Inventor · disambiguated record
Kwang-Yong Yang
Also filed as: YANG KWANG-YONG
22 granted patents·1 pending application·116 citations·filing 2004–2025
94Inventor score
Top patents by PatentIndex Score
23 records- 0198US9299700B2Semiconductor devices including a dummy gate structure on a finPARK SANG-JINE·Filed 2015·Granted Mar 29, 2016·33 cites·20 claims
- 0296US9673279B2Semiconductor device having multi-channel and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 6, 2017·26 cites·20 claims
- 0394US9548309B2Semiconductor devices including a dummy gate structure on a finPARK SANG-JINE·Filed 2016·Granted Jan 17, 2017·10 cites·7 claims
- 0489US9881838B2Semiconductor devices having multiple gate structures and methods of manufacturing such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 30, 2018·5 cites·12 claims
- 0588US9947672B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 17, 2018·4 cites·8 claims
- 0686US10096605B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·3 cites·16 claims
- 0784US10529801B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 0883US12261200B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·19 claims
- 0982US9941174B2Semiconductor devices having fin active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·3 cites·16 claims
- 1082US9590103B2Semiconductor devices having multiple gate structures and methods of manufacturing such devicesKIM YOON HAE·Filed 2016·Granted Mar 7, 2017·4 cites·20 claims
- 1180US11830911B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 28, 2023·0 cites·20 claims
- 1279US7239900B2Method and apparatus for detecting a position of a folder in a rotation touch phone having a cameraSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 3, 2007·23 cites·10 claims
- 1375US10964782B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 1472US11575002B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 1561US10446561B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 15, 2019·0 cites·20 claims
- 1659US8551888B2Method of forming patterns for semiconductor deviceKANG YUN-SEUNG·Filed 2011·Granted Oct 8, 2013·1 cites·16 claims
- 1756US10312153B2Semiconductor devices having FIN active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 4, 2019·0 cites·19 claims
- 1852US12501599B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 16, 2025·0 cites·18 claims
- 1952US10593596B2Semiconductor device, method of fabricating the same, and patterning methodSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 17, 2020·0 cites·18 claims
- 2052US9954061B2Method of forming semiconductor device having multi-channelSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 24, 2018·0 cites·15 claims
- 2149US2025380499A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2247US9984931B2Semiconductor device, method of fabricating the same, and patterning methodSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·0 cites·17 claims
- 2342US9985025B1Active pattern structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 29, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →