Inventor · disambiguated record
Kyung-Chang Ryoo
Also filed as: RYOO KYUNG-CHANG
20 granted patents·7 pending applications·226 citations·filing 2004–2025
94Inventor score
Top patents by PatentIndex Score
27 records- 0195US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0294US7214957B2PRAMS having phase-change layer pattern with electrode contact area and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 8, 2007·28 cites·13 claims
- 0391US7453111B2Phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 18, 2008·35 cites·13 claims
- 0487US9710747B2Neuromophic system and configuration method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 18, 2017·32 cites·16 claims
- 0587US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 0686US7419881B2Phase changeable memory device and method of formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·16 cites·20 claims
- 0784US7696508B2Phase change memory devices having dual lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·13 cites·17 claims
- 0881US8384060B2Resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 26, 2013·7 cites·16 claims
- 0979US9230642B2Variable resistance memory device and a variable resistance memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·8 cites·20 claims
- 1076US7411208B2Phase-change memory device having a barrier layer and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 12, 2008·20 cites·44 claims
- 1168US8472237B2Semiconductor devices and methods of driving the sameOH JEONG-HOON·Filed 2010·Granted Jun 25, 2013·5 cites·21 claims
- 1268US7977662B2Phase-changeable memory devices having reduced susceptibility to thermal interferenceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·10 cites·7 claims
- 1367US2025383807A1Computing system generating map data, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1462US12423011B2Computing system generating map data, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 1558US12164802B2System and method of host and storage device path selection by memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1655US7932102B2Phase change memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·0 cites·16 claims
- 1755US2025068355A1System and method of host and storage device path selection by memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1851US8164079B2Phase change memorySONG YOON-JONG·Filed 2011·Granted Apr 24, 2012·0 cites·10 claims
- 1951US2012175580A1Variable resistance memorySONG YOON-JONG·Filed 2012·Application pending·0 cites
- 2050US10049717B2Wear leveling for storage or memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 14, 2018·0 cites·14 claims
- 2150US8129214B2Phase change memory devices having dual lower electrodes and methods of fabricating the sameSONG YOON-JONG·Filed 2010·Granted Mar 6, 2012·1 cites·11 claims
- 2250US8043924B2Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·0 cites·6 claims
- 2349US2010072453A1Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells ThereinJEONG HONG-SIK·Filed 2009·Application pending·0 cites
- 2446US2007272950A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2541US2006228853A1Memory devices including spacers on sidewalls of memory storage elements and related methodsJEONG WON-CHEOL·Filed 2006·Application pending·0 cites
- 2640US10629262B2Method of operating resistive memory device capable of reducing write latencySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 2737US2009230378A1Resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →