Inventor · disambiguated record
Lars Knoll
Also filed as: KNOLL LARS
16 granted patents·18 pending applications·5 citations·filing 2013–2025
85Inventor score
Files withHITACHI ENERGY LTD19ABB SCHWEIZ AG8HITACHI ENERGY SWITZERLAND AG5ABB POWER GRIDS SWITZERLAND AG1FORSCHUNGSZENTRUM JUELICH GMBH1
Top patents by PatentIndex Score
34 records- 0177US2025359140A1Power semiconductor device and method for producing a power semiconductor deviceHITACHI ENERGY LTD·Filed 2025·Application pending·0 cites
- 0270US11031473B2Silicon carbide superjunction power semiconductor device and method for manufacturing the sameABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 0369US10361082B2Semiconductor device and method for manufacturing such a semiconductor deviceABB SCHWEIZ AG·Filed 2018·Granted Jul 23, 2019·1 cites·20 claims
- 0466US10516022B2Method for manufacturing a semiconductor deviceABB SCHWEIZ AG·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 0565US10164126B2Junction barrier schottky diode with enhanced surge current capabilityABB SCHWEIZ AG·Filed 2018·Granted Dec 25, 2018·1 cites·20 claims
- 0664US10490658B2Power semiconductor deviceABB SCHWEIZ AG·Filed 2018·Granted Nov 26, 2019·1 cites·20 claims
- 0760US2025275176A1Power semiconductor device and method for producing a power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 0853US2025372375A1Manufacturing method for a power semiconductor device and power semiconductor deviceHITACHI ENERGY LTD·Filed 2023·Application pending·0 cites
- 0951US12426343B2Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereofHITACHI ENERGY LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 1051US2023411514A1Power semiconductor deviceHITACHI ENERGY SWITZERLAND AG·Filed 2023·Application pending·0 cites
- 1150US12513978B2Manufacturing method for a power semiconductor device and power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Granted Dec 30, 2025·0 cites·14 claims
- 1250US2025359142A1Method for producing a semiconductor device and semiconductor deviceHITACHI ENERGY LTD·Filed 2023·Application pending·0 cites
- 1349US12113131B2Strain enhanced SiC power semiconductor device and method of manufacturingHITACHI ENERGY LTD·Filed 2020·Granted Oct 8, 2024·0 cites·20 claims
- 1449US11967616B2Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the sameHITACHI ENERGY LTD·Filed 2019·Granted Apr 23, 2024·0 cites·20 claims
- 1549US10553437B2Semiconductor device and method for manufacturing such a semiconductor deviceABB SCHWEIZ AG·Filed 2018·Granted Feb 4, 2020·0 cites·11 claims
- 1649US2024170566A1Power semiconductor device and method for producing a power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 1748US2024222462A1Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 1847US12501668B2Power semiconductor device and a method for producing a power semiconductor deviceHITACHI ENERGY LTD·Filed 2021·Granted Dec 16, 2025·0 cites·10 claims
- 1947US12062698B2Silicon carbide transistor deviceHITACHI ENERGY LTD·Filed 2020·Granted Aug 13, 2024·0 cites·20 claims
- 2047US2025006785A1Power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 2146US12501666B2Power semiconductor device with an insulated trench gate electrodeHITACHI ENERGY LTD·Filed 2021·Granted Dec 16, 2025·0 cites·12 claims
- 2246US2024055495A1Power semiconductor device and method for manufacturing a power semiconductor deviceHITACHI ENERGY SWITZERLAND AG·Filed 2021·Application pending·0 cites
- 2345US12230675B2Planar SiC MOSFET with retrograde implanted channelHITACHI ENERGY LTD·Filed 2020·Granted Feb 18, 2025·0 cites·13 claims
- 2445US2024021542A1Power semiconductor device and power moduleHITACHI ENERGY SWITZERLAND AG·Filed 2020·Application pending·0 cites
- 2545US2024413207A1Silicon carbide semiconductor device and manufacturing methodHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 2645US2024339322A1Semiconductor device having a reduced concentration of carbon vacancies and its manufacturing methodHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 2745US2024186377A1Power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 2845US2024079454A1Silicon carbide power device and method for manufacturing the sameHITACHI ENERGY SWITZERLAND AG·Filed 2021·Application pending·0 cites
- 2944US2021043735A1Short channel trench power mosfet and methodABB SCHWEIZ AG·Filed 2020·Application pending·0 cites
- 3041US2019363166A1Short channel trench power mosfetABB SCHWEIZ AG·Filed 2018·Application pending·0 cites
- 3139US2015024586A1Method for producing a monocrystalline metal/semiconductor compoundFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2013·Application pending·0 cites
- 3238US2019035928A1Short channel trench power mosfetABB SCHWEIZ AG·Filed 2018·Application pending·0 cites
- 3337US11302811B2Silicon carbide power device with MOS structure and stressorHITACHI ENERGY SWITZERLAND AG·Filed 2019·Granted Apr 12, 2022·0 cites·18 claims
- 3436US11888037B2Self-aligned field plate mesa FPM SiC schottky barrier diodeHITACHI ENERGY LTD·Filed 2019·Granted Jan 30, 2024·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →