Inventor · disambiguated record
Kyeong-Han Lee
Also filed as: LEE KYEONG · LEE KYEONG-HAN
12 granted patents·3 pending applications·191 citations·filing 2003–2016
90Inventor score
Top patents by PatentIndex Score
15 records- 0191US7064986B2Non-volatile semiconductor memory device using differential start programming voltage and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 20, 2006·66 cites·26 claims
- 0289US6853585B2Flash memory device having uniform threshold voltage distribution and method for verifying sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 8, 2005·51 cites·9 claims
- 0383US6882570B2Power detecting circuit and method for stable power-on reading of flash memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·35 cites·40 claims
- 0479US10284775B2Electronic device and method for processing captured image associated with preview frames by electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 7, 2019·3 cites·20 claims
- 0577US9281072B2Flash memory device and flash memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 8, 2016·3 cites·20 claims
- 0676US8286021B2Flash memory devices with high data transmission rates and memory systems including such flash memory devicesKIM YEON-HO·Filed 2007·Granted Oct 9, 2012·9 cites·24 claims
- 0773US7257028B2Temperature compensated bit-line prechargeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 14, 2007·20 cites·19 claims
- 0863US9715936B2Flash memory device for outputing data in synch with a first signal in an SDR mode and a DDR mode and a flash memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·1 cites·16 claims
- 0961US8464087B2Flash memory devices with high data transmission rates and memory systems including such flash memory devicesKIM YEON-HO·Filed 2011·Granted Jun 11, 2013·2 cites·43 claims
- 1047US9368168B2Nonvolatile memory device including a peripheral circuit to receive an address in synch with one of a rising and falling edge of a signal regardless of whether a first or second alignment type is selected and nonvolatile memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 14, 2016·0 cites·20 claims
- 1147US7535773B2Data output buffer whose mode switches according to operation frequency and semiconductor memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·1 cites·9 claims
- 1237US2009213659A1Flash memory device and flash memory system including the sameLEE KYEONG-HAN·Filed 2009·Application pending·0 cites
- 1336US8203890B2Data output buffer whose mode switches according to operation frequency and semiconductor memory device having the sameLEE KYEONG-HAN·Filed 2009·Granted Jun 19, 2012·0 cites·25 claims
- 1431US2017160911A1Method for controlling user interface related to object and electronic device for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 1526US2005248991A1Non-volatile memory device and programming method thereofLEE KYEONG-HAN·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →