Inventor · disambiguated record
Kwang Chul Joo
Also filed as: JOO KWANG C · JOO KWANG CHUL
17 granted patents·9 pending applications·151 citations·filing 2000–2008
93Inventor score
Top patents by PatentIndex Score
26 records- 0183US6340622B1Method for fabricating capacitors of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jan 22, 2002·29 cites·20 claims
- 0277US6627494B2Method for forming gate electrode of flash memoryHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 30, 2003·32 cites·18 claims
- 0374US6943075B2Method for manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 13, 2005·15 cites·16 claims
- 0472US7374997B2Method of manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 20, 2008·4 cites·24 claims
- 0572US6878588B2Method for fabricating a flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Apr 12, 2005·15 cites·26 claims
- 0670US7157334B2Method of manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jan 2, 2007·3 cites·12 claims
- 0770US6376299B1Capacitor for semiconductor memory device and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Apr 23, 2002·12 cites·24 claims
- 0865US6410400B1Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layerHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 25, 2002·10 cites·4 claims
- 0962US7393744B2Method of manufacturing dielectric film of flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 1, 2008·1 cites·17 claims
- 1061US6893922B2Non-volatile memory device and manufacturing method thereofHYUNDAI ELECTRONICS IND·Filed 2002·Granted May 17, 2005·8 cites·13 claims
- 1152US7148109B2Method for manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Dec 12, 2006·5 cites·24 claims
- 1252US7132328B2Method of manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 7, 2006·5 cites·16 claims
- 1352US6316307B1Method of forming a capacitor for a semiconductor memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Nov 13, 2001·3 cites·36 claims
- 1450US6566189B2Method for manufacturing gate in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 20, 2003·4 cites·20 claims
- 1547US7371670B2Method for forming a (TaO)1-x(TiO)xN dielectric layer in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 13, 2008·0 cites·15 claims
- 1647US6979657B2Method for forming a dielectric layer in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 27, 2005·2 cites·11 claims
- 1747US6818506B2Method of forming a gate electrode in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 16, 2004·3 cites·12 claims
- 1844US2008194074A1Annealing process of polysilizane layer and method of forming isolation layer of semiconductor device employing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 1943US2009096012A1Flash memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 2042US2005161729A1Flash memory cell and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 2142US2008160785A1Method Of Forming Oxide Layer In Semiconductor DeviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2239US2002100959A1Capacitor for semiconductor memory device and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2002·Application pending·0 cites
- 2337US2004011279A1Method of manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Application pending·0 cites
- 2437US2004126967A1Method of manufacturing non-volatile memory deviceFiled 2003·Application pending·0 cites
- 2536US2003116795A1Method of manufacturing a tantalum pentaoxide - aluminum oxide film and semiconductor device using the filmFiled 2002·Application pending·0 cites
- 2636US2003100162A1Method for forming capacitor of semiconductor deviceFiled 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kwang Chul Joo files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →