Inventor · disambiguated record
Laurent Clavelier
Also filed as: CLAVELIER LAURENT
29 granted patents·3 pending applications·655 citations·filing 2003–2013
96Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE13DEGUET CHRYSTEL4ARENA CHANTAL2CLAVELIER LAURENT2FOURNEL FRANCK2
Top patents by PatentIndex Score
32 records- 0196US8853785B2Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuitAUGENDRE EMMANUEL·Filed 2010·Granted Oct 7, 2014·182 cites·10 claims
- 0296US7598145B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 6, 2009·53 cites·8 claims
- 0395US8890111B2Method for manufacturing a very-high-resolution screen using a nanowire-based emitting anisotropic conductive filmTEMPLIER FRANCOIS·Filed 2010·Granted Nov 18, 2014·37 cites·12 claims
- 0495US8183630B2Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VTBATUDE PERRINE·Filed 2009·Granted May 22, 2012·261 cites·19 claims
- 0591US9106199B2Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making sameDEGUET CHRYSTEL·Filed 2010·Granted Aug 11, 2015·18 cites·24 claims
- 0684US7906439B2Method of fabricating a MEMS/NEMS electromechanical componentCOMMISSARIT A L EN ATOMIQUE·Filed 2009·Granted Mar 15, 2011·19 cites·16 claims
- 0783US8178427B2Epitaxial methods for reducing surface dislocation density in semiconductor materialsARENA CHANTAL·Filed 2010·Granted May 15, 2012·5 cites·20 claims
- 0880US7608491B2Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areasCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 27, 2009·7 cites·9 claims
- 0978US8288250B2Method for transferring chips onto a substrateCLAVELIER LAURENT·Filed 2009·Granted Oct 16, 2012·11 cites·20 claims
- 1078US8142593B2Method of transferring a thin film onto a supportDEGUET CHRYSTEL·Filed 2006·Granted Mar 27, 2012·10 cites·12 claims
- 1178US7993949B2Heterogeneous substrate including a sacrificial layer, and a method of fabricating itCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted Aug 9, 2011·6 cites·11 claims
- 1276US8445122B2Data storage medium and associated methodDEGUET CHRYSTEL·Filed 2008·Granted May 21, 2013·3 cites·15 claims
- 1375US8766433B2Electronic chip having channels through which a heat transport coolant can flow, electronic components and communication arm incorporating said chipAVENAS YVAN·Filed 2011·Granted Jul 1, 2014·8 cites·17 claims
- 1473US8664084B2Method for making a thin-film elementDEGUET CHRYSTEL·Filed 2006·Granted Mar 4, 2014·4 cites·16 claims
- 1573US7759175B2Fabrication method of a mixed substrate and use of the substrate for producing circuitsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jul 20, 2010·4 cites·12 claims
- 1672US8318555B2Method of producing a hybrid substrate having a continuous buried electrically insulating layerSIGNAMARCHEIX THOMAS·Filed 2009·Granted Nov 27, 2012·6 cites·13 claims
- 1770US7972971B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 5, 2011·3 cites·20 claims
- 1870US7678635B2Method of producing a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Mar 16, 2010·4 cites·14 claims
- 1969US8501589B2Method in the microelectronics fields of forming a monocrystalline layerFOURNEL FRANCK·Filed 2009·Granted Aug 6, 2013·3 cites·15 claims
- 2068US7732282B2Transistor of the I-MOS type comprising two independent gates and method of using such a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 8, 2010·4 cites·7 claims
- 2160US7763915B2Three-dimensional integrated C-MOS circuit and method for producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 27, 2010·2 cites·18 claims
- 2257US8841202B2Method of producing a hybrid substrate by partial recrystallization of a mixed layerFOURNEL FRANCK·Filed 2010·Granted Sep 23, 2014·1 cites·15 claims
- 2357US7989327B2Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched stepCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Aug 2, 2011·1 cites·13 claims
- 2457US7625811B2Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structuresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Dec 1, 2009·1 cites·14 claims
- 2556US8866225B2Field effect transistor with alternate electrical contactsMAYER FREDERIC·Filed 2008·Granted Oct 21, 2014·1 cites·14 claims
- 2650US2009321887A1Method of fabricating an electromechanical structure including at least one mechanical reinforcing pillarCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Application pending·0 cites
- 2749US10290721B2Method of fabricating an electromechanical structure including at least one mechanical reinforcing pillarCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted May 14, 2019·0 cites·9 claims
- 2849US2012187541A1Epitaxial methods for reducing surface dislocation density in semiconductor materialsARENA CHANTAL·Filed 2012·Application pending·0 cites
- 2948US8809964B2Method of adjusting the threshold voltage of a transistor by a buried trapping layerANDRIEU FRANÇOIS·Filed 2009·Granted Aug 19, 2014·1 cites·20 claims
- 3047US8076169B2Method of fabricating an electromechanical device including at least one active elementPERRUCHOT FRANCOIS·Filed 2009·Granted Dec 13, 2011·0 cites·14 claims
- 3147US7648893B2Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronicsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jan 19, 2010·0 cites·7 claims
- 3233US2005242367A1Thin-film electronic device, in particular power device, and method for making sameCLAVELIER LAURENT·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →