Inventor · disambiguated record
Lai-Juh Chen
Also filed as: CHEN LAI-JUH
20 granted patents·1 pending application·1,334 citations·filing 1994–2004
97Inventor score
Files withIND TECH RES INST21
Top patents by PatentIndex Score
21 records- 0196US5643050AChemical/mechanical polish (CMP) thickness monitorIND TECH RES INST·Filed 1996·Granted Jul 1, 1997·179 cites·29 claims
- 0295US5823854AChemical-mechanical polish (CMP) pad conditionerIND TECH RES INST·Filed 1996·Granted Oct 20, 1998·140 cites·8 claims
- 0392US5858869AMethod for fabricating intermetal dielectric insulation using anisotropic plasma oxides and low dielectric constant polymersIND TECH RES INST·Filed 1997·Granted Jan 12, 1999·152 cites·20 claims
- 0490US5873769ATemperature compensated chemical mechanical polishing to achieve uniform removal ratesIND TECH RES INST·Filed 1997·Granted Feb 23, 1999·120 cites·17 claims
- 0590US5637031AElectrochemical simulator for chemical-mechanical polishing (CMP)IND TECH RES INST·Filed 1996·Granted Jun 10, 1997·97 cites·27 claims
- 0689US5723387AMethod and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substratesIND TECH RES INST·Filed 1996·Granted Mar 3, 1998·113 cites·19 claims
- 0789US5647952AChemical/mechanical polish (CMP) endpoint methodIND TECH RES INST·Filed 1996·Granted Jul 15, 1997·103 cites·28 claims
- 0887US5985093AChemical-mechanical polish (CMP) pad conditionerIND TECH RES INST·Filed 1998·Granted Nov 16, 1999·69 cites·9 claims
- 0982US5872043AMethod of planarizing wafers with shallow trench isolationIND TECH RES INST·Filed 1996·Granted Feb 16, 1999·73 cites·15 claims
- 1076US5976979ASequential oxygen plasma treatment and chemical mechanical polish (CMP) planarizing method for forming planarized low dielectric constant dielectric layerIND TECH RES INST·Filed 1997·Granted Nov 2, 1999·50 cites·17 claims
- 1165US5453406AAspect ratio independent coating for semiconductor planarization using SOGIND TECH RES INST·Filed 1994·Granted Sep 26, 1995·39 cites·21 claims
- 1263US5489553AHF vapor surface treatment for the 03 teos gap filling depositionIND TECH RES INST·Filed 1995·Granted Feb 6, 1996·30 cites·14 claims
- 1362US5681425ATeos plasma protection technologyIND TECH RES INST·Filed 1995·Granted Oct 28, 1997·28 cites·32 claims
- 1462US5461010ATwo step etch back spin-on-glass process for semiconductor planarizationIND TECH RES INST·Filed 1994·Granted Oct 24, 1995·34 cites·19 claims
- 1558US5635425AIn-situ N2 plasma treatment for PE TEOS oxide depositionIND TECH RES INST·Filed 1995·Granted Jun 3, 1997·23 cites·30 claims
- 1657US5834375AChemical-mechanical polishing planarization monitorIND TECH RES INST·Filed 1996·Granted Nov 10, 1998·23 cites·4 claims
- 1752US6281115B1Sidewall protection for a via hole formed in a photosensitive, low dielectric constant layerIND TECH RES INST·Filed 1998·Granted Aug 28, 2001·18 cites·18 claims
- 1852US5834377AIn situ method for CMP endpoint detectionIND TECH RES INST·Filed 1997·Granted Nov 10, 1998·16 cites·16 claims
- 1948US6242361B1Plasma treatment to improve DUV photoresist processIND TECH RES INST·Filed 1999·Granted Jun 5, 2001·14 cites·19 claims
- 2047US6251806B1Method to improve the roughness of metal deposition on low-k materialIND TECH RES INST·Filed 1999·Granted Jun 26, 2001·13 cites·36 claims
- 2139US2005118839A1Chemical mechanical polish process control method using thermal imaging of polishing padIND TECH RES INST·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →