-thick metalsCHEN YU-WEN·Filed 2011·Granted Oct 14, 2014·8 cites·18 claims
- 0481US9711521B2Substrate fabrication method to improve RF (radio frequency) device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 0581US2024383005A1Semiconductor device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0680US12162749B2Bond wave optimization method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0777US8552486B2Forming metal-insulator-metal capacitors over a top metal layerWU KUN-MAO·Filed 2011·Granted Oct 8, 2013·6 cites·20 claims
- 0876US9373536B2Stress reduction apparatusTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 21, 2016·3 cites·19 claims
- 0975US8741732B2Forming metal-insulator-metal capacitors over a top metal layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 3, 2014·3 cites·20 claims
- 1074US12491536B2Semiconductor device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·12 claims
- 1173US10515949B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 24, 2019·3 cites·20 claims
- 1271US11264378B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·1 cites·20 claims
- 1368US9865534B2Stress reduction apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·1 cites·20 claims
- 1467US9048287B1Mechanisms for forming semiconductor device structure with floating spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·2 cites·17 claims
- 1564US11121100B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 1663US9799557B2Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 24, 2017·1 cites·18 claims
- 1762US8941211B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
- 1858US11121098B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 14, 2021·0 cites·20 claims
- 1957US8884441B2Process of ultra thick trench etch with multi-slope profileTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 11, 2014·1 cites·13 claims
- 2057US8629559B2Stress reduction apparatus with an inverted cup-shaped layerLU YING-TI·Filed 2012·Granted Jan 14, 2014·1 cites·20 claims
- 2156US10290576B2Stress reduction apparatus with an inverted cup-shaped layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 14, 2019·0 cites·20 claims
- 2253US9230988B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 2353US2023278073A1Semiconductor device with improved dielectric film structure and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2452US9184154B2Methods for fabricating integrated passive devices on glass substratesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 10, 2015·0 cites·20 claims
- 2551US9373675B2Capacitor structure and method of forming the sameLin tai-chun·Filed 2012·Granted Jun 21, 2016·1 cites·20 claims
- 2650US9589831B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·0 cites·20 claims
- 2746US10090327B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 2, 2018·0 cites·19 claims
- 2845US9543152B2MIM capacitors for leakage current improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·0 cites·20 claims
- 2945US9343352B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 17, 2016·0 cites·20 claims
- 3042US2012190152A1Methods for Fabricating Integrated Passive Devices on Glass SubstratesCHEN WEN-CHAO·Filed 2011·Application pending·0 cites
- 3141US9362222B2Interconnection between inductor and metal-insulator-metal (MIM) capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 7, 2016·0 cites·16 claims
- 3241US7846832B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 7, 2010·0 cites·20 claims
- 3339US10153300B2Semiconductor device including a high-electron-mobility transistor (HEMT) and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·0 cites·19 claims
- 3435US8076235B2Semiconductor device and fabrication method thereofTSAI KUAN-CHI·Filed 2010·Granted Dec 13, 2011·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →