Inventor · disambiguated record
Kyeong-Tae Lee
Also filed as: LEE KYEONG TAE
10 granted patents·3 pending applications·168 citations·filing 2004–2023
88Inventor score
Top patents by PatentIndex Score
13 records- 0197US7718538B2Pulsed-plasma system with pulsed sample bias for etching semiconductor substratesAPPLIED MATERIALS INC·Filed 2007·Granted May 18, 2010·109 cites·9 claims
- 0293US7737042B2Pulsed-plasma system for etching semiconductor structuresAPPLIED MATERIALS INC·Filed 2007·Granted Jun 15, 2010·23 cites·9 claims
- 0392US7771606B2Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structuresAPPLIED MATERIALS INC·Filed 2007·Granted Aug 10, 2010·22 cites·18 claims
- 0475US8529776B2High lateral to vertical ratio etch process for device manufacturingLEE KYEONG TAE·Filed 2011·Granted Sep 10, 2013·4 cites·14 claims
- 0564US10460921B2High lateral to vertical ratio etch process for device manufacturingAPPLIED MATERIALS INC·Filed 2013·Granted Oct 29, 2019·1 cites·10 claims
- 0664US7754610B2Process for etching tungsten silicide overlying polysilicon particularly in a flash memoryAPPLIED MATERIALS INC·Filed 2006·Granted Jul 13, 2010·2 cites·35 claims
- 0764US2023290507A1Method and system of providing information to predicting breast reconstruction surgery prognosisSAMSUNG LIFE PUBLIC WELFARE FOUNDATION·Filed 2023·Application pending·0 cites
- 0862US11031233B2High lateral to vertical ratio etch process for device manufacturingAPPLIED MATERIALS INC·Filed 2019·Granted Jun 8, 2021·0 cites·16 claims
- 0957US2023290508A1Method and system of providing information to predicting breast reconstruction surgery prognosisSAMSUNG LIFE PUBLIC WELFARE FOUNDATION·Filed 2023·Application pending·0 cites
- 1056US11955318B2Ash rate recovery method in plasma strip chamberAPPLIED MATERIALS INC·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 1156US7368392B2Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrodeAPPLIED MATERIALS INC·Filed 2004·Granted May 6, 2008·7 cites·41 claims
- 1249US8956500B2Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactorYUEN STEPHEN·Filed 2007·Granted Feb 17, 2015·0 cites·7 claims
- 1347US2007281479A1Process including silo-chloro passivation for etching tungsten silicide overlying polysiliconAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →