Inventor · disambiguated record
Laertis Economikos
Also filed as: ECONOMIKOS LAERTIS
108 granted patents·21 pending applications·2,116 citations·filing 1992–2022
99Inventor score
Files withIBM63GLOBALFOUNDRIES INC45INFINEON TECHNOLOGIES AG4ZHANG JOHN H4INFINEON TECHNOLOGIES CORP3
Top patents by PatentIndex Score
129 records- 0199US6030881AHigh throughput chemical vapor deposition process capable of filling high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 1998·Granted Feb 29, 2000·575 cites·34 claims
- 0298US10236213B1Gate cut structure with liner spacer and related methodGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·25 cites·9 claims
- 0398US6335261B1Directional CVD process with optimized etchbackIBM·Filed 2000·Granted Jan 1, 2002·214 cites·20 claims
- 0496US10388747B1Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structureGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·21 cites·20 claims
- 0596US10373877B1Methods of forming source/drain contact structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·18 cites·20 claims
- 0696US6319794B1Structure and method for producing low leakage isolation devicesIBM·Filed 1998·Granted Nov 20, 2001·258 cites·19 claims
- 0795US10475791B1Transistor fins with different thickness gate dielectricGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·12 cites·13 claims
- 0895US10373873B1Gate cut in replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·13 cites·15 claims
- 0995US10177041B2Fin-type field effect transistors (FINFETS) with replacement metal gates and methodsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·11 cites·19 claims
- 1094US10199271B1Self-aligned metal wire on contact structure and method for forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 5, 2019·10 cites·8 claims
- 1194US10090402B1Methods of forming field effect transistors (FETS) with gate cut isolation regions between replacement metal gatesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·16 cites·13 claims
- 1293US10566201B1Gate cut method after source/drain metallizationGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 18, 2020·6 cites·17 claims
- 1393US10388652B2Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 20, 2019·10 cites·14 claims
- 1493US10373875B1Contacts formed with self-aligned cutsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·7 cites·9 claims
- 1592US10418285B1Fin field-effect transistor (FinFET) and method of production thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·8 cites·16 claims
- 1691US10586860B2Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·6 cites·10 claims
- 1791US10573753B1Oxide spacer in a contact over active gate finFET and method of production thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 25, 2020·6 cites·16 claims
- 1890US6869860B2Filling high aspect ratio isolation structures with polysilazane based materialIBM·Filed 2003·Granted Mar 22, 2005·35 cites·10 claims
- 1988US10699957B2Late gate cut using selective dielectric depositionGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 30, 2020·4 cites·20 claims
- 2088US10504798B2Gate cut in replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 10, 2019·5 cites·5 claims
- 2188US10056469B1Gate cut integration and related deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 21, 2018·7 cites·12 claims
- 2287US10276391B1Self-aligned gate caps with an inverted profileGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 30, 2019·4 cites·20 claims
- 2387US6359300B1High aspect ratio deep trench capacitor having void-free fillIBM·Filed 2000·Granted Mar 19, 2002·37 cites·9 claims
- 2487US6136664AFilling of high aspect ratio trench isolationIBM·Filed 1997·Granted Oct 24, 2000·88 cites·24 claims
- 2586US6180480B1Germanium or silicon-germanium deep trench fill by melt-flow processIBM·Filed 1998·Granted Jan 30, 2001·55 cites·15 claims
- 2685US10790363B2IC structure with metal cap on cobalt layer and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 29, 2020·3 cites·19 claims
- 2784US10522410B2Performing concurrent diffusion break, gate and source/drain contact cut etch processesGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·4 cites·20 claims
- 2884US8324622B2Method of repairing probe padsZHANG JOHN H·Filed 2009·Granted Dec 4, 2012·9 cites·12 claims
- 2983US6485355B1Method to increase removal rate of oxide using fixed-abrasiveIBM·Filed 2001·Granted Nov 26, 2002·31 cites·33 claims
- 3081US8822994B2Method of repairing probe padsZHANG JOHN H·Filed 2012·Granted Sep 2, 2014·4 cites·15 claims
- 3180US10553698B2Methods, apparatus and system for a self-aligned gate cut on a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 4, 2020·2 cites·12 claims
- 3280US6569769B1Slurry-less chemical-mechanical polishingIBM·Filed 2000·Granted May 27, 2003·22 cites·22 claims
- 3380US6003418APunched slug removal systemIBM·Filed 1997·Granted Dec 21, 1999·35 cites·14 claims
- 3479US10937786B2Gate cut structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 2, 2021·2 cites·20 claims
- 3579US6218236B1Method of forming a buried bitline in a vertical DRAM deviceIBM·Filed 1999·Granted Apr 17, 2001·36 cites·14 claims
- 3676US10879073B2Insulating gate separation structure for transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 3776US9607864B2Dual medium filter for ion and particle filtering during semiconductor processingZHANG JOHN H·Filed 2012·Granted Mar 28, 2017·3 cites·18 claims
- 3876US8143166B2Polishing method with inert gas injectionZHAO FENG·Filed 2008·Granted Mar 27, 2012·5 cites·23 claims
- 3975US6177696B1Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devicesIBM·Filed 1998·Granted Jan 23, 2001·44 cites·33 claims
- 4074US8792080B2Method and system to predict lithography focus error using simulated or measured topographySAPP BRIAN CHRISTOPHER·Filed 2011·Granted Jul 29, 2014·2 cites·11 claims
- 4173US12417944B2Formation of trench silicide source or drain contacts without gate damageIBM·Filed 2022·Granted Sep 16, 2025·0 cites·4 claims
- 4273US9058976B2Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereofIBM·Filed 2012·Granted Jun 16, 2015·2 cites·6 claims
- 4372US10707206B2Gate cut isolation formed as layer against sidewall of dummy gate mandrelGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 7, 2020·1 cites·17 claims
- 4472US10510749B1Resistor within single diffusion break, and related methodGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·1 cites·12 claims
- 4572US6794242B1Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contactsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 21, 2004·12 cites·14 claims
- 4671US10109505B2Dual medium filter for ion and particle filtering during semiconductor processingIBM·Filed 2017·Granted Oct 23, 2018·1 cites·8 claims
- 4770US10580685B2Integrated single diffusion breakGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·1 cites·9 claims
- 4870US10157796B1Forming of marking trenches in structure for multiple patterning lithographyGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 4968US10522538B1Using source/drain contact cap during gate cutGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·1 cites·19 claims
- 5068US6596580B2Recess Pt structure for high k stacked capacitor in DRAM and FRAM, and the method to form this structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 22, 2003·12 cites·7 claims
Showing the top 50 of 129 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →