Inventor · disambiguated record
Kyu-Ha Shim
Also filed as: SHIM KYU-HA
18 granted patents·10 pending applications·18 citations·filing 2006–2025
89Inventor score
Files withAPPLIED MATERIALS INC17VARIAN SEMICONDUCTOR EQUIPMENT ASS INC5VARIAN SEMICONDUCTOR EQUIPMENT3NUNAN PETER1RAMAPPA DEEPAK1
Top patents by PatentIndex Score
28 records- 0178US10332748B2Etch rate modulation through ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 25, 2019·2 cites·10 claims
- 0278US7993698B2Techniques for temperature controlled ion implantationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2006·Granted Aug 9, 2011·5 cites·8 claims
- 0376US9934982B2Etch rate modulation through ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Apr 3, 2018·2 cites·20 claims
- 0473US2025037989A1Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0572US2024404823A1Plasma treatment process to densify oxide layersAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0670US10811257B2Techniques for forming low stress etch-resistant mask using implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Oct 20, 2020·1 cites·16 claims
- 0769US12142475B2Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2022·Granted Nov 12, 2024·0 cites·19 claims
- 0869US10354875B1Techniques for improved removal of sacrificial maskVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jul 16, 2019·1 cites·18 claims
- 0968US8716155B2Method to enhance charge trappingRAMAPPA DEEPAK A·Filed 2012·Granted May 6, 2014·2 cites·13 claims
- 1067US10204909B2Non-uniform gate oxide thickness for DRAM deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Feb 12, 2019·1 cites·14 claims
- 1167US8012843B2Optimized halo or pocket cold implantsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2010·Granted Sep 6, 2011·2 cites·19 claims
- 1265US8283265B2Method to enhance charge trappingRAMAPPA DEEPAK·Filed 2009·Granted Oct 9, 2012·2 cites·10 claims
- 1361US12457731B2Bottom contact formation for 4F2 vertical DRAMAPPLIED MATERIALS INC·Filed 2022·Granted Oct 28, 2025·0 cites·17 claims
- 1461US12094709B2Plasma treatment process to densify oxide layersAPPLIED MATERIALS INC·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 1558US2025194072A1Implant for transistor bitline contact and junction formationAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1657US12444615B2Forming a doped hardmaskAPPLIED MATERIALS INC·Filed 2022·Granted Oct 14, 2025·0 cites·13 claims
- 1757US2024404887A1High-temperature implant for gate-all-around devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1857US2025140566A1Selectivity of boron hard masks using ion implantAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1954US2024332009A1Ion implantation for reduced roughness of silicon nitrideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2053US11594441B2Handling for high resistivity substratesAPPLIED MATERIALS INC·Filed 2021·Granted Feb 28, 2023·0 cites·16 claims
- 2152US11664419B2Isolation method to enable continuous channel layerAPPLIED MATERIALS INC·Filed 2020·Granted May 30, 2023·0 cites·11 claims
- 2252US10930508B2Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implantAPPLIED MATERIALS INC·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 2351US11728383B2Localized stressor formation by ion implantationAPPLIED MATERIALS INC·Filed 2020·Granted Aug 15, 2023·0 cites·10 claims
- 2449US11114299B2Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterningAPPLIED MATERIALS INC·Filed 2019·Granted Sep 7, 2021·0 cites·19 claims
- 2546US2025226211A1Increased etch resistance of nitride layers using chemical vapor deposition and hot ion implantationAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2646US2025226226A1Stress modulation of nitride layers using chemical vapor deposition and hot ion implantationAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2735US2011034014A1Cold implant for optimized silicide formationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2010·Application pending·0 cites
- 2833US2006258128A1Methods and apparatus for enabling multiple process steps on a single substrateNUNAN PETER·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →