Inventor · disambiguated record
Leonard J. Olmer
Also filed as: OLMER LEONARD J · OLMER LEONARD JAY
12 granted patents·2 pending applications·1,444 citations·filing 1983–2005
93Inventor score
Files withLUCENT TECHNOLOGIES INC5AT & T BELL LAB3AT & T TECHNOLOGIES INC2AGERE SYSTEMS INC1APPLIED MATERIALS INC1
Top patents by PatentIndex Score
14 records- 0197US5089442ASilicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvdAT & T BELL LAB·Filed 1990·Granted Feb 18, 1992·373 cites·11 claims
- 0297US5013691AAnisotropic deposition of silicon dioxideAT & T BELL LAB·Filed 1989·Granted May 7, 1991·822 cites·16 claims
- 0383US6696362B2Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processesAPPLIED MATERIALS INC·Filed 2002·Granted Feb 24, 2004·32 cites·13 claims
- 0481US5643838ALow temperature deposition of silicon oxides for device fabricationLUCENT TECHNOLOGIES INC·Filed 1993·Granted Jul 1, 1997·76 cites·11 claims
- 0578US4675089ALow temperature deposition method for high quality aluminum oxide filmsAT & T TECHNOLOGIES INC·Filed 1985·Granted Jun 23, 1987·38 cites·11 claims
- 0677US6153543AHigh density plasma passivation layer and method of applicationLUCENT TECHNOLOGIES INC·Filed 1999·Granted Nov 28, 2000·60 cites·9 claims
- 0752US4489102ARadiation-stimulated deposition of aluminumAT & T TECHNOLOGIES INC·Filed 1983·Granted Dec 18, 1984·16 cites·8 claims
- 0846US5252520AIntegrated circuit interlevel dielectric wherein the first and second dielectric layers are formed with different densitiesAT & T BELL LAB·Filed 1991·Granted Oct 12, 1993·20 cites·6 claims
- 0942US7556048B2In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistorAGERE SYSTEMS INC·Filed 2003·Granted Jul 7, 2009·0 cites·28 claims
- 1037US5693561AMethod of integrated circuit fabrication including a step of depositing tungstenLUCENT TECHNOLOGIES INC·Filed 1996·Granted Dec 2, 1997·6 cites·6 claims
- 1134US2005191863A1Semiconductor device contamination reduction in a fluorinated oxide deposition processFiled 2005·Application pending·0 cites
- 1232US2004061722A1Passdown database and flow chartFiled 2002·Application pending·0 cites
- 1329US6218304B1Method of determining copper reduction endpoint in the fabrication of a semiconductor deviceLUCENT TECHNOLOGIES INC·Filed 1999·Granted Apr 17, 2001·0 cites·27 claims
- 1427US6156675AMethod for enhanced dielectric film uniformityLUCENT TECHNOLOGIES INC·Filed 1999·Granted Dec 5, 2000·1 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →