Inventor · disambiguated record
Kwang-Jin Moon
Also filed as: MOON KWANG-JIN
67 granted patents·17 pending applications·674 citations·filing 2001–2025
99Inventor score
Top patents by PatentIndex Score
84 records- 0198US9941243B2Wafer-to-wafer bonding structureSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 10, 2018·237 cites·20 claims
- 0297US7416981B2Method of forming metal layer used in the fabrication of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·49 cites·18 claims
- 0396US12170259B2Semiconductor package and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 17, 2024·4 cites·20 claims
- 0496US8076234B1Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structurePARK BYUNG-LYUL·Filed 2010·Granted Dec 13, 2011·40 cites·19 claims
- 0594US10950578B2Semiconductor device, semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 16, 2021·13 cites·20 claims
- 0694US9691684B2Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the samePARK JAE-HWA·Filed 2014·Granted Jun 27, 2017·21 cites·20 claims
- 0794US8390120B2Semiconductor device and method of fabricating the sameMOON KWANG-JIN·Filed 2010·Granted Mar 5, 2013·29 cites·29 claims
- 0893US10639875B2Wafer bonding apparatus and wafer bonding system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 5, 2020·6 cites·20 claims
- 0993US9379042B2Integrated circuit devices having through silicon via structures and methods of manufacturing the samePARK JAE-HWA·Filed 2014·Granted Jun 28, 2016·15 cites·19 claims
- 1093US8592310B2Methods of manufacturing a semiconductor devicePARK BYUNG-LYUL·Filed 2011·Granted Nov 26, 2013·18 cites·20 claims
- 1192US10468400B2Method of manufacturing substrate structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 5, 2019·8 cites·19 claims
- 1292US8884440B2Integrated circuit device including through-silicon via structure having offset interfaceKIM SU-KYOUNG·Filed 2012·Granted Nov 11, 2014·19 cites·19 claims
- 1391US10325869B2Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 18, 2019·6 cites·20 claims
- 1491US9728490B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·9 cites·16 claims
- 1590US9337125B2Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structureSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 10, 2016·10 cites·18 claims
- 1690US9214411B2Integrated circuit devices including a through-silicon via structure and methods of fabricating the samePARK JAE-HWA·Filed 2014·Granted Dec 15, 2015·12 cites·15 claims
- 1790US9142490B2Integrated circuit device having through-silicon-via structure and method of manufacturing the integrated circuit devicePARK JAE-HWA·Filed 2014·Granted Sep 22, 2015·11 cites·20 claims
- 1888US10906283B2Wafer bonding apparatus for directly bonding wafers and a wafer bonding system having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·19 claims
- 1988US7615817B2Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 10, 2009·14 cites·9 claims
- 2087US10325897B2Method for fabricating substrate structure and substrate structure fabricated by using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 18, 2019·4 cites·20 claims
- 2187US9018768B2Integrated circuit having through silicon via structure with minimized deteriorationPARK BYUNG-LYUL·Filed 2012·Granted Apr 28, 2015·10 cites·7 claims
- 2287US8173506B2Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layersJUNG EUN-JI·Filed 2009·Granted May 8, 2012·17 cites·17 claims
- 2386US8546256B2Method of forming semiconductor deviceJUNG DEOK-YOUNG·Filed 2011·Granted Oct 1, 2013·7 cites·20 claims
- 2483US10833032B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 10, 2020·3 cites·20 claims
- 2582US11469202B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·1 cites·20 claims
- 2682US10580726B2Semiconductor devices and semiconductor packages including the same, and methods of manufacturing the semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·3 cites·20 claims
- 2782US7223689B2Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·14 claims
- 2881US7662716B2Method for forming silicide contactsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·6 cites·16 claims
- 2980US8860221B2Electrode connecting structures containing copperSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 14, 2014·5 cites·20 claims
- 3079US7172967B2Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 6, 2007·19 cites·22 claims
- 3178US9252141B2Semiconductor integrated circuit, method for fabricating the same, and semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·4 cites·18 claims
- 3277US6573147B2Method of forming a semiconductor device having contact using crack-protecting layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 3, 2003·19 cites·17 claims
- 3375US2025054891A1Semiconductor package and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3471US12014972B2Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 18, 2024·0 cites·13 claims
- 3570US11728297B2Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3670US10763163B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 1, 2020·1 cites·19 claims
- 3770US10446774B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 15, 2019·1 cites·19 claims
- 3870US7211506B2Methods of forming cobalt layers for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 1, 2007·12 cites·15 claims
- 3969US12249557B2Semiconductor device including backside wiring structure with super viaSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 4069US11043445B2Semiconductor device having a through silicon via and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 22, 2021·1 cites·17 claims
- 4168US8847399B2Semiconductor device and method of fabricating the samePARK BYUNG-LYUL·Filed 2011·Granted Sep 30, 2014·2 cites·16 claims
- 4268US2025210529A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4367US11069597B2Semiconductor chips and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·1 cites·20 claims
- 4467US9530726B2Semiconductor device and method of fabricating the sameMOON KWANG-JIN·Filed 2013·Granted Dec 27, 2016·2 cites·16 claims
- 4567US6821572B2Method of cleaning a chemical vapor deposition chamberSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 23, 2004·10 cites·20 claims
- 4666US12266609B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·19 claims
- 4766US2025183122A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4863US9831164B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 28, 2017·1 cites·15 claims
- 4963US7547607B2Methods of fabricating integrated circuit capacitors using a dry etching processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 16, 2009·1 cites·10 claims
- 5062US11600552B2Semiconductor device having a through silicon via and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →