Inventor · disambiguated record
Kwangseok Kim
Also filed as: KIM KWANGSEOK
17 granted patents·11 pending applications·40 citations·filing 2015–2025
91Inventor score
Top patents by PatentIndex Score
28 records- 0193US9543505B2Magnetic memory device and method for manufacturing the samePARK SANG HWAN·Filed 2015·Granted Jan 10, 2017·12 cites·15 claims
- 0291US12052930B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 30, 2024·1 cites·27 claims
- 0390US9842636B2Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording mediumNAT INST MATERIALS SCIENCE·Filed 2016·Granted Dec 12, 2017·5 cites·12 claims
- 0489US9859488B2Magnetic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 2, 2018·5 cites·20 claims
- 0588US2025344609A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0684US12068810B2Electronic device having transparent antennaLG ELECTRONICS INC·Filed 2020·Granted Aug 20, 2024·2 cites·13 claims
- 0784US9640755B2Magnetic memory device and method of manufacturing the sameLEE JOONMYOUNG·Filed 2015·Granted May 2, 2017·4 cites·20 claims
- 0883US9799823B1High temperature endurable MTJ stackIBM·Filed 2016·Granted Oct 24, 2017·4 cites·10 claims
- 0983US2024387089A1Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1083US2024334840A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1182US12310250B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 1282US11855331B2Broadband antennas mounted on vehicleLG ELECTRONICS INC·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 1382US2025261565A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1481US12382839B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·31 claims
- 1578US12080459B2Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·36 claims
- 1678US10003011B2Magnetic memory devices and methods for manufacturing the samePARK SANG HWAN·Filed 2017·Granted Jun 19, 2018·3 cites·20 claims
- 1773US10256399B2Fabricating a cap layer for a magnetic random access memory (MRAM) deviceIBM·Filed 2016·Granted Apr 9, 2019·2 cites·16 claims
- 1869US9923138B2Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 20, 2018·1 cites·6 claims
- 1962US2025285671A1Magnetic memory using spin current, operating method thereof, and electronic apparatus including magnetic memorySAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2062US2025127061A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2161US12484456B2Spin orbit torque magnetic memory devices, operating methods thereof, and electronic apparatuses including the magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 2261US12150387B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 2360US2024251685A1Magnetic memory devices using spin current and electronic apparatuses including the magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2460US2025203877A1Magnetic memory device including tunneling magnetoresistance layer and memory device including the magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2558US2024321333A1Magnetic tunneling junction device capable of magnetic switching without external magnetic field and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2655US12334126B2Magnetic memory using spin current, operating method thereof, and electronic apparatus including magnetic memorySAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·21 claims
- 2742US2023019156A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2837US2017338402A1Noble metal cap layer for a metal oxide cap of a magnetic tunnel junction structureIBM·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →