Inventor · disambiguated record
Larry Wang
Also filed as: WANG LARRY · WANG LARRY Y · WANG LARRY YU
43 granted patents·1,100 citations·filing 1994–2024
98Inventor score
Files withADVANCED MICRO DEVICES INC33SYNOPSYS INC5MAXIM INTEGRATED PRODUCTS3HE YI1SAMOILOV ARKADII V1
Top patents by PatentIndex Score
43 records- 0193US12082403B1One time programmable bitcell with select device in isolated wellSYNOPSYS INC·Filed 2022·Granted Sep 3, 2024·3 cites·20 claims
- 0290US6037671AStepper alignment mark structure for maintaining alignment integrityADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 14, 2000·107 cites·21 claims
- 0386US5893744AMethod of forming a zero layer mark for alignment in integrated circuit manufacturing process employing shallow trench isolationADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 13, 1999·84 cites·3 claims
- 0485US5930645AShallow trench isolation formation with reduced polish stop thicknessADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·87 cites·17 claims
- 0584US6239031B1Stepper alignment mark structure for maintaining alignment integrityADVANCED MICRO DEVICES INC·Filed 2000·Granted May 29, 2001·39 cites·3 claims
- 0683US6087243AMethod of forming trench isolation with high integrity, ultra thin gate oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 11, 2000·71 cites·17 claims
- 0782US6171962B1Shallow trench isolation formation without planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 9, 2001·68 cites·11 claims
- 0881US6383906B1Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumptionADVANCED MICRO DEVICES INC·Filed 2000·Granted May 7, 2002·29 cites·11 claims
- 0979US6100145ASilicidation with silicon buffer layer and silicon spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·47 cites·16 claims
- 1077US10163520B1OTP cell with improved programmabilitySYNOPSYS INC·Filed 2017·Granted Dec 25, 2018·3 cites·19 claims
- 1177US5926723AGeneration of a loose planarization mask having relaxed boundary conditions for use in shallow trench isolation processesADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·48 cites·19 claims
- 1275US5963816AMethod for making shallow trench marksADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·47 cites·10 claims
- 1374US6150243AShallow junction formation by out-diffusion from a doped dielectric layer through a salicide layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·46 cites·19 claims
- 1473US10623192B2Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) securitySYNOPSYS INC·Filed 2017·Granted Apr 14, 2020·4 cites·10 claims
- 1573US8748232B2Semiconductor device having a through-substrate viaSAMOILOV ARKADII V·Filed 2012·Granted Jun 10, 2014·3 cites·14 claims
- 1671US6232635B1Method to fabricate a high coupling flash cell with less silicide seam problemADVANCED MICRO DEVICES INC·Filed 2000·Granted May 15, 2001·12 cites·6 claims
- 1771US6143624AShallow trench isolation formation with spacer-assisted ion implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·42 cites·24 claims
- 1870US6323516B1Flash memory device and fabrication method having a high coupling ratioADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 27, 2001·29 cites·9 claims
- 1968US6074927AShallow trench isolation formation with trench wall spacerADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·37 cites·17 claims
- 2067US10032522B2Three-transistor OTP memory cellSYNOPSYS INC·Filed 2017·Granted Jul 24, 2018·1 cites·12 claims
- 2166US8630137B1Dynamic trim method for non-volatile memory productsHE YI·Filed 2011·Granted Jan 14, 2014·3 cites·11 claims
- 2266US6238986B1Formation of junctions by diffusion from a doped film at silicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted May 29, 2001·33 cites·22 claims
- 2364US12446215B2One-time programmable bitcell with a thermally enhanced ruptureSYNOPSYS INC·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 2464US6599810B1Shallow trench isolation formation with ion implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 29, 2003·29 cites·21 claims
- 2562US6096599AFormation of junctions by diffusion from a doped film into and through a silicide during silicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·27 cites·23 claims
- 2659US6380047B1Shallow trench isolation formation with two source/drain masks and simplified planarization maskADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·9 cites·17 claims
- 2759US6124183AShallow trench isolation formation with simplified reverse planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·25 cites·13 claims
- 2858US5485097AMethod of electrically measuring a thin oxide thickness by tunnel voltageADVANCED MICRO DEVICES INC·Filed 1994·Granted Jan 16, 1996·28 cites·6 claims
- 2957US6162689AMulti-depth junction formation tailored to silicide formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 19, 2000·22 cites·19 claims
- 3057US6130467AShallow trench isolation with spacers for improved gate oxide qualityADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 10, 2000·23 cites·2 claims
- 3156US6530997B1Use of gaseous silicon hydrides as a reducing agent to remove re-sputtered silicon oxideADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 11, 2003·2 cites·20 claims
- 3254US9224714B2Semiconductor device having a through-substrate viaMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Dec 29, 2015·0 cites·6 claims
- 3353US5970363AShallow trench isolation formation with improved trench edge oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·19 cites·30 claims
- 3451US6380040B1Prevention of dopant out-diffusion during silicidation and junction formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·5 cites·20 claims
- 3551US5970362ASimplified shallow trench isolation formation with no polish stopADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·17 cites·14 claims
- 3650US6169005B1Formation of junctions by diffusion from a doped amorphous silicon film during silicidationADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 2, 2001·16 cites·22 claims
- 3749US6962842B1Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJTMAXIM INTEGRATED PRODUCTS·Filed 2003·Granted Nov 8, 2005·5 cites·11 claims
- 3848US5904543AMethod for formation of offset trench isolation by the use of disposable spacer and trench oxidationADVANCED MICRO DEVICES INC·Filed 1996·Granted May 18, 1999·15 cites·8 claims
- 3946US9129710B1Dynamic trim method for non volatile memory productsMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Sep 8, 2015·0 cites·25 claims
- 4033US6090712AShallow trench isolation formation with no polish stopADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 18, 2000·6 cites·12 claims
- 4132US6265273B1Method of forming rectangular shaped spacersADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·2 cites·20 claims
- 4232US6162699AMethod for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its peripheryADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 19, 2000·2 cites·16 claims
- 4332US6090713AShallow trench isolation formation with simplified reverse planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 18, 2000·5 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →