Inventor · disambiguated record
Kyungin Choi
Also filed as: CHOI KYUNGIN
37 granted patents·2 pending applications·47 citations·filing 2014–2025
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD39
Top patents by PatentIndex Score
39 records- 0193US11682673B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·3 cites·20 claims
- 0293US10043800B2Integrated circuit device with gate line crossing fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 7, 2018·10 cites·20 claims
- 0392US10355000B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 16, 2019·8 cites·8 claims
- 0489US11322494B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 0589US11233151B2Active pattern structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 25, 2022·2 cites·17 claims
- 0685US9577075B2Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 21, 2017·6 cites·20 claims
- 0784US12113108B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 8, 2024·1 cites·20 claims
- 0883US12142652B2Semiconductor device including a capping patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 12, 2024·1 cites·19 claims
- 0983US11605711B2Semiconductor device having an air gap between gate electrode and source/drain patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 1082US9941174B2Semiconductor devices having fin active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·3 cites·16 claims
- 1181US12256564B2Semiconductor device having a liner layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 1281US10522537B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·15 claims
- 1379US12094975B2Active pattern structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·12 claims
- 1479US9793381B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 17, 2017·3 cites·20 claims
- 1574US12288805B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 1674US11888028B2Semiconductor device having a liner layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 1774US11881508B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·0 cites·19 claims
- 1873US12243874B2Method of forming a static random-access memory (SRAM) cell with fin field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1973US10128376B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·2 cites·20 claims
- 2073US10002788B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 19, 2018·2 cites·19 claims
- 2172US11749754B2Active pattern structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·9 claims
- 2270US12328937B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 2369US11791400B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 2468US11417731B2Semiconductor device including a field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 2567US12046632B2Semiconductor device having air gap between gate electrode and source/drain patternSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2666US11380760B2Semiconductor device including a densified device isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 2765US12034043B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·19 claims
- 2865US11532620B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 2963US12495578B2Semiconductor devices including source/drain layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·10 claims
- 3062US11205649B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 3162US11201087B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 3261US10847611B2Semiconductor device including patterns and layers having different helium concentrations and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·14 claims
- 3361US10804269B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 3460US11626401B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·0 cites·16 claims
- 3557US12310055B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 3656US10312153B2Semiconductor devices having FIN active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 4, 2019·0 cites·19 claims
- 3752US9825153B2Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 21, 2017·0 cites·13 claims
- 3849US2024072177A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3943US2025294870A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →