Inventor · disambiguated record
Lee Wang
Also filed as: WANG LEE · WANG LEE Z · WANG LEE ZHUNG
50 granted patents·7 pending applications·366 citations·filing 1997–2024
98Inventor score
Top patents by PatentIndex Score
57 records- 0193US5824584AMethod of making and accessing split gate memory deviceMOTOROLA INC·Filed 1997·Granted Oct 20, 1998·97 cites·14 claims
- 0291US8817546B2Complementary electrical erasable programmable read only memoryWANG LEE·Filed 2012·Granted Aug 26, 2014·15 cites·25 claims
- 0391US8716803B23-D single floating gate non-volatile memory deviceFLASHSILICON INC·Filed 2012·Granted May 6, 2014·14 cites·10 claims
- 0491US7729165B2Self-adaptive and self-calibrated multiple-level non-volatile memoriesFLASHSILICON INC·Filed 2007·Granted Jun 1, 2010·27 cites·11 claims
- 0590US7099192B2Nonvolatile flash memory and method of operating the sameYIELD MICROELECTRONICS CORP·Filed 2004·Granted Aug 29, 2006·81 cites·9 claims
- 0687US10431308B1Memory cell size reduction for scalable logic gate non-volatile memory arraysFLASHSILICON INC·Filed 2018·Granted Oct 1, 2019·8 cites·24 claims
- 0786US9754668B1Digital perceptronFLASHSILICON INC·Filed 2016·Granted Sep 5, 2017·8 cites·17 claims
- 0886US7733700B2Method and structures for highly efficient hot carrier injection programming for non-volatile memoriesFLASHSILICON INC·Filed 2007·Granted Jun 8, 2010·13 cites·38 claims
- 0985US8415721B2Field side sub-bitline nor flash array and method of fabricating the sameWANG LEE·Filed 2011·Granted Apr 9, 2013·7 cites·11 claims
- 1084US10147492B1MOSFET threshold voltage sensing scheme for non-volatile memoryFLASHSILICON INC·Filed 2017·Granted Dec 4, 2018·6 cites·15 claims
- 1184US9048137B2Scalable gate logic non-volatile memory cells and arraysWANG LEE·Filed 2012·Granted Jun 2, 2015·9 cites·17 claims
- 1281US9502113B2Configurable non-volatile content addressable memoryFLASHSILICON INC·Filed 2015·Granted Nov 22, 2016·5 cites·16 claims
- 1379US7400527B2Bit symbol recognition method and structure for multiple bit storage in non-volatile memoriesFLASHSILICON INC·Filed 2006·Granted Jul 15, 2008·10 cites·30 claims
- 1478US7859903B1Methods and structures for reading out non-volatile memory using NVM cells as a load elementFLASHSILICON INC·Filed 2008·Granted Dec 28, 2010·9 cites·30 claims
- 1577US7515465B1Structures and methods to store information representable by a multiple bit binary word in electrically erasable, programmable read-only memories (EEPROM)FLASHSILICON INC·Filed 2006·Granted Apr 7, 2009·10 cites·12 claims
- 1676US8988104B2Multiple-time configurable non-volatile look-up-tableFLASHSILICON INC·Filed 2013·Granted Mar 24, 2015·4 cites·13 claims
- 1775US9082490B2Ultra-low power programming method for N-channel semiconductor non-volatile memoryFLASHSILICON INC·Filed 2013·Granted Jul 14, 2015·5 cites·5 claims
- 1874US9685239B1Field sub-bitline nor flash arrayPEGASUS SEMICONDUCTOR (BEIJING) CO LTD·Filed 2016·Granted Jun 20, 2017·5 cites·17 claims
- 1973US9779814B2Non-volatile static random access memory devices and methods of operationsWANG LEE·Filed 2011·Granted Oct 3, 2017·5 cites·14 claims
- 2065US9214465B2Structures and operational methods of non-volatile dynamic random access memory devicesWANG LEE·Filed 2012·Granted Dec 15, 2015·1 cites·25 claims
- 2164US11825652B2Methods of erasing semiconductor non-volatile memoriesFLASHSILICON INC·Filed 2021·Granted Nov 21, 2023·0 cites·8 claims
- 2264US8415735B2Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the sameWANG LEE·Filed 2009·Granted Apr 9, 2013·2 cites·6 claims
- 2363US11354098B2Configurable non-volatile arithmetic memory operatorsSYNERGER INC·Filed 2019·Granted Jun 7, 2022·1 cites·27 claims
- 2463US7606069B2Bit-symbol recognition method and structure for multiple-bit storage in non-volatile memoriesFLASHSILICON INC·Filed 2008·Granted Oct 20, 2009·4 cites·30 claims
- 2562US8716138B2Method for fabricating a field side sub-bitline nor flash arrayFLASHSILICON INC·Filed 2013·Granted May 6, 2014·1 cites·18 claims
- 2662US7626868B1Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)FLASHSILICON INC·Filed 2007·Granted Dec 1, 2009·4 cites·26 claims
- 2762US2025386492A1Graded channel devices for nor flash cell array and method of fabricating the sameFLASHSILICON INC·Filed 2024·Application pending·0 cites
- 2861US8742729B2Rechargeable batteryWANG LEE Z·Filed 2011·Granted Jun 3, 2014·2 cites·16 claims
- 2960US9595330B2Configurable non-volatile content addressable memoryFLASHSILICON INC·Filed 2016·Granted Mar 14, 2017·1 cites·16 claims
- 3060US8879323B2Interconnection matrix using semiconductor non-volatile memoryFLASHSILICON INC·Filed 2012·Granted Nov 4, 2014·2 cites·23 claims
- 3158US12134484B2System and method for contextually-informed fault diagnostics using structural-temporal analysis of fault propagation graphsBOEING CO·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 3257US11201162B2Methods of erasing semiconductor non-volatile memoriesFLASHSILICON INC·Filed 2018·Granted Dec 14, 2021·0 cites·9 claims
- 3357US7995398B2Structures and methods for reading out non-volatile memoriesFLASHSILICON INC·Filed 2009·Granted Aug 9, 2011·3 cites·24 claims
- 3456US2025147724A1Binary floating-point in-memory multiplication deviceFLASHSILICON INC·Filed 2023·Application pending·0 cites
- 3555US11600320B2Perpectual digital perceptronFLASHSILICON INC·Filed 2019·Granted Mar 7, 2023·0 cites·17 claims
- 3655US8274828B2Structures and methods for reading out non-volatile memory using referencing cellsWANG LEE Z·Filed 2010·Granted Sep 25, 2012·3 cites·37 claims
- 3755US7983087B2Methods and structures for reading out non-volatile memory using NVM cells as a load elementFLASHSILICON INC·Filed 2010·Granted Jul 19, 2011·1 cites·10 claims
- 3855US2024428062A1Neuron metal oxide semiconductor devices and circuits fabricated with cmos logic process technologyFLASHSILICON INC·Filed 2023·Application pending·0 cites
- 3954US7660154B2Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)FLASHSILICON INC·Filed 2008·Granted Feb 9, 2010·2 cites·20 claims
- 4052US11662980B2In-memory arithmetic processorsFLASHSILICON INC·Filed 2019·Granted May 30, 2023·0 cites·18 claims
- 4151US11031079B1Dynamic digital perceptronFLASHSILICON INC·Filed 2019·Granted Jun 8, 2021·0 cites·21 claims
- 4251US2024296883A1Operation scheme for four transistor static random access memoryFLASHSILICON INC·Filed 2024·Application pending·0 cites
- 4350US8809147B2Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the sameFLASHSILICON INC·Filed 2013·Granted Aug 19, 2014·0 cites·8 claims
- 4448US11461074B2Multiple-digit binary in-memory multiplier devicesFLASHSILICON INC·Filed 2020·Granted Oct 4, 2022·0 cites·29 claims
- 4547US11200029B2Extendable multiple-digit base-2n in-memory adder deviceFLASHSILICON INC·Filed 2020·Granted Dec 14, 2021·0 cites·22 claims
- 4647US10148254B2Standby current reduction in digital circuitriesFLASHSILICON INC·Filed 2017·Granted Dec 4, 2018·0 cites·21 claims
- 4746US12020143B2Digital neuromorphic code processorFLASHSILICON INC·Filed 2018·Granted Jun 25, 2024·0 cites·15 claims
- 4845US9117518B2Non-volatile register and non-volatile shift registerFLASHSILICON INC·Filed 2012·Granted Aug 25, 2015·0 cites·17 claims
- 4941US12300324B2Super short channel nor flash cell array and programming method thereofFS SEMI SEMICONDUCTOR CORP LTD·Filed 2023·Granted May 13, 2025·0 cites·13 claims
- 5041US8031524B2Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM)FLASHSILICON INC·Filed 2009·Granted Oct 4, 2011·0 cites·21 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →